Author

Luc Geenen

Observed names: Geenen Luc, L Geenen, L. Geenen

Institution: IMEC

Observed institution: IMEC

OpenAlex ID: A5037850050

New low-stress PECVD poly-SiGe layers for MEMS

2003 · C. Rusu, S. Sedky, et al. · Journal of Microelectromechanical Systems · 48

N2 as carrier gas: an alternative to H2 for enhanced epitaxy of Si, SiGe and SiGe:C

2003 · P Meunier-Beillard, M Caymax, et al. · Applied Surface Science · 36

Chemical and electrical dopants profile evolution during solid phase epitaxial regrowth

2004 · B. J. Pawlak, R. Lindsay, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 23

Cesium near-surface concentration in low energy, negative mode dynamic SIMS

2008 · B. Berghmans, B. Van Daele, et al. · Applied Surface Science · 18

Accurate electrical activation characterization of CMOS ultra-shallow profiles

2004 · T. Clarysse, F. Dortu, et al. · Materials Science and Engineering B · 15

Analysis of Selectively Grown Epitaxial Si[sub 1−x]Ge[sub x] by Spectroscopic Ellipsometry and Comparison with Other Established Techniques

2000 · R. Loo, M. Caymax, et al. · Journal of The Electrochemical Society · 13

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Study of Ni-Silicide Contacts to Si:C Source/Drain.

2006 · Sofie Mertens, Yonah Cho, et al. · ECS Transactions · 11

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Low temperature epitaxy and the importance of moisture control

2008 · F.E. Leys, A. Hikavyy, et al. · Thin Solid Films · 9

Selective Epitaxy of Si/SiGe to Improve pMOS Devices by Recessed Source/Drain and/or Buried SiGe Channels

2006 · Roger Loo, Peter Verheyen, et al. · ECS Transactions · 7

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Analysis of the Pre-epi Bake Conditions on the Defect Creation in Recessed SiGe S/D Junctions

2007 · Mireia Bargallo Gonzalez, Nicole Thomas, et al. · ECS Transactions · 3

Modulation of the Ni FUSI workfunction by Yb doping: from midgap to n-type band-edge

2006 · H.Y. Yu, J.D. Chen, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 3

Depth profiling of B through silicide on silicon structures, using secondary ion-mass spectrometry and resonant postionization mass spectrometry

1996 · P. De Bisschop, J. Gomez, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2

On the Use of Indium and Gallium as P-Type Dopants in Si 0.1 μm MOSFETs

1995 · Serge Biesemans, Stefan Kubicek, et al. · International Conference on Solid State Devices and Materials (SSDM) · 2

Threshold voltage design incompatibility between partially-depleted SOI and bulk CMOS transistors

2003 · H. Van Meer, Jeong-Ho Lyu, et al. · IEEE International SOI Conference (SOI) · 1

Depth resolution and surface transients in crystalline Silicon at ultra low energies

2009 · Jozefien Goossens, Bart Berghmans, et al. · ORBi (University of Liège)

Ion implantation in Ge and associated defect control

2005 · A. Satta, Eddy Simoen, et al.

Ge-migration in s-Si-SiGe structures during implantation and annealing

2005 · Wilfried Vandervorst, Tom Janssens, et al.

The limitations of SIMS in nanoscale technologies: quantitative near-surface and interfacial analysis of complex systems

2005 · Wilfried Vandervorst, Tom Janssens, et al.