Get started
Author

Michel Buczko

Observed names: Buczko, Buczko, M., M. Buczko, M. Buczkó
Observed institution: STMicroelectronics (France)
OpenAlex ID: A5038001123
A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives
2014 · P. Chevalier, G. Avenier, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 200
0.13 $\mu$m SiGe BiCMOS Technology Fully Dedicated to mm-Wave Applications
2009 · GrÉgory Avenier, Malick Diop, et al. · IEEE Journal of Solid-State Circuits · 151
A conventional double-polysilicon FSA-SEG Si/SiGe:C HBT reaching 400 GHz fMAX
2009 · P. Chevalier, F. Pourchon, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 67
0.13μm SiGe BiCMOS technology for mm-wave applications
2008 · G. Avenier, P. Chevalier, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 58
SiGe HBTs featuring fT ≫400GHz at room temperature
2008 · B. Geynet, F. Danneville, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 39
Highly linear and sub 120 fs Ron × Coff 130 nm RF SOI technology targeting 5G carrier aggregation RF switches and FEM SOC
2016 · F. Gianesello, A. Monroy, et al. · IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) · 29
Pushing conventional SiGe HBT technology towards "Dotfive" terahertz
2010 · Chantre, Chevalier, et al. · HAL · 29
PD-SOI CMOS and SiGe BiCMOS Technologies for 5G and 6G communications
2020 · P. Chevalier, F. Gianesello, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 19
Low-Noise Si/SiGe HBT for LEO Satellite User Terminals in Ku-Ka Bands
2023 · A. Gauthier, E. Brezza, et al. · IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) · 17
A Versatile 55-nm SiGe BiCMOS Technology for Wired, Wireless, and Satcom Applications
2024 · P. Chevalier, F. Cacho, et al. · IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) · 16
Vertical profile optimization for +400 GHz fMAX Si/SiGe:C HBTs
2010 · T. Lacave, P. Chevalier, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 16
450 GHz $f_{\text{T}}$ SiGe:C HBT Featuring an Implanted Collector in a 55-nm CMOS Node
2018 · A. Gauthier, J. Borrel, et al. · IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS) · 13
Extrinsic base resistance optimization in DPSA-SEG SiGe:C HBTs
2012 · E. Canderle, P. Chevalier, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 13
High field transport characterization in nano MOSFETs using 10GHz capacitance measurements
2013 · C. Diouf, A. Cros, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 11
Influence of the Selectively Implanted Collector Integration on +400 GHz fMAX Si/SiGe:C HBTs
2010 · Thomas Lacave, Pascal Chevalier, et al. · ECS Transactions · 9
PDF
A selective epitaxy collector module for high-speed Si/SiGe:C HBTs
2009 · B. Geynet, P. Chevalier, et al. · Solid-State Electronics · 9
Scalable Analytical Model of 1.7 THz Cut-off Frequency Schottky Diodes Integrated in 55nm BiCMOS Technology
2019 · Vincent Gidel, Frederic Gianesello, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 5
0.13 μm HR SiGe BiCMOS Technology exhibiting 169 fs Ronx CoffSwitch Performance targeting WiFi 6E Fully-Integrated RF Front-End-IC Solutions
2022 · F. Gianesello, C. Charbuillet, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 4
Smart Way to Adjust Schottky Barrier Height in 130 nm BiCMOS Process for sub-THz Applications
2020 · Vincent Gidel, Frederic Gianesello, et al. · IEEE Radio and Wireless Symposium (RWS) · 4
Improvement of the RF power performance of nLDMOSFETs on bulk and SOI substrates with ‘ribbon’ gate and source contacts layouts
2009 · D. Fournier, D. Ducatteau, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 3
450 GHz f T SiGe: C HBT Featuring an Implanted Collector in a 55-nm CMOS Node.
2018 · Alexis Gauthier, J. Borrel, et al.
Influence of the Selectively Implanted Collector Integration on +400 GHz fMAX Si/SiGe:C HBTs
2010 · Thomas Lacave, Pascal Chevalier, et al. · ECS Meeting Abstracts
PDF
Impact of the gate layout on the performance of RF power nLDMOSFETs integrated in a 0.13-µm CMOS technology
2009 · Fournier, D., Ducatteau, D., et al. · HAL
Amélioration de la fréquence maximale d'oscillation de transistors nLDEMOS de puissance en nœud CMOS 0.13µm
2008 · Fournier, D., Ducatteau, D., et al. · HAL
A selective epitaxy collector module for high-speed Si/SiGe:C HBTs
2008 · Geynet, B., Chevalier, P., et al. · HAL
Works count: 26
Citation count: 712
H-index: 13
I10-index: 14
Year
Topic
Type