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H. Bender

A simple and effective light trapping technique for polycrystalline silicon solar cells
1992 · G. Willeke, H. Nussbaumer, et al. · Solar Energy Materials and Solar Cells · 83
Hydrogen Passivation of HF ‐ Last Cleaned (100) Silicon Surfaces Investigated by Multiple Internal Reflection Infrared Spectroscopy
1994 · H. Bender, S. Verhaverbeke, et al. · Journal of The Electrochemical Society · 40
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Polycrystalline silicon solar cells with a mechanically formed texturization
1993 · H. Bender, J. Szlufcik, et al. · Applied Physics Letters · 35
Evaluation of interferometric ellipsometer systems with a time resolution of one microsecond and faster
1998 · K Hemmes, M.A Hamstra, et al. · Thin Solid Films · 17
Dynamics of the solidification of laser-annealed Si thin films
1993 · J Boneberg, J Nedelcu, et al. · Materials Science and Engineering A · 16
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Determination of stress in shallow trench isolation for deep submicron MOS devices by UV Raman spectroscopy
2003 · K.F. Dombrowski, A. Fischer, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11
The structure of vicinal (111) surfaces of perfect and dislocation-rich Ge crystals doped with Ga
1993 · P Molinas-Mata, J Zegenhagen, et al. · Journal of Physics Condensed Matter · 8
Key factors to sustain the extension of a MHM-based integration scheme to medium and high porosity PECVD low-k materials
2008 · Y. Travaly, J. van Aelst, et al. · IEEE International Interconnect Technology Conference (IITC) · 7
Characterization of SIPOS films by spectroscopic ellipsometry and transmission electron microscopy
1994 · G. Kragler, H. Bender, et al. · Applied Physics A · 6
Influence of the as and BF2 Junction Implantation on Stress Induced Defects During Ti- and Co/Ti-Silicidation
1999 · A. Steegen, H. Bender, et al. · MRS Proceedings · 2
Damage layer in silica-based low-k material induced by the patterning plasma process studied by energy-filtered TEM
2006 · O Richard, F Iacopi, et al. · Springer eBooks · 1
Low-k properties and integration processes enabling reliable interconnect scaling to the 32 nm technology node
2006 · A. Ikeda, Y. Travaly, et al. · IEEE International Interconnect Technology Conference (IITC) · 1
On the homogeneous nucleation of dislocations during integrated-circuit processing
1989 · Jan Vanhellemont, H. Bender, et al. · Institute of physics conference series/Institute of Physics conference series · 1
HRTEM study of GaAs/AlAs interfaces: comparison of experimental, calculated and processed images
2020 · A F de Jong, W Coene, et al. · CRC Press eBooks
Characterisation of the local stress induced by shallow trench isolation and CoSi2 silicidation
2018 · C Stuer, A Steegen, et al. · CRC Press eBooks
Morphology and defects in shallow trench isolation structures
1999 · C. Stuer, J. Van Landuyt, et al.
Advanced interconnects and contact materials and processing for future IC's
1998 · H Li, Ann Witvrouw, et al.
HREM characterization of ion beans synthesized ternary silicides in (111) silicon
1995 · Jason R. Tavares, H. Bender, et al. · Institute of physics conference series/Institute of Physics conference series
Works count: 18
Citation count: 228
H-index: 7
I10-index: 6
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