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Yuri Tkachev
Observed names:
Tkachev, Yuri,
Y. Tkachev
Institutions:
Microchip Technology (United States),
Microchip Technology (Germany)
Observed institutions:
Microchip Technology (United States),
Microchip Technology (Germany)
ORCID:
0000-0002-3685-3625
Observed ORCID:
0000-0002-3685-3625
OpenAlex ID:
A5032541869
Floating-Gate Corner-Enhanced Poly-to-Poly Tunneling in Split-Gate Flash Memory Cells
2011
·
Yuri Tkachev
, Xian Liu
, et al.
·
IEEE Transactions on Electron Devices
·
51
Observations of single electron trapping/detrapping events in tunnel oxide of SuperFlash/spl trade/ memory cell
2005
·
Y. Tkachev
, Xian Liu
, et al.
·
IEEE Computational Systems Bioinformatics Conference (CSB)
·
20
A cost-efficient 28nm split-gate eFLASH memory featuring a HKMG hybrid bit cell and HV device
2018
·
R. Richter
, M. Trentzsch
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
15
Generation of single-and double-charge electron traps in tunnel oxide of flash memory cells under Fowler-Nordheim stress
2011
·
Yuri Tkachev
, Alexander Kotov
·
IEEE International Integrated Reliability Workshop final report
·
11
Detection of Single-Electron Transfer Events and Capacitance Measurements in Submicron Floating-Gate Memory Cells
2006
·
Yuri Tkachev
, Alexander Kotov
·
European Solid-State Device Research Conference
·
11
Scaling Split-Gate Flash Memory Technology for Advanced MCU and Emerging Applications
2019
·
N. Do
, J. Kim
, et al.
·
IEEE International Memory Workshop (IMW)
·
8
Extraction of floating-gate capacitive parameters in split-gate flash memory cells
2016
·
Yuri Tkachev
·
IEEE International Conference on Microelectronic Test Structures (ICMTS)
·
8
Performance and Reliability of 4 Mb eFLASH Memory Array Featuring 28 nm Split-Gate Cell with HKMG Select Transistor
2020
·
S. Jourba
, N. Bollon
, et al.
·
IEEE International Memory Workshop (IMW)
·
7
A Detailed Analysis of Hot-Electron Programming Efficiency in 40-nm Split-Gate Flash Memory Cells
2017
·
Yuri Tkachev
, Alexander Kotov
·
IEEE International Memory Workshop (IMW)
·
7
Field-induced generation of electron traps in the tunnel oxide of flash memory cells
2015
·
Yuri Tkachev
·
IEEE International Integrated Reliability Workshop final report
·
7
Analog Tuning of Floating-Gate Cells with Sub-Elementary Charge Accuracy for In-Memory Computing Applications
2023
·
Yuri Tkachev
, Steven Lemke
, et al.
·
IEEE International Memory Workshop (IMW)
·
5
Integration of Split-gate Flash Memory in 130nm BCD technology For Automotive Applications
2019
·
Xiaobo Ma
, Zin Tun Thant
, et al.
·
IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
·
5
Common-floating gate test structure for separation of cycling-induced degradation components in split-gate flash memory cells
2014
·
Nhan Do
, Yuri Tkachev
·
IEEE International Conference on Microelectronic Test Structures (ICMTS)
·
5
A new method for analysis of cycling-induced degradation components in split-gate flash memory cells
2013
·
Yuri Tkachev
, Alexander Kotov
·
IEEE International Integrated Reliability Workshop final report
·
5
Performance and Reliability of Technology Qualified 34 Mb Split-Gate eFLASH Macro in 28 nm HKMG
2024
·
Ralf Richter
, Stefan Dünkel
, et al.
·
IEEE International Memory Workshop (IMW)
·
4
Silicon dioxide degradation in strongly non-uniform electric field
2017
·
Yuri Tkachev
, James A. Walls
·
IEEE International Integrated Reliability Workshop final report
·
3
Single-trap analysis of hot-carrier-induced gate oxide degradation in Flash memory cells
2017
·
Yuri Tkachev
, Alexander Kotov
·
Microelectronic Engineering
·
3
A differential method for analysis of hot-electron degradation in floating-gate memory cells with a single-trap resolution
2014
·
Yuri Tkachev
, Jong-Won Yoo
·
IEEE International Integrated Reliability Workshop final report
·
3
Evaluation of ESF3 Split-Gate Cell Cycling Endurance for Eeprom Applications
2024
·
Steven Lemke
, Louisa Schneider
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
2
The Analysis of Erase Voltage Variability in 70-nm Split-Gate Flash Memory Arrays
2018
·
Yuri Tkachev
, Jong-Won Yoo
, et al.
·
IEEE International Memory Workshop (IMW)
·
2
Reliability and modeling: What to simulate and how?
2017
·
Rui Zhang
, Giovanni Verzellesi
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
2
The sources of erase voltage variability in split-gate flash memory cell arrays
2016
·
Yuri Tkachev
, James A. Walls
·
IEEE International Integrated Reliability Workshop final report
·
2
Demonstration of Fundamental Weight Accuracy Limits Using Bi-Directional Tuning of SuperFlash ESF3 Cells for Neuromorphic Computing
2026
·
Louisa Schneider
, Steven Lemke
, et al.
·
IEEE International Reliability Physics Symposium proceedings
Demonstration of Fundamental Weight Accuracy Limits using Bi-directional Tuning of SuperFlash ESF3 Cells for Neuromorphic Computing
2026
·
IEEE International Symposium on Reliability Physics 2026
, Do, Nhan
, et al.
·
Underline Science Inc.
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Works count:
24
Citation count:
186
H-index:
7
I10-index:
5
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