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R. W. Ryan

Observed names: R. Ryan, R. W. RYAN, R.W Ryan, R.W. Ryan, Robert W. Ryan
OpenAlex ID: A5034425096
Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament
1988 · R. J. Malik, R. N. Nottenberg, et al. · Applied Physics Letters · 144
High-gain, high-frequency AlGaAs/GaAs graded band-gap base bipolar transistors with a Be diffusion setback layer in the base
1985 · R. J. Malik, F. Capasso, et al. · Applied Physics Letters · 42
Doping limits of C, Be, and Si in GaAs grown by solid source molecular-beam epitaxy with a thermally cracked As2 source
1992 · R. J. Malik, J. Nagle, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 35
Submicron scaling of AlGaAs/GaAs self-aligned thin emitter heterojunction bipolar transistors (SATE-HBT) with current gain independent of emitter area
1989 · R.J. Malik, L.M. Lunardi, et al. · Electronics Letters · 28
Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's
1996 · E.F. Chor, R.J. Malik, et al. · IEEE Electron Device Letters · 27
Ka-band monolithic InGaAs/InP HBT VCO's in CPW structure
1995 · J. Lin, Y.K. Chen, et al. · IEEE Microwave and Guided Wave Letters · 25
Temperature dependence of common-emitter I-V and collector breakdown voltage characteristics in AlGaAs/GaAs and AlInAs/GaInAs HBT's grown by MBE
1992 · R.J. Malik, N. Chand, et al. · IEEE Electron Device Letters · 24
A planar-doped 2D-hole gas base AlGaAs/GaAs heterojunction bipolar transistor grown by molecular beam epitaxy
1988 · R.J. Malik, L.M. Lunardi, et al. · IEEE Electron Device Letters · 23
Evaluation of encapsulation and passivation of InGaAs/InP DHBT devices for long-term reliability
1998 · R. F. Kopf, R. A. Hamm, et al. · Journal of Electronic Materials · 15
Properties and applications of carbon-doped GaAs and AlxGa1-xAs layers grown by MBE with a pyrolytic graphite filament
1993 · R.J. Malik, J. Nagle, et al. · Journal of Crystal Growth · 15
Carbon doping of Ga0.47In0.53As using carbontetrabromide by metalorganic molecular beam epitaxy for InP-based heterostructure bipolar transistor devices
1995 · R. A. Hamm, R. Malik, et al. · Applied Physics Letters · 14
10 and 26 GHz differential VCOs using InP HBTs
2002 · R.K. Montgomery, D.A. Humphrey, et al. · IEEE MTT-S International Microwave Symposium digest · 13
Materials and electrical characteristics of carbon-doped Ga0.47In0.53As using carbontetrabromide by MOMBE for HBT device applications
1996 · R.A. Hamm, S. Chandrasekhar, et al. · Journal of Crystal Growth · 13
Novel fabrication of C-doped base InGaAs/InP DHBT structures for high speed circuit applications
1998 · R.F Kopf, R.A Hamm, et al. · Solid-State Electronics · 9
Dry-etch fabrication of reduced area InGaAs/InP DHBT devices for high speed circuit applications
2000 · R. F. Kopf, R. A. Hamm, et al. · Journal of Electronic Materials · 7
ECR plasma etch fabrication of C-doped base InGaAs/InP DHBT structures: A comparison of CH4/H2/Ar vs BCl3/N2 plasma etch chemistries
1998 · R. F. Kopf, R. A. Hamm, et al. · Journal of Electronic Materials · 7
High performance pseudomorphic power HEMTs
1997 · F. Ren, J.R. Lothian, et al. · Solid-State Electronics · 7
Structural and Electronic Properties of GaAs/InGaAs/GaAs Heterostructures
1989 · J. M. Bonar, R. Hull, et al. · MRS Proceedings · 7
Dielectric-assisted trilayer lift-off process for improved metal definition
1998 · R. W. Ryan, R. F. Kopf, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 6
Self-aligned thin emitter C-doped base InP/InGaAs/InP DHBT's for high speed digital and microwave IC applications
1996 · R.J. Malik, R.A. Hamm, et al. · Conference digest · 6
Characteristics of AlGaAs/GaAs thin-emitter heterojunction bipolar transistors
1990 · Leda M. Lunardi, Roger J. Malik, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 6
Performance and reliability characteristics of GaAs planar doped barrier detector diodes using carbon-doped acceptor spikes grown by molecular beam epitaxy
2002 · R.J. Malik, Y. Anand, et al. · IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits · 1
Alignment with exposed resist in photolithography
1999 · J. Burm, A. Tate, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1
Optimization of the base electrode for InGaAs/InP DHBT structures with a buried emitter-base junction
1998 · R. F. Kopf, R. A. Hamm, et al. · Journal of Electronic Materials · 1
Side-by-side wafer bonding of InP for use with stepper-based lithography
1998 · R. W. Ryan, R. F. Kopf, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1
Works count: 36
Citation count: 479
H-index: 13
I10-index: 13
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