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Author

Samir Mouhoubi

Observed name: S. Mouhoubi
ORCID: 0009-0001-3091-2567
Observed ORCID: 0009-0001-3091-2567
OpenAlex ID: A5036043457
Gate Characteristics of Enhancement-Mode Fully Depleted p -GaN Gate HEMT
2023 · Jiahui Sun, Samir Mouhoubi, et al. · IEEE Electron Device Letters · 25
The Effect of Proton Irradiation in Suppressing Current Collapse in AlGaN/GaN High-Electron-Mobility Transistors
2018 · A. Stockman, A. Tajalli, et al. · IEEE Transactions on Electron Devices · 22
Next generation of Deep Trench Isolation for Smart Power technologies with 120V high-voltage devices
2010 · R. Charavel, J. Roig, et al. · Microelectronics Reliability · 17
Body-diode related losses in Shield-Plate FETs for SiP 12V-input DC/DC buck converters operating at high-frequency (4MHz)
2012 · J. Roig, S. Mouhoubi, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 15
Solutions to improve flatness of Id-Vd curves of rugged nLDMOS
2011 · S. Mouhoubi, F. Bauwens, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 12
Deep Learning-Based Visual Recognition for Inline Defects in Production of Semiconductors
2023 · Khouloud Limam, Shahzad Cheema, et al. · IEEE Journal of Emerging and Selected Topics in Industrial Electronics · 10
A high-speed silicon FET for efficient DC-DC power conversion
2012 · Gary Loechelt, Gordy Grivna, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 10
Accumulation region length impact on 0.18µm CMOS fully-compatible lateral power MOSFETs with Shallow Trench Isolation
2009 · J. Roig, P. Moens, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 8
2.7 kV E-Mode Multichannel GaN-on-Si Based on p-Type NiO/SiO2 Junction Tri-Gate
2025 · Amirhossein Esteghamat, Zheng Hao, et al. · IEEE Electron Device Letters · 7
Investigation of the long-term dynamic RDS(on) variation and dynamic high temperature operating life test robustness of Schottky gate and ohmic gate GaN HEMT with comparable stress conditions
2025 · Fawad Rauf, Muhammad Farhan Tayyab, et al. · Microelectronics Reliability · 6
Determination of the Junction Temperature Under Load Current in GaN Power Devices with Schottky Gate Leakage Current as TSEP
2024 · Maximilian Goller, Jörg Franke, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 5
Dynamic-ron control via proton irradiation in AlGaN/GaN transistors
2018 · A. Tajalli, A. Stockman, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 4
Gate-Oxide Breakage Assisted by HCI in Advanced STI DeMOS Transistors
2012 · I. Cortes, J. Roig, et al. · IEEE Electron Device Letters · 3
New VDMOS structure with Discontinuous Thick Inter-Body Oxide to reduce gate-to-drain charge
2010 · J. Roig, S. Mouhoubi, et al. · 3
Thermal behavior of floating gate oxide defects (moving bits)
2007 · S. Mouhoubi, T. Yao, et al. · Journal of Non-Crystalline Solids · 3
Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs
2024 · Maximilian Goller, Jörg Franke, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 2
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Near-zero gate bouncing in high-frequency converters with shield-plate FETs
2013 · Jaume Roig, Hal Massie, et al. · Conference proceedings/Conference proceedings - IEEE Applied Power Electronics Conference and Exposition · 2
Partial discharges behaviour in a rod-plane arrangement with an insulating barrier
2007 · S. Mouhoubi, A. Boubakeur · Archives of Electrical Engineering · 2
The fully depleted p-GaN gate concept for V th instability suppression and better gate reliability in E-HEMT GaN technology
2025 · Samir Mouhoubi, Shradha Gupta, et al. · Japanese Journal of Applied Physics · 1
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Improved current filament control during Zener diode zapping
2012 · J. Roig, J. Lebon, et al. · Microelectronics Reliability · 1
A family of robust DMOS devices for automotive applications
2012 · S. Mouhoubi, Y. Wu, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 1
Improved Trench-Based Power Rectifiers for High-Temperature Smart-Power Applications
2009 · J. Roig, D. Jordan, et al. · IEEE Electron Device Letters · 1
Adapted temperature calibration for Schottky p-GaN power HEMTs
2023 · Maximilian Goller, Jörg Franke, et al. · International Seminar on Power Semiconductors (ISPS)
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Works count: 23
Citation count: 160
H-index: 8
I10-index: 7
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