A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives
Year: 2014
Type: conference-paper
Authors: P. Chevalier, G. Avenier, G. Ribes, A. Montagne, E. Canderle, D. Celi, N. Derrier, C. Deglise, C. Durand, T. Quemerais, M. Buczko, D. Gloria, O. Robin, S. Petitdidier, Y. Campidelli, F. Abbate, M. Gros-Jean, L. Berthier, J.D. Chapon, F. Leverd, C. Jenny, C. Richard, O. Gourhant, C. De-Buttet, R. Beneyton, P. Maury, S. Joblot, L. Favennec, M. Guillermet, P. Brun, K. Courouble, K. Haxaire, G. Imbert, E. Gourvest, J. Cossalter, O. Saxod, C. Tavernier, F. Foussadier, B. Ramadout, R. Bianchini, C. Julien, D. Ney, J. Rosa, S. Haendler, Y. Carminati, B. Borot
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
Funder: Eurostars
OpenAlex ID: W2017358755