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Juraj Marek

Observed names: J Marek, J. Marek, Marek, Juraj
ORCID: 0000-0001-5612-430X
Observed ORCID: 0000-0001-5612-430X
OpenAlex ID: A5035790638
Advanced Methodology for Fast 3-D TCAD Device/Circuit Electrothermal Simulation and Analysis of Power HEMTs
2015 · Ales Chvala, Daniel Donoval, et al. · IEEE Transactions on Electron Devices · 41
Compact model of power MOSFET with temperature dependent Cauer RC network for more accurate thermal simulations
2014 · Juraj Marek, Aleš Chvála, et al. · Solid-State Electronics · 33
Fast 3-D Electrothermal Device/Circuit Simulation of Power Superjunction MOSFET Based on SDevice and HSPICE Interaction
2014 · Ales Chvala, Daniel Donoval, et al. · IEEE Transactions on Electron Devices · 26
Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation
2017 · Aleš Chvála, Juraj Marek, et al. · Microelectronics Reliability · 24
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Evaluation of the ruggedness of power DMOS transistor from electro-thermal simulation of UIS behaviour
2008 · Daniel Donoval, Andrej Vrbicky, et al. · Solid-State Electronics · 22
Effective 3-D Device Electrothermal Simulation Analysis of Influence of Metallization Geometry on Multifinger Power HEMTs Properties
2016 · Ales Chvala, Juraj Marek, et al. · IEEE Transactions on Electron Devices · 19
Simulation study of interface traps and bulk traps in n++GaN/InAlN/AlN/GaN high electron mobility transistors
2014 · M. Molnár, D. Donoval, et al. · Applied Surface Science · 19
Advanced Characterization Techniques and Analysis of Thermal Properties of AlGaN/GaN Multifinger Power HEMTs on SiC Substrate Supported by Three-Dimensional Simulation
2019 · Aleš Chvála, Robert Szobolovszký, et al. · Journal of Electronic Packaging · 16
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Suppression of interface recombination by buffer layer for back contacted silicon heterojunction solar cells
2014 · Miroslav Mikolášek, Patrik Príbytný, et al. · Applied Surface Science · 16
Trapped charge effects in AlGaN/GaN metal-oxide-semiconductor structures with Al2O3and ZrO2gate insulator
2014 · R Stoklas, D Gregušová, et al. · Semiconductor Science and Technology · 15
Characterization and evaluation of current transport properties of power SiC Schottky diode
2021 · Aleš Chvála, Juraj Marek, et al. · Materials Today Proceedings · 14
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Impact of repetitive UIS on modern GaN power devices
2016 · Juraj Marek, Lubica Stuchlikova, et al. · International Conference on Advanced Semiconductor Devices and Microsystems · 13
Technology of integrated self-aligned E/D-mode n ++ GaN/InAlN/AlN/GaN MOS HEMTs for mixed-signal electronics
2016 · M Blaho, D Gregušová, et al. · Semiconductor Science and Technology · 13
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Power P-GaN HEMT Under Single and Multi-Pulse UIS Conditions
2018 · Jozef Kozarik, Juraj Marek, et al. · International Conference on Advanced Semiconductor Devices and Microsystems · 12
Charge Trap States of SiC Power TrenchMOS Transistor under Repetitive Unclamped Inductive Switching Stress
2022 · Juraj Marek, Jozef Kozarik, et al. · Materials · 11
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Power p-GaN HEMT Under Unclamped Inductive Switching Conditions
2018 · Juraj Marek, A. Šatka, et al. · 10
Characterization of Monolithic InAlN/GaN NAND Logic Cell Supported by Circuit and Device Simulations
2018 · Ales Chvala, Lukas Nagy, et al. · IEEE Transactions on Electron Devices · 10
Power transistor models with temperature dependent parasitic effects for SPICE-like circuit simulation
2012 · A. Chvala, D. Donoval, et al. · IEEE International Conference on Microelectronics (MIEL) · 9
International Conference on Silicon Carbide and Related Materials ICSCRM 2022
2023 · Juraj Marek, Gregor Pobegen, et al. · Trans Tech Publications Ltd. eBooks · 8
Semi-insulating GaN for vertical structures: role of substrate selection and growth pressure
2020 · P. Šichman, S. Hasenöhrl, et al. · Materials Science in Semiconductor Processing · 7
Advanced methodology for fast 3-D TCAD electrothermal simulation of power HEMTs including package
2015 · Ales Chvala, Daniel Donoval, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 7
Analysis of Novel MagFET Structures for Built-in Current Sensors Supported by 3D Modeling and Simulation
2008 · Juraj Marek, Daniel Donoval, et al. · International Conference on Advanced Semiconductor Devices and Microsystems · 7
Analysis of the electro-thermal behavior of DMOS transistor structure during multi-pulse UIS Test
2008 · J. Marek, D. Donoval, et al. · International Seminar on Power Semiconductors (ISPS) · 7
Electro-thermal analysis and optimization of edge termination of power diode supported by 2D numerical modeling and simulation
2011 · P. Pribytny, D. Donoval, et al. · Microelectronics Reliability · 6
Analysis of reliability and optimization of ESD protection devices supported by modeling and simulation
2011 · A. Chvala, D. Donoval, et al. · Microelectronics Reliability · 6
Works count: 119
Citation count: 447
H-index: 13
I10-index: 17
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