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Author

Maria Porrini

Observed names: M Porrini, M. Porrini, Porrini Maria
Institution: SunEdison (Italy)
ORCID: 0000-0003-3136-2365
Observed ORCID: 0000-0003-3136-2365
OpenAlex ID: A5039451120
Shallow thermal donors in nitrogen-doped silicon
2001 · V. V. Voronkov, M. Porrini, et al. · Journal of Applied Physics · 47
Behavior of volatile dopants (P, Sb) in Czochralski silicon growth
2016 · M. Porrini, R. Scala, et al. · Journal of Crystal Growth · 19
Minority carrier lifetime of p-type silicon containing oxygen precipitates: influence of injection level and precipitate size/density
2000 · M Porrini, P Tessariol · Materials Science and Engineering B · 19
Infrared characterization of oxygen precipitates in silicon wafers with different concentrations of interstitial oxygen
2000 · A Borghesi, A Sassella, et al. · Materials Science and Engineering B · 17
Computer simulation of Czochralski silicon thermal history and its effect on bulk stacking fault nuclei generation
1993 · A. Virzi, M. Porrini · Materials Science and Engineering B · 15
Investigation of Czochralski Silicon Grown with Different Interstitial Oxygen Concentrations and Point Defect Populations
2001 · S. Sama, M. Porrini, et al. · Journal of The Electrochemical Society · 14
Void properties in silicon heavily doped with arsenic and phosphorus
2012 · Vladimir Voronkov, Robert Falster, et al. · physica status solidi (a) · 13
The effect of carbon and antimony on grown-in microdefects in Czochralski silicon crystals
2006 · M. Porrini, V.V. Voronkov, et al. · Materials Science and Engineering B · 13
Measurement of boron and phosphorus concentration in silicon by low-temperature FTIR spectroscopy
2004 · M. Porrini, M.G. Pretto, et al. · Applied Physics A · 13
The accuracy of the standard resistivity–concentration conversion practice estimated by measuring the segregation coefficient of boron and phosphorous in Cz‐Si
2010 · Armando Giannattasio, Andrea Giaquinta, et al. · physica status solidi (a) · 10
Growth and characterization of heavily doped silicon crystals
2011 · R. Scala, M. Porrini, et al. · Crystal Research and Technology · 9
Impact of heavy doping with donors on CZ silicon properties
2014 · M. Porrini, J. Duchini, et al. · Crystal Research and Technology · 7
Influence of different growth and nucleation times on optical spectra of precipitated oxygen in silicon
2000 · A Borghesi, A Sassella, et al. · Materials Science and Engineering B · 7
Influence of Czochralski silicon crystal growth on wafer quality: an extensive investigation using traditional and new characterization techniques
2000 · M Porrini, P Collareta, et al. · Materials Science and Engineering B · 6
Impact of antimony doping on microdefect formation in Czochralski grown silicon crystals
2005 · M. Porrini · Crystal Research and Technology · 5
Czochralski Silicon
2001 · M. Porrini · Elsevier eBooks · 5
Thermal history simulation of Czochralski silicon crystals and its application to the study of defects formation during crystal growth
2000 · P Hopfgartner, P Collareta, et al. · Materials Science and Engineering B · 5
Oxygen Precipitation in Highly Doped Silicon Substrates
2019 · M. Porrini, V. V. Voronkov, et al. · ECS Journal of Solid State Science and Technology · 4
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Measurement of nitrogen in Czochralski silicon by means of infrared spectroscopy
2003 · M. Porrini, M.G. Pretto, et al. · Materials Science and Engineering B · 4
Evaluation of the precipitate contribution to the infrared absorption in interstitial oxygen measurements in silicon
2001 · A. Sassella, A. Borghesi, et al. · Applied Physics Letters · 4
Influence of thermal history during Czochralski silicon crystal growth on OISF nuclei formation
1996 · M. Porrini, P. Rossetto · Materials Science and Engineering B · 4
Impact of arsenic and phosphorus concentration on oxygen content in heavily doped silicon single crystal
2020 · Roberto Scala, Maria Porrini, et al. · Journal of Crystal Growth · 3
(Invited) Oxygen Precipitation in Highly Doped Silicon Substrates
2018 · Maria Porrini, Vladimir Voronkov, et al. · ECS Transactions · 3
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Improved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR
2005 · M. Porrini, Ivo Crössmann, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 3
Non-destructive diagnostic techniques for oxygen precipitates in Czochralski silicon
2001 · A. Bazzali, G. Borionetti, et al. · Materials Science in Semiconductor Processing · 3
Works count: 39
Citation count: 263
H-index: 10
I10-index: 10
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