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Author

Ruben Schnitzler

Observed names: R. Schnitzler, Schnitzler, Ruben
Observed institution: University of Stuttgart
ORCID: 0000-0001-9217-120X
Observed ORCID: 0000-0001-9217-120X
OpenAlex ID: A5032525619
Determination of Hard- and Soft-Switching Losses for Wide Bandgap Power Transistors with Noninvasive and Fast Calorimetric Measurements
2021 · Julian Weimer, Dominik Koch, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 7
Thermal Impedance Calibration for Rapid and Noninvasive Calorimetric Soft-Switching Loss Characterization
2023 · Julian Weimer, Ruben Schnitzler, et al. · IEEE Transactions on Power Electronics · 6
Machine Learning Based Sensor Fusion for Junction Temperature Estimation
2024 · Kevin Muñoz Barón, Diego Kuderna Melgar, et al. · International Power Electronics and Motion Control Conference (EPE-PEMC) · 5
Parameter-Dependent Analysis of Gate Switching Instability in SiC MOSFETs
2025 · Ruben Schnitzler, Tobias Fink, et al. · 3
Fully Modular, Dynamic SiC and GaN Testbench with Automated Temperature and Gate-Voltage Characterization
2023 · Ruben Schnitzler, Dominik Koch, et al. · IEEE Design Methodologies Conference (DMC) · 2
Peak Voltage and Switching Slope Dependency of Gate Switching Instability in SiC MOSFET
2026 · Ruben Schnitzler, Tobias Fink, et al. · Key engineering materials · 1
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Comprehensive Impact Evaluation of Gate Switching Instability on Switching Losses in SiC MOSFETs
2026 · Ruben Schnitzler, Tobias Fink, et al. · IEEE Transactions on Electron Devices · 1
Unraveling the Drain-Voltage Dependency of Trapping Effect Dynamics in GaN-HEMTs
2025 · Mathias C. J. Weiser, David Miller, et al. · 1
Gate-Source-Dependent Soft- and Hard-Switching Losses of 1200V SiC MOSFETs Utilizing Heatsinkless Calorimetric Measurements Based on Optical Sensors
2024 · Ruben Schnitzler, Dominik Koch, et al. · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · 1
An integrated NMR field probe using rapid non-adiabatic field switch-off for (ultra) low field MRI
2026 · Pavel Povolni, Dominique Goerner, et al. · Communications Engineering
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Modeling SiC MOSFETs threshold voltage drift: Constant and varying gate voltage stress conditions
2026 · B.D.R. Bonkoungou, R. Schnitzler, et al. · Microelectronics Reliability
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Experimental Investigation of Gate-Switching Instability in SiC MOSFETs Under Mission-Profile-Related Non-Monotonic Stress
2026 · Ruben Schnitzler, Tobias Fink, et al. · IEEE Electron Device Letters
Temperature-Dependent Gate-Switching Instability Induced Degradation in SiC MOSFETs for Voltage- and Current-Source Drivers
2026 · Ruben Schnitzler, Tobias Fink, et al. · IEEE Transactions on Power Electronics
Machine Learning-Based Degradation State Prediction of SiC MOSFETS Aged by Static Power Cycling Tests
2025 · Tobias Fink, Tobias Schmalzried, et al.
A Modulation Scheme for Dynamic AC Power Cycling Based on the Opposition Method
2024 · Tobias Fink, Kevin Muñoz Barón, et al. · IEEE Energy Conversion Congress and Exposition (ECCE)
Optimized Design of Fast-Switching GaN-based Inverters Utilizing a Digital Prototype in a Standardized Realistic Test Cycle
2023 · Jeremy Nuzzo, Dominik Koch, et al. · IEEE Design Methodologies Conference (DMC)
Works count: 17
Citation count: 27
H-index: 3
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