Author

J. Cossalter

Institution: STMicroelectronics (France)

Observed institution: STMicroelectronics (France)

OpenAlex ID: A5019686018

A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives

2014 · P. Chevalier, G. Avenier, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 200

Works count: 1

Citation count: 200

H-index: 1

I10-index: 1