Author

Johan J. T. M. Donkers

Observed names: Donkers J J T M, Donkers, J. J. T. M., J. Donkers, J. J. T. M Donkers, J. J. T. M. Donkers, J.J.T.M Donkers, J.J.T.M. Donkers, Johan Donkers, Johan J.T.M. Donkers

Institution: NXP (Germany)

Observed institutions: NXP (Netherlands), IMEC, Philips (Netherlands), NXP (Germany), NXP (Belgium), Philips (Belgium), Signify (Netherlands)

OpenAlex ID: A5041875981

Anti-phase domains and magnetism in epitaxial magnetite layers

1999 · T. Hibma, F. C. Voogt, et al. · Journal of Applied Physics · 138

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High-frequency permeability of soft-magnetic Fe–Hf–O films with high resistivity

1998 · Jeroen Huijbregtse, Fred Roozeboom, et al. · Journal of Applied Physics · 66

QUBiC4G: a f/sub T//f/sub max/ = 70/100 GHz 0.25 μm low power SiGe-BiCMOS production technology with high quality passives for 12.5 Gb/s optical networking and emerging wireless applications up to 20 GHz

2003 · P. Deixler, R. Colclaser, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 62

The application of polypyrrole as counterelectrode in electrolytic capacitors

1993 · L.H.M. Krings, E.E. Havinga, et al. · Synthetic Metals · 59

Metal film precision resistors: Resistive metal films and a new resistor concept

1998 · J.J. Van Den Broek, J.J.T.M. Donkers, et al. · Philips Journal of Research · 42

Nanocrystalline structure of WO3 thin films prepared by the sol-gel technique

1998 · O. Pyper, R. Schöllhorn, et al. · Materials Research Bulletin · 36

Control of Buffer-Induced Current Collapse in AlGaN/GaN HEMTs Using SiNx Deposition

2017 · William M. Waller, Mark Gajda, et al. · IEEE Transactions on Electron Devices · 35

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Impact of Silicon Nitride Stoichiometry on the Effectiveness of AlGaN/GaN HEMT Field Plates

2017 · William M. Waller, Mark Gajda, et al. · IEEE Transactions on Electron Devices · 35

Impact of the backside potential on the current collapse of GaN SBDs and HEMTs

2015 · J. A. Croon, G. A. M. Hurkx, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 34

Sheet resistance under Ohmic contacts to AlGaN/GaN heterostructures

2014 · M. Hajłasz, J. J. T. M. Donkers, et al. · Applied Physics Letters · 31

Inverted spin valves for magnetic heads and sensors

1997 · K.-M. H. Lenssen, A. E. M. De Veirman, et al. · Journal of Applied Physics · 31

Compositional, structural, and electrical characterization of plasma oxidized thin aluminum layers for spin-tunnel junctions

2000 · M. F. Gillies, A. E. T. Kuiper, et al. · Journal of Applied Physics · 27

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RF reliability of short channel NMOS devices

2009 · D. Stephens, T. Vanhoucke, et al. · Digest of papers - IEEE Radio Frequency Integrated Circuits Symposium · 23

A Novel Fully Self-Aligned SiGe:C HBT Architecture Featuring a Single-Step Epitaxial Collector-Base Process

2007 · J.J.T.M. Donkers, T. Vanhoucke, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 23

Explorations for high performance SiGe-heterojunction bipolar transistor integration

2002 · P. Deixler, H.G.A. Huizing, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 17

Metal emitter SiGe:C HBTs

2005 · J.J.T.M. Donkers, T. Vanhoucke, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 15

Soft-magnetic fluxguide materials

1998 · F. Roozeboom, P.J.H. Bloemen, et al. · Philips Journal of Research · 15

SiGe:C profile optimization for low noise performance

2011 · P.H.C. Magnee, R. van Dalen, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 12

Characterization of recessed Ohmic contacts to AlGaN/GaN

2015 · M. Hajlasz, J. J. T. M. Donkers, et al. · IEEE International Conference on Microelectronic Test Structures (ICMTS) · 11

MBE-grown spin valves

1996 · K.-M.H. Lenssen, J.C.S. Kools, et al. · Journal of Magnetism and Magnetic Materials · 11

A Novel Isolation Scheme featuring Cavities in the Collector for a High-Speed 0.13μm SiGe:C BiCMOS Technology

2007 · L.J. Choi, S. Van Huylenbroeck, et al. · IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF) · 10

Transmission electron microscopy specimen holder for simultaneous in situ heating and electrical resistance measurements

2004 · M. A. Verheijen, J. J. T. M. Donkers, et al. · Review of Scientific Instruments · 10

Barrier Height Variation in Ni-Based AlGaN/GaN Schottky Diodes

2017 · Marcin Hajlasz, Johan J. T. M. Donkers, et al. · IEEE Transactions on Electron Devices · 6

Quantitative characterization of the trapped charge profile in GaN HEMTs by sense nodes in the drain-extension region

2016 · J. A. Croon, G. A. M. Hurkx, et al. · IEEE International Symposium on Power Semiconductor Devices and ICs/Proceedings of the International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices & ICs/Proceedings of the ... International Symposium on Power Semiconductor Devices and ICs · 6

Layout and spacer optimization for high-frequency low-noise performance in HBT's

2010 · T. Vanhoucke, J.J.T.M. Donkers, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 5

Works count: 42

Citation count: 789

H-index: 15

I10-index: 22