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Author

Klaus Böttcher

Observed names: K Böttcher, K. Böttcher
Observed institutions: University of Nottingham, University of Potsdam, Wacker Group (Germany), Forschungsverbund Berlin, Institute for Materials Research, Tohoku University, Leibniz Institute for Crystal Growth
ORCID: 0000-0001-7045-8429
Observed ORCID: 0000-0001-7045-8429
OpenAlex ID: A5040679216
Numerical Modelling of the Czochralski Growth of β-Ga2O3
2017 · Wolfram Miller, Klaus Böttcher, et al. · Crystals · 71
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Zinc selenide single crystal growth by chemical transport reactions
1995 · K. Böttcher, H. Hartmann · Journal of Crystal Growth · 38
Solid solutions of lithium niobate and lithium tantalate: crystal growth and the ferroelectric transition
2023 · Umar Bashir, Klaus Böttcher, et al. · Ferroelectrics · 31
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Growth of bulk ZnSe crystals — recent developments
1996 · D. Siche, H. Hartmann, et al. · physica status solidi (b) · 26
Development and Optimization of VGF-GaAs Crystal Growth Process Using Data Mining and Machine Learning Techniques
2021 · Natasha Dropka, Klaus Böttcher, et al. · Crystals · 23
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Silicon Floating Zone Process: Numerical Modeling of RF Field, Heat Transfer, Thermal Stress, and Experimental Proof for 4 Inch Crystals
1995 · Helge Riemann, Anke Lüdge, et al. · Journal of The Electrochemical Society · 23
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Global temperature field simulation of the vapour pressure controlled Czochralski (VCZ) growth of 3″–4″ gallium arsenide crystals
1999 · K Böttcher, P Rudolph, et al. · Journal of Crystal Growth · 21
Influence of convection on zinc selenide single crystal growth by chemical vapour transport
1996 · K. Böttcher, H. Hartmann, et al. · Journal of Crystal Growth · 16
Equipment for Low Temperature Steady-State Growth of Silicon from Metallic Solutions
2008 · Thomas Teubner, Robert Heimburger, et al. · Crystal Growth & Design · 15
Three-dimensional thermal stresses in on-axis grown SiC crystals
2005 · Klaus Böttcher, K. Andrew Cliffe · Journal of Crystal Growth · 15
Numerical solution of a multi-component species transport problem combining diffusion and fluid flow as engineering benchmark
2009 · Klaus Böttcher · International Journal of Heat and Mass Transfer · 14
Computational study on the CVT of the ZnSe–I2 material system
2001 · K. Böttcher, H. Hartmann, et al. · Journal of Crystal Growth · 14
Numerical solution of multi-component species transport in gases at any total number of components
2012 · Andreas Spille-Kohoff, Enrico Preuß, et al. · International Journal of Heat and Mass Transfer · 13
Growth of GaN crystals from chlorine-free gas phase
2007 · D. Siche, H.-J. Rost, et al. · Journal of Crystal Growth · 10
Numerical Modeling of Heat Transfer and Thermal Stress at the Czochralski Growth of Neodymium Scandate Single Crystals
2020 · Klaus Böttcher, Wolfram Miller, et al. · Crystal Research and Technology · 9
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In situ kinetic investigations during aluminium nitride purification and crystal growth processes by capillary coupled mass spectrometry
2011 · C. Guguschev, E. Moukhina, et al. · Thermochimica Acta · 8
Melt Convection in a Czochralski Crucible
1999 · W. Miller, U. Rehse, et al. · Crystal Research and Technology · 8
Three-dimensional resolved shear stresses in off-axis grown SiC single crystals
2007 · Klaus Böttcher, K. Andrew Cliffe · Journal of Crystal Growth · 7
Computational study on the SiC sublimation growth
2002 · K. Böttcher, D. Schulz · Journal of Crystal Growth · 7
Data‐Driven Cz–Si Scale‐Up under Conditions of Partial Similarity
2024 · Natasha Dropka, Klaus Böttcher, et al. · Crystal Research and Technology · 6
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Computational Simulations of the Lateral-Photovoltage-Scanning-Method
2018 · S Kayser, A Lüdge, et al. · IOP Conference Series Materials Science and Engineering · 6
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Crystal growth of zinc selenide under μg-conditions
2002 · D. Siche, K. Böttcher, et al. · Journal of Crystal Growth · 5
Heat and Mass Transport Computation at the Sublimation Growth of SiC
2001 · K. Böttcher · Crystal Research and Technology · 5
Influence of melt convection on the interface during Czochralski crystal growth
2000 · W. Miller, U. Rehse, et al. · Solid-State Electronics · 5
Numerical Study of Flow and Temperature Patterns During the Growth of GaPO 4 Crystals Using the Lattice-Boltzmann Method
1998 · Wolfram Miller, Klaus Böttcher · International Journal of Modern Physics C · 5
Works count: 43
Citation count: 432
H-index: 13
I10-index: 14
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