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Pengfei Wan

Observed name: Wan, Pengfei
ORCID: 0000-0003-0140-4990
Observed ORCID: 0000-0003-0140-4990
OpenAlex ID: A5040567040
Effect of Hydrogen on Radiation-Induced Displacement Damage in AlGaN/GaN HEMTs
2021 · Pengfei Wan, Jianqun Yang, et al. · IEEE Transactions on Nuclear Science · 35
Effects of Ionization and Displacement Damage in AlGaN/GaN HEMT Devices Caused by Various Heavy Ions
2021 · Pengfei Wan, Jianqun Yang, et al. · IEEE Transactions on Nuclear Science · 32
The Study of Displacement Damage in AlGaN/GaN High Electron Mobility Transistors Based on Experiment and Simulation Method
2022 · Pengfei Wan, Jianqun Yang, et al. · IEEE Transactions on Nuclear Science · 24
The Effect of Ionization Damage on Displacement Damage in AlGaN/GaN HEMTs
2022 · Pengfei Wan, Jianqun Yang, et al. · IEEE Transactions on Nuclear Science · 17
Analysis of radiation defects in gallium nitride using deep level transient spectra and first principles methods
2023 · Hao Jiang, Pengfei Wan, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 8
Investigation of proton irradiation induced EC-0.9 eV traps in AlGaN/GaN high electron mobility transistors
2022 · Pengfei Wan, Weiqi Li, et al. · Applied Physics Letters · 8
Location identify of EC-0.9 eV trap in AlGaN/GaN high electron mobility transistors
2022 · Pengfei Wan, Jianqun Yang, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 6
Physics-Constrained Neural Network-Based Compact Modeling of Displacement Damage for AlGaN/GaN HEMTs
2025 · Yuanbo Jiao, Zhongli Liu, et al. · IEEE Transactions on Nuclear Science · 5
LiveAct: Towards Real-Time Multi-Agent World Models with Heterogeneous Action Interfaces
2026 · Wang, Xinyu, Shi, Huafeng, et al. · arXiv (Cornell University) · 1
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Gnomon4D: Learning Where and When to Focus for Geometric Motion-Grounded World-Action Modeling
2026 · Dang, Lingwei, Zhou, Yan, et al. · arXiv (Cornell University)
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All-diamond detector with negligible degradation after ultrahigh-dose heavy-ion irradiation
2026 · Zhangcheng Liu, Yan Zhang, et al. · Applied Physics Letters
RVG-Bench: A Benchmark for Reasoning-Driven Audio-Visual Temporal Grounding
2026 · Feng, Yue, Xu, Boshen, et al. · arXiv (Cornell University)
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TrajCFG: Token-Wise Classifier-Free Guidance via Denoising Trajectory Feedback
2026 · Liu, Jingyu, Jiang, Hao, et al. · arXiv (Cornell University)
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DiffusionART: Efficient, Stable and Scalable Reinforcement of Diffusion Models
2026 · Wan, Zhenglin, Chen, Jiayu, et al. · arXiv (Cornell University)
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Synergistic effects of ionization and displacement damage in GaN HEMTs
2026 · Pengfei Wan, Zhaofeng Zhen, et al. · Microelectronics Reliability
γ-ray induced improvement in radiation tolerance of heterogeneously integrated GaN BJT at the base–emitter spacing region
2026 · Junfeng Yu, Shijie Wang, et al. · Applied Physics Letters
Different Single-Event Burnout Behavior in p-GaN HEMTs Under Zero and Negative Gate Bias
2026 · Xiangjie Cao, Fengkai Liu, et al. · IEEE Transactions on Nuclear Science
Single-Event Burnout Effect of Split-Gate-Trench MOSFET in Different Ion Angles
2026 · Shuo Liu, Lei Wu, et al. · IEEE Transactions on Nuclear Science
Comparison of Displacement Damage in 4H-SiC Schottky Barrier Diodes Irradiated by 1 MeV Electrons and 3 MeV Protons
2026 · Xueqiang Yu, Xiaodong Xu, et al. · IEEE Transactions on Nuclear Science
Temperature-Dependent Degradation and Failure of Split-Gate Trench MOSFETs Under Gate Overstress
2026 · Shuo Liu, Lei Wu, et al. · IEEE Transactions on Device and Materials Reliability
Investigation of Different Compact Modeling Methods for AlGaN/GaN HEMTs Under Radiation Environment
2025 · Yuanbo Jiao, Zhongli Liu, et al. · IEEE Transactions on Nuclear Science
Works count: 21
Citation count: 136
H-index: 6
I10-index: 4
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