Author

M.I.H. King

Observed names: M. I. H. King, M. King, M.I. King, Mike King

OpenAlex ID: A5034605448

Features and mechanisms of the saturating hot-carrier degradation in LDD NMOSFETs

1996 · A. Raychaudhuri, M.J. Deen, et al. · IEEE Transactions on Electron Devices · 66

A simple method to extract the asymmetry in parasitic source and drain resistances from measurements on a MOS transistor

1995 · A. Raychaudhuri, J. Kolk, et al. · IEEE Transactions on Electron Devices · 38

A simple method to qualify the LDD structure against the early mode of hot-carrier degradation

1996 · A. Raychaudhuri, M.J. Deen, et al. · IEEE Transactions on Electron Devices · 30

Finding the asymmetric parasitic source and drain resistances from the a.c. conductances of a single MOS transistor

1996 · A. Raychaudhuri, M.J. Deen, et al. · Solid-State Electronics · 27

Design and characterization of submicron BiCMOS compatible high-voltage NMOS and PMOS devices

1997 · Yong Qiang Li, A.T. Salama, et al. · IEEE Transactions on Electron Devices · 24

A deep-depletion CCD imager for soft X-ray, visible, and near-infrared sensing

1985 · Hak-Yam Tsoi, J.P. Ellul, et al. · IEEE Transactions on Electron Devices · 17

Submicron BICMOS compatible high voltage MOS transistors

2002 · Y.Q. Li, C.A.T. Salama, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 13

Study of reactive-ion-etched silicon by a novel ultrashallow depth profiling technique

1994 · W. H. Chang, L. J. Huang, et al. · Applied Physics Letters · 7

IVB-2 memory effect and enhanced conductivity in Si-implanted thermally grown SiO2

1987 · A. Kalnitsky, M.I.H. King, et al. · IEEE Transactions on Electron Devices · 7

Integration of high-voltage NMOS devices into a sub micron BiCMOS process using simple structural changes

2002 · Yong Qiane Li, C.A.T. Salama, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 6

Thin Gate and Poly Oxides by High Pressure Silicon Oxidation

1987 · S. P. Tay, J. P. Ellul, et al. · Journal of The Electrochemical Society · 6

PDF

A fully resurfed, BiCMOS-compatible, high voltage MOS transistor

2002 · Min Liu, C.A.T. Salama, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 5

A Simple Method to Extract the Parasitic Resistances from a Single MOSFET using Measurements of Small-Signal Conductances

1995 · A. Raychaudhuri, M. Jamal Deen, et al. · European Solid-State Device Research Conference · 5

Analysis and removal of impurities and defects in reactive ion etched silicon using a novel depth-profiling technique

1994 · W. H. Chang, L. J. Huang, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 5

Applications of High-Pressure Technology to Ulsi Fabrication

1986 · S.P. Tay, J.P. Ellul, et al. · MRS Proceedings · 1

A resurfed high-voltage NMOS device fully compatible with a low-voltage 0.8 μm BiCMOS technology

1996 · Yong Qiang Li, C.Andre T. Salama, et al. · Solid-State Electronics

Method to ualify the LDD Structure st the Early Mode of Hot-Carrier Degradation

1996 · A. Raychaudhuri, M. Jmal Deen, et al.

Nanometer p–n junction formation and characterization

1994 · W. M. Lau, L. J. Huang, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

A precision design technique for analog very large scale integration

1985 · K. R. Lakshmi Kumar, R. A. Hadaway, et al. · Canadian Journal of Physics

Works count: 19

Citation count: 257

H-index: 7

I10-index: 7