Author

Shawn R. Gibb

Observed names: Gibb, S., S. Gibb, S. R. Gibb, S.R. Gibb, SHAWN R. GIBB, Shawn Gibb

Observed institution: Emcore (United States)

OpenAlex ID: A5035271599

270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power

2013 · James R. Grandusky, Jianfeng Chen, et al. · Applied Physics Express · 180

High Output Power from 260 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Improved Thermal Performance

2011 · James R. Grandusky, Shawn R. Gibb, et al. · Applied Physics Express · 156

Properties of Mid-Ultraviolet Light Emitting Diodes Fabricated from Pseudomorphic Layers on Bulk Aluminum Nitride Substrates

2010 · James R. Grandusky, Shawn R. Gibb, et al. · Applied Physics Express · 64

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Low loss, 3.7GHz wideband BAW filters, using high power single crystal AlN-on-SiC resonators

2017 · Jeffrey B. Shealy, Ramakrishna Vetury, et al. · IEEE MTT-S International Microwave Symposium digest · 58

Reliability assessment of AlGaN/GaN HEMT technology on SiC for 48V applications

2008 · Sangmin Lee, Ramakrishna Vetury, et al. · IEEE International Reliability Physics Symposium proceedings · 47

Control of epitaxial defects for optimal AlGaN/GaN HEMT performance and reliability

2004 · D.S. Green, S.R. Gibb, et al. · Journal of Crystal Growth · 43

High Power, High Efficiency, AlGaN/GaN HEMT Technology for Wireless Base Station Applications

2005 · R. Vetury, Y. Wei, et al. · IEEE MTT-S International Microwave Symposium digest · 41

Gallium nitride (GaN) HEMT's: progress and potential for commercial applications

2003 · J. Shealy, J. Smart, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 39

GaN HEMT thermal behavior and implications for reliability testing and analysis

2008 · Daniel S. Green, Bharath Vembu, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 34

High rejection UNII 5.2GHz wideband bulk acoustic wave filters using undoped single crystal AlN-on-SiC resonators

2017 · Michael D. Hodge, Ramakrishna Vetury, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 29

Reliability and performance of pseudomorphic ultraviolet light emitting diodes on bulk aluminum nitride substrates

2011 · James R. Grandusky, Shawn R. Gibb, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 21

Performance, Reliability, and Manufacturability of AlGaN/GaN High Electron Mobility Transistors on Silicon Carbide Substrates

2006 · Jeffrey D. Brown, Shawn Gibb, et al. · ECS Transactions · 20

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Performance and reliability of ultraviolet‐C pseudomorphic light emitting diodes on bulk AlN substrates

2010 · James Grandusky, Yongjie Cui, et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 17

Performance and RF Reliability of GaN-on-SiC HEMT's using Dual-Gate Architectures

2006 · R. Vetury, J.B. Shealy, et al. · IEEE MTT-S International Microwave Symposium digest · 16

Single crystal AlGaN bulk acoustic wave resonators on silicon substrates with high electromechanical coupling

2016 · Jeffrey B. Shealy, Michael D. Hodge, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 15

GaN Wide Band Power Integrated Circuits

2006 · J. P. Conlon, N. Zhang, et al. · Technical digest -- IEEE Compound Semiconductor Integrated Circuit Symposium · 12

High-power pseudomorphic mid-ultraviolet light-emitting diodes with improved efficiency and lifetime

2014 · Craig G. Moe, James R. Grandusky, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 7

Status of GaN HEMT performance and reliability

2008 · Daniel S. Green, J. D. Brown, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 7

AlGaN/GaN 120W WCDMA Doherty Amplifier with Digital Pre-Distortion Correction

2006 · M. J. Poulton, W. K. Leverich, et al. · The ... IEEE Annual Wireless and Microwave Technology Conference · 6

Linearity and Efficiency Performance of GaN HEMTs with Digital Pre-Distortion Correction

2006 · M. Poulton, W. Leverich, et al. · IEEE MTT-S International Microwave Symposium digest · 5

Improved photon extraction by substrate thinning and surface roughening in 260 nm pseudomorphic ultraviolet light emitting diodes

2012 · Jianfeng Chen, James R. Grandusky, et al. · IEEE Lester Eastman Conference on High Performance Devices · 3

High Power Pseudomorphic Mid Ultraviolet Light Emitting Diodes with Improved Efficiency and Lifetime

2013 · Jianfeng (Jeff) Chen, James R. Grandusky, et al. · OSA Light, Energy and the Environment Congress · 2

Improved efficiency high power 260 nm pseudomorphic ultraviolet light emitting diodes

2012 · James R. Grandusky, Jianfeng Chen, et al. · IEEE Lester Eastman Conference on High Performance Devices · 2

PERFORMANCE OF PSEUDOMORPHIC ULTRAVIOLET LEDs GROWN ON BULK ALUMINUM NITRIDE SUBSTRATES

2011 · SHAWN R. GIBB, JAMES R. GRANDUSKY, et al. · International Journal of High Speed Electronics and Systems · 2

Picosecond ultrasonics: Characterization of single crystal piezoelectric materials for advanced RF filters

2018 · C. Hayden, J. B. Kwon, et al. · ASMC proceedings · 1

Works count: 39

Citation count: 831

H-index: 15

I10-index: 16