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Keerthi Dorai Swamy Reddy
Observed names:
K. Dorai Swamy Redd,
K. Dorai Swamy Reddy
Institution:
Leibniz Institute for High Performance Microelectronics
Observed institution:
Leibniz Institute for High Performance Microelectronics
ORCID:
0000-0001-5260-7929
Observed ORCID:
0000-0001-5260-7929
OpenAlex ID:
A5038456400
Kinetic Monte Carlo simulation analysis of the conductance drift in Multilevel HfO 2 -based RRAM devices
2024
·
D. Maldonado
, A. Baroni
, et al.
·
Nanoscale
·
17
PDF
Forming and Resistive Switching of HfO₂-Based RRAM Devices at Cryogenic Temperature
2024
·
Emilio Perez-Bosch Quesada
, Alberto Mistroni
, et al.
·
IEEE Electron Device Letters
·
16
PDF
Enhancing RRAM Reliability: Exploring the Effects of Al Doping on HfO 2 -Based Devices
2025
·
Andrea Baroni
, Eduardo Pérez
, et al.
·
IEEE Transactions on Device and Materials Reliability
·
9
A comprehensive statistical study of the post-programming conductance drift in HfO2-based memristive devices
2025
·
D. Maldonado
, C. Acal
, et al.
·
Materials Science in Semiconductor Processing
·
9
Optimization of technology processes for enhanced CMOS-integrated 1T-1R RRAM device performance
2024
·
Keerthi Dorai Swamy Reddy
, Eduardo Pérez
, et al.
·
The European Physical Journal B
·
8
PDF
Blooming and pruning: learning from mistakes with memristive synapses
2024
·
Kristina Nikiruy
, Eduardo Perez
, et al.
·
Scientific Reports
·
7
PDF
Influence of stop and gate voltage on resistive switching of 1T1R HfO2-based memristors, a modeling and variability analysis
2024
·
David Maldonado
, Antonio Cantudo
, et al.
·
Materials Science in Semiconductor Processing
·
6
Plasma-enhanced atomic layer deposition of silicon nitride for front-end-of-line applications
2023
·
Marco Lisker
, Mamathamba Kalishettyhalli Mahadevaiah
, et al.
·
Journal of Vacuum Science & Technology A Vacuum Surfaces and Films
·
6
PDF
Comparing Short and Long-term Reliability of HfO 2 and Al: HfO 2 RRAM Devices
2024
·
A. Baroni
, E. Pérez
, et al.
·
IEEE International Integrated Reliability Workshop final report
·
5
A Compact One-Transistor-Multiple-RRAM Characterization Platform
2025
·
Max Uhlmann
, Milosz Krysik
, et al.
·
IEEE Transactions on Circuits and Systems I Regular Papers
·
4
Field- and Temperature-Induced Drift in Multi-Level Al-Doped HfO 2 RRAM
2026
·
Andrea Baroni
, Jianan Wen
, et al.
·
IEEE Transactions on Device and Materials Reliability
·
1
Physics-based RRAM compact model for multilevel programming across multiple timescales
2026
·
Tommaso Zanotti
, Tommaso Rizzi
, et al.
·
Journal of Semiconductors
·
1
Hardware validation of 130nm CMOS-integrated RRAM for accelerating vector-matrix multiplication
2026
·
Ramarajan Thileeban
, Max Uhlmann
, et al.
·
Microelectronic Engineering
Enabling Quantum‐Compatible Nonvolatile Memory: Cryogenic Evaluation of 1T1R HfO 2 ‐Based RRAM From 300 to 1.5 K
2026
·
Emilio Pérez‐Bosch Quesada
, Alberto Mistroni
, et al.
·
Advanced Electronic Materials
Monolithic Photonic BiCMOS Technology with 400-GHz SiGe-HBTs and Germanium-Fin Photodiodes
2026
·
S. Lischke
, B. Heinemann
, et al.
·
IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)
Analysis of the Behavior of a Memristive Device Within a One-Transistor-One-Resistor Structure
2026
·
Nadine Dersch
, Tommaso Rizzi
, et al.
·
International Conference Mixed Design of Integrated Circuits and Systems
Wafer-Scale Variability and Endurance Analysis of $\text{HfO}_{2}$ and Al-Doped $\text{HfO}_{2}$ 1T-1R RRAM
2026
·
Ramarajan Thileeban
, Eduardo Pérez
, et al.
·
International Conference on Smart and Sustainable Technologies (SpliTech)
Towards analog resistive switching by using multi-layered RRAM devices based on HfO2, Al2O3, TiO2 materials
2026
·
Keerthi Dorai Swamy Reddy
, Eduardo Pérez
, et al.
·
SSRN Electronic Journal
Cryogenic Characterization of HfO2-Based RRAM: Exploring Multilevel Switching from 300 K to 1.5 K for Neuromorphic Quantum Computing
2025
·
Emilio Perez-Bosch Quesada
, Alberto Mistroni
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
Impact of the Series Resistance on Switching Characteristics of 1T1R HfO2-based RRAM Devices
2025
·
Eduardo Perez
, David Maldonado
, et al.
·
Spanish Conference on Electron Devices
Effects of the compliance current on the switching of HfO2 and Al:HfO2 memristive devices: characterization and modeling
2025
·
D. Maldonado
, K. Dorai Swamy Reddy
, et al.
·
Spanish Conference on Electron Devices
Impact of Transistor Dimensions on the Performance of Multi-Level Programming Algorithms in 1T1R RRAM Devices
2025
·
Eduardo Pérez
, Andrea Baroni
, et al.
·
SSRN Electronic Journal
Impact of Transistor Dimensions on the Performance of Multi-Level Programming Algorithms in 1T1R RRAM Devices
2025
·
Eduardo Pérez
, Andrea Baroni
, et al.
·
SSRN Electronic Journal
Effect of the Temperature on the Performance and Dynamic Behavior of HfO2-Based Rram Devices
2024
·
Guillermo Vinuesa
, Hector Garcia
, et al.
·
ECS Meeting Abstracts
(Invited) ALD and MLD of Functional Thin-Film Coatings for Enhanced Performance in Li-Ion and Li-Metal Solid-State Batteries
2019
·
Philippe M. Vereecken
, Knut Bjarne Gandrud
, et al.
·
ECS Meeting Abstracts
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Works count:
25
Citation count:
89
H-index:
6
I10-index:
2
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