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T. Lester
Observed names:
Lester, Timothy,
Lester, Timothy Paul,
T Lester,
T. LESTER,
T. P LESTER,
T. P. Lester,
T.P. Lester
show all 7
Institution:
Institute for Microstructural Sciences
Observed institutions:
University of British Columbia,
Nortel (Canada),
Bell (Canada),
Institute for Microstructural Sciences,
National Research Council Canada
OpenAlex ID:
A5036051829
Monolithic integration of AlGaN/GaN HFET with MOS on silicon 〈111〉 substrates
2010
·
P.N. Chyurlia
, F. Semond
, et al.
·
Electronics Letters
·
31
PDF
Performance of Pd–Ge based ohmic contacts to n-type GaAs
1997
·
D. G IVEY
, S. EICHER
, et al.
·
Journal of Materials Science Materials in Electronics
·
17
GaN HEMT and MOS monolithic integration on silicon substrates
2011
·
P. Chyurlia
, H. Tang
, et al.
·
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
·
11
PDF
A new MOS photon-counting sensor operating in the above-breakdown regime
1984
·
T.P. Lester
, D.L. Pulfrey
·
IEEE Transactions on Electron Devices
·
9
Windowed growth of AlGaN/GaN heterostructures on Silicon 〈111〉 substrates for future MOS integration
2009
·
P. Chyurlia
, F. Semond
, et al.
·
physica status solidi (a)
·
7
Selectively grown AlGaN/GaN HEMTs on Si(111) substrates for integration with silicon microelectronics
2008
·
S. Haffouz
, F. Semond
, et al.
·
Journal of Crystal Growth
·
4
AlGaN/GaN HFETs fabricated from maskless selectively grown mesas on Si(111) substrates
2007
·
J.A. Bardwell
, S. Haffouz
, et al.
·
Electronics Letters
·
4
Microstructural analysis of Pd/Pt/Au/Pd ohmic contacts to InGaP/GaAs
1997
·
D. G IVEY
, R ZHANG
, et al.
·
Journal of Materials Science Materials in Electronics
·
4
Microstructural analysis of a Au/Pt/Pd/Zn ohmic contact to an AlGaAs/GaAs heterojunction bipolar transistor
1996
·
P. Jian
, D. G. Ivey
, et al.
·
Journal of Electronic Materials
·
4
A new method based on the superposition principle for the calculation of the two-dimensional potential in a buried-channel charge-coupled device
1984
·
T.P. Lester
, D.L. Pulfrey
·
IEEE Transactions on Electron Devices
·
4
Airborne Contamination on Semiconductor Wafers Traced to Humidification Plant Additives
1993
·
N. Berro
, J. Cook
, et al.
·
Journal of the IEST
·
3
Effect of internal resistances in GaAs/AlxGa1-xAs heterostructures with parallel conduction
1989
·
C M Hurd
, S P McAlister
, et al.
·
Semiconductor Science and Technology
·
3
Precision Radial Velocities And Residual Problems With Reticon Arrays
1981
·
B. Campbell
, G. A. H. Walker
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
3
Monolithic integrated optoelectronic transmitter on GaAs with fully RIE GRINSCH laser diode
2003
·
M. Svilans
, T. Lester
, et al.
·
10th Annual IEEE (GaAs IC) Symposium, Gallium Arsenide Integrated Circuit. Technical Digest 1988.
·
1
The effect of emitter layer variations on the current gain of AlGaAs-GaAs heterojunction bipolar transistors grown by chemical beam epitaxy
1994
·
W.T. Moore
, A.J. SpringThorpe
, et al.
·
Journal of Crystal Growth
·
1
A solid state detector head for astronomical applications
2010
·
Lester, Timothy Paul
·
cIRcle (University of British Columbia)
PDF
CCD images obtained with the Canada-France-Hawaii Telescope.
1980
·
Paul Hickson
, J. R. Auman
, et al.
·
Journal of the Royal Astronomical Society of Canada
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Works count:
19
Citation count:
106
H-index:
5
I10-index:
3
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