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Abdelmalek Douara

Observed names: A. Douara, Abdelmalek DOUARA, Abdelmalek Douara Douara, Douara Abdelmalek, Douara, Abdelmalek, douara, abdelmalek
ORCID: 0009-0000-4048-8301
Observed ORCIDs: 0009-0000-4048-8301, 0009-0006-1086-201X
OpenAlex ID: A5040542712
Optimal estimation of Schottky diode parameters using a novel optimization algorithm: Equilibrium optimizer
2020 · Abdelaziz Rabehi, Bachir Nail, et al. · Superlattices and Microstructures · 43
Impact of AlN Buffer Layer Thickness on Electronic and Electrical Characteristics of In0.17Al0.83N/GaN High-Electron-Mobility Transistor
2024 · Abdelmalek Douara, Abdelaziz Rabehi, et al. · Physics of the Solid State · 40
Optimal Estimation of Schottky Diode Parameters Using Advanced Swarm Intelligence Algorithms
2020 · A. Rabehi, B. Nail, et al. · Semiconductors · 20
A comparative study of Schottky barrier heights and charge transport mechanisms in 3C, 4H, and 6H silicon carbide polytypes
2024 · Fayssal Mekaret, Abdelaziz Rabehi, et al. · AIP Advances · 18
Simulation-based optimization of barrier and spacer layers in InAlN/GaN HEMTs for improved 2DEG density
2024 · Abdelmalek Douara, Abdelaziz Rabehi, et al. · Micro and Nanostructures · 18
Current–Voltage, Capacitance–Voltage–Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode
2021 · A. Rabehi, B. Akkal, et al. · Semiconductors · 18
Frequency Dependent Capacitance and Conductance–Voltage Characteristics of Nitride GaAs Schottky Diode
2021 · A. Ziane, M. Amrani, et al. · Semiconductors · 17
Optimization of two‐dimensional electron gas characteristics of AlGaN/GaN high electron mobility transistors
2018 · Abdelmalek Douara, Bouaza Djellouli, et al. · International Journal of Numerical Modelling Electronic Networks Devices and Fields · 15
Impact of AlN interlayer on the electronic and I-V characteristics of In0.17Al0.83N/GaN HEMTs devices
2023 · Abdelmalek Douara, Abdelaziz Rabehi, et al. · Revista Mexicana de Física · 14
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Improved electrical characteristics of AlxGa1−xN/GaN High Electron Mobility Transistor by effect of physical and geometrical parameters
2023 · Abdelmalek Douara, Abdelaziz Rabehi, et al. · Revista Mexicana de Física · 13
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Design and Implementation of a Medical TeleMonitoring System based on IoT
2022 · M. Hamdani, M. Youcefi, et al. · Engineering Technology & Applied Science Research · 12
Numerical Investigation of G–V Measurements of metal – A Nitride GaAs junction
2024 · A. Ziane, Abdelaziz Rabehi, et al. · Revista Mexicana de Física · 11
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Accurate parameter estimation of Au/GaN/GaAs schottky diode model using grey wolf optimization
2024 · Abdelaziz Rabehi, Abdelmalek Douara, et al. · Revista Mexicana de Física · 11
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I-V Characteristics Model for AlGaN / GaN HEMTs Using Tcad-Silvaco
2014 · Abdelmalek Douara, Bouaza Djellouli, et al. · Journal of New Technology and Materials · 10
Impact of Grain Boundaries on The Electrical Characteristics and Breakdown Behavior of Polycrystalline Silicon Pin Diodes: A Simulation Study
2024 · Rabehi Abdelaziz, Douara Abdelmalek, et al. · ITEGAM- Journal of Engineering and Technology for Industrial Applications (ITEGAM-JETIA) · 8
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Modeling the Abnormal Behavior of the 6H-SiC Schottky Diode Using Lambert W Function
2022 · Abdelaziz Rabehi, Abdelhalim Rabehi, et al. · Journal of Nano- and Electronic Physics · 8
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2-D optimisation current–voltage characteristics in AlGaN/GaN HEMTs with influence of passivation layer
2019 · Abdelmalek Douara, Abdelaziz Rabehi, et al. · International Journal of Ambient Energy · 8
Enhanced Efficiency and Stability of n-i-p Planar Perovskite Solar Cells through PCBM Interface Passivation and an HTM-free layer: A SCAPS-1D Simulation Study
2025 · Fatima Maachou, Baya Zebentout, et al. · Semiconductors · 7
Enhanced Performance of Microstrip Antenna Arrays through Concave Modifications and Cut-Corner Techniques
2025 · Imad Eddine Tibermacine, Abdelmalek Douara, et al. · ITEGAM- Journal of Engineering and Technology for Industrial Applications (ITEGAM-JETIA) · 7
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Capacitance Models Of Algan/Gan High Electron Mobility Transistors
2016 · A. Douara, N. Kermas, et al. · Zenodo (CERN European Organization for Nuclear Research) · 3
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Current--Voltage, Capacitance--Voltage--Temperature, and DLTS Studies of Ni|6H-SiC Schottky Diode
2021 · A. Rabehi, B. Akkal, et al. · Физика и техника полупроводников · 2
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A theoretical study of Structural and electronic properties of Al0,125B0,125Ga0,75N; optoelectronic applications
2023 · Ahmed Memdouh Younsi, Abdelaziz Rabehi, et al. · All Sciences Abstracts · 1
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Separating Storage Effects from Response Construction: A Controlled Evaluation of a Database-Free JSON-Driven Web Architecture
2026 · Hamdani, Mostefa, Rabehi, Abdelaziz, et al. · Zenodo (CERN European Organization for Nuclear Research)
Adaptive Oscillatory Flow Direction Algorithm with Lambert W-Based Fitness Evaluation for Accurate Photovoltaic Parameter Extraction
2026 · Naas Dif, Ismail Dif, et al. · Energies
Investigating the Role of Dangling Bond DOS in Dark- and Light-Induced Conductivity of a-Si:H for Photovoltaic Applications
2026 · Ilias Sbahi, Baya Zebentout, et al. · Crystals
Works count: 34
Citation count: 304
H-index: 11
I10-index: 14
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