Get started
Author

B. Emmerstorfer

Observed name: B.F. Emmerstorfer
Institution: Nortel (Canada)
OpenAlex ID: A5037805178
Measurement of GaAs surface oxide desorption temperatures
1987 · A. J. SpringThorpe, S. J. Ingrey, et al. · Applied Physics Letters · 122
MOCVD of InP and mass transport on structured InP substrates
1986 · C. Blaauw, A. Szaplonczay, et al. · Journal of Crystal Growth · 50
Analysis of a time-dependent supply mechanism in selective area growth by MOCVD
2002 · J.E. Greenspan, C. Blaauw, et al. · Journal of Crystal Growth · 31
Metalorganic chemical-vapour-deposition growth and characterization of GaAs
1985 · C. Blaauw, C. Miner, et al. · Canadian Journal of Physics · 29
Cadmium doping of InP grown by MOCVD
1987 · C. Blaauw, B. Emmerstorfer, et al. · Journal of Crystal Growth · 26
Low pressure MOCVD growth of buried heterostructure laser wafers using high quality semi-insulating InP
1992 · D. G. Knight, B. Emmerstorfer, et al. · Journal of Electronic Materials · 17
Characterization of Mg-doped InP grown by MOCVD using a bis(methylcyclopentadienyl)magnesium dopant source
1989 · C. Blaauw, R. A. Bruce, et al. · Journal of Electronic Materials · 17
Growth mechanisms and modeling for metalorganic chemical vapor deposition selective-area epitaxy on InP substrates
2000 · J. E. Greenspan, X. Zhang, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 16
CVD-SiO2 and plasma-SiNx films as Zn diffusion masks for GaAs
1984 · C. Blaauw, A. J. SpringThorpe, et al. · Journal of Electronic Materials · 14
Effects of S, Si, or Fe dopants on the diffusion of Zn in InP during MOCVD
1992 · C. Blaauw, B. Emmerstorfer, et al. · Journal of Electronic Materials · 12
Design and whole-wafer performance of separate absorption, grading, charge, and multiplication InP/InGaAs avalanche photodiodes
1994 · Larry E. Tarof, Jeffrey C. Yu, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 8
Reliability of InP-based avalanche photodiodes for high bit-rate fiber-optic communication systems
2003 · S. Smetona, K. Klunder, et al. · Conference proceedings. ... International Conference on Indium Phosphide and Related Materials · 5
Incorporation and activation of Fe in InP using low pressure MOCVD
1992 · D.G. Knight, B. Emmerstorfer · Journal of Crystal Growth · 5
Summary Abstract: Measurement of GaAs surface oxide desorption temperatures
1987 · A. J. SpringThorpe, S. J. Ingrey, et al. · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 4
Optimization of selective area epitaxy for fabrication of circular grating distributed-Bragg-reflector surface-emitting lasers
1993 · D.G. Knight, C.J. Miner, et al. · Journal of Crystal Growth · 3
High radiance Burrus LED's with integral 45° mirrors
1982 · A.J. SpringThorpe, C.M. Look, et al. · IEEE Transactions on Electron Devices · 2
A silicon susceptor for MOCVD
1985 · C. Blaauw, A. J. SpringThorpe, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
Works count: 17
Citation count: 361
H-index: 10
I10-index: 10
Year
Topic
Type