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Tobias Wernicke

Observed name: T. Wernicke
Institution: EV Group (Austria)
ORCID: 0000-0003-1727-3868
Observed ORCID: 0000-0003-1727-3868
OpenAlex ID: A5032444203
Achieving low-temperature wafer level bonding with Cu-Sn-In ternary at 150 °C
2022 · Obert Golim, Vesa Vuorinen, et al. · Scripta Materialia · 23
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0.5 μm Pitch Wafer-to-wafer Hybrid Bonding at Low Temperatures with SiCN Bond Layer
2024 · Kai Ma, Nikolaos Bekiaris, et al. · IEEE Electronic Components and Technology Conference (ECTC) · 14
Low-Temperature Wafer-Level Bonding with Cu-Sn-In Solid Liquid Interdiffusion for Microsystem Packaging
2024 · Obert Golim, Vesa Vuorinen, et al. · Microelectronic Engineering · 14
Demonstrating 170 °C Low-Temperature Cu–In–Sn Wafer-Level Solid Liquid Interdiffusion Bonding
2021 · Vesa Vuorinen, Glenn Ross, et al. · IEEE Transactions on Components Packaging and Manufacturing Technology · 9
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Study of Cu-Sn-In system for low temperature, wafer level solid liquid inter-diffusion bonding
2020 · Joseph Hotchkiss, Vesa Vuorinen, et al. · Electronic System-Integration Technology Conference (ESTC) · 8
Recent Developments in Low Temperature Wafer Level Metal Bonding for Heterogenous Integration
2023 · Tobias Wernicke, Bernhard Rebhan, et al. · ECS Transactions · 5
Review—Recent Developments in Low Temperature Wafer Level Metal Bonding for Heterogenous Integration
2024 · T. Wernicke, B. Rebhan, et al. · ECS Journal of Solid State Science and Technology · 4
Low temperature formation of CuIn 1−x Ga x Se 2 solar cell absorbers by all printed multiple species nanoparticulate Se + Cu–In + Cu–Ga precursors
2014 · Stefan A. Möckel, Tobias Wernicke, et al. · Thin Solid Films · 4
Low temperature bonding of diamond heat spreaders for advanced thermal management
2025 · Matthias Danner, Tobias Wernicke, et al. · Japanese Journal of Applied Physics · 3
Low Temperature Bonding of Diamond Heat Spreaders for Advanced Thermal Management
2024 · M. Danner, T. Wernicke, et al. · International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) · 2
Interfacial Engineering of SiC/Si Heterostructures via Surface-Activated Direct Bonding: Crystallographic Orientation Effects and Stress Mitigation Strategies
2026 · Xiao Qin, Jieqiong Zhang, et al. · ACS Applied Electronic Materials
Layer Transfer of Epitaxial Ru by Metal-Metal Bonding: Towards Single-Crystal Interconnects
2026 · Christoph Adelmann, François Chancerel, et al. · IEEE Electronic Components and Technology Conference (ECTC)
Xenon vs Argon Ion Activation for Room-Temperature Wafer Bonding of Si and SiC
2026 · P. Kerepesi, M. Danner, et al. · International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
ALD alumina (Al 2 O 3 )-enabled wafer-level anodic bonding of LTCC and SOI for MEMS integration
2026 · Fikret Yildiz, Dogu Kaan Bugra Ozyigit, et al. · Journal of Micromechanics and Microengineering
Die-to-Wafer Bonding for Heterogenous Integration
2024 · V. Dragoi, M. Pires, et al. · International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D)
Investigation on the use of Al-Ge eutectic bonding in the structure part of a multilayer stacked MEMS device
2024 · Jun Wang, Manuel Mannarino, et al. · IEEE Electronic Components and Technology Conference (ECTC)
Recent Developments in Low Temperature Wafer Level Metal Bonding for Heterogenous Integration
2023 · Tobias Wernicke, Bernhard Rebhan, et al. · ECS Meeting Abstracts
Works count: 17
Citation count: 86
H-index: 5
I10-index: 3
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