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Mathias Kaschel

Observed names: Kaschel, Mathias, M. Kaschel
ORCID: 0000-0003-4534-8943
Observed ORCID: 0000-0003-4534-8943
OpenAlex ID: A5039706640
Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy
2011 · J. Werner, M. Oehme, et al. · Applied Physics Letters · 186
GeSn p-i-n detectors integrated on Si with up to 4% Sn
2012 · M. Oehme, M. Schmid, et al. · Applied Physics Letters · 185
Ge-on-Si p-i-n Photodiodes With a 3-dB Bandwidth of 49 GHz
2009 · S. Klinger, M. Berroth, et al. · IEEE Photonics Technology Letters · 125
GeSn-on-Si normal incidence photodetectors with bandwidths more than 40 GHz
2014 · Michael Oehme, Konrad Kostecki, et al. · Optics Express · 108
Room-Temperature Electroluminescence From GeSn Light-Emitting Pin Diodes on Si
2011 · M. Oehme, J. Werner, et al. · IEEE Photonics Technology Letters · 96
GeSn Heterojunction LEDs on Si Substrates
2014 · Michael Oehme, Konrad Kostecki, et al. · IEEE Photonics Technology Letters · 95
Direct bandgap narrowing in Ge LED’s on Si substrates
2013 · Michael Oehme, Martin Gollhofer, et al. · Optics Express · 77
Germanium waveguide photodetectors integrated on silicon with MBE
2008 · M. Oehme, J. Werner, et al. · Thin Solid Films · 72
Ultra-Efficient Silicon-on-Insulator Grating Couplers With Backside Metal Mirrors
2019 · Niklas Hoppe, Wissem Sfar Zaoui, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 49
Design of an Integrated Dual-Mode Interferometer on 250 nm Silicon-on-Insulator
2016 · Niklas Hoppe, Thomas Fohn, et al. · IEEE Journal of Selected Topics in Quantum Electronics · 41
Franz–Keldysh effect of germanium-on-silicon p–i–n diodes within a wide temperature range
2012 · M. Schmid, M. Kaschel, et al. · Thin Solid Films · 37
Germanium on Silicon Photodetectors with Broad Spectral Range
2009 · M. Oehme, M. Kaschel, et al. · Journal of The Electrochemical Society · 33
Franz-Keldysh effect in GeSn pin photodetectors
2014 · M. Oehme, K. Kostecki, et al. · Applied Physics Letters · 32
Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010)
2010 · Michael Oehme, Marko Sarlija, et al. · IEEE Transactions on Electron Devices · 24
Si Esaki diodes with high peak to valley current ratios
2009 · M. Oehme, D. Hähnel, et al. · Applied Physics Letters · 23
Backside Illuminated “Ge-on-Si” NIR Camera
2021 · Michael Oehme, Mathias Kaschel, et al. · IEEE Sensors Journal · 22
Room-temperature electroluminescence from tensile strained double-heterojunction Germanium pin LEDs on Silicon substrates
2013 · Mathias Kaschel, Marc Schmid, et al. · Solid-State Electronics · 19
Integrated Optoelectronic Devices Using Lab‐On‐Fiber Technology
2022 · Armando Ricciardi, Michael Zimmer, et al. · Advanced Materials Technologies · 17
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Effect of heavy doping and strain on the electroluminescence of Ge-on-Si light emitting diodes
2013 · Marc Schmid, Michael Oehme, et al. · Thin Solid Films · 16
3D-printed facet-attached optical elements for beam shaping in optical phased arrays
2022 · Stefan Singer, Yilin Xu, et al. · Optics Express · 14
Achieving stable fiber coupling of quantum dot telecom C-band single-photons to an SOI photonic device
2021 · Stephanie Bauer, Dongze Wang, et al. · Applied Physics Letters · 13
Ge on Si p-i-n photodetectors with 40 GHz bandwidth
2008 · S. Klinger, W. Vogel, et al. · IEEE International Conference on Group IV Photonics (GFP) · 10
Spectral responsivity of fast Ge photodetectors on SOI
2009 · M. Kaschel, M. Oehme, et al. · Solid-State Electronics · 9
Nonlinear Loss and Damage Threshold in Silicon Photonic Waveguides: Modelling and Experimental Verification
2022 · Stefan Singer, Philipp Trocha, et al. · Conference on Lasers and Electro-Optics · 8
Franz-Keldysh effect in germanium p-i-n photodetectors on silicon
2010 · M. Schmid, M. Oehme, et al. · IEEE International Conference on Group IV Photonics (GFP) · 8
Works count: 60
Citation count: 1,375
H-index: 17
I10-index: 22
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