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Tamer San
Observed name:
T. San
Institution:
Texas Instruments (United States)
Observed institutions:
The University of Texas at Dallas,
IMEC,
Texas Instruments (United States)
OpenAlex ID:
A5043187151
Nonvolatile Memories Based on Graphene and Related 2D Materials
2019
·
Simone Bertolazzi
, Paolo Bondavalli
, et al.
·
Advanced Materials
·
320
PDF
Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to stress-induced crystallization at low thermal budget
2017
·
Si Joon Kim
, Dushyant Narayan
, et al.
·
Applied Physics Letters
·
313
Effect of film thickness on the ferroelectric and dielectric properties of low-temperature (400 °C) Hf0.5Zr0.5O2 films
2018
·
Si Joon Kim
, Jaidah Mohan
, et al.
·
Applied Physics Letters
·
172
Low-voltage operation and high endurance of 5-nm ferroelectric Hf0.5Zr0.5O2 capacitors
2018
·
Si Joon Kim
, Jaidah Mohan
, et al.
·
Applied Physics Letters
·
88
Flash EPROM disturb mechanisms
1994
·
C. Dunn
, C. Kaya
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
59
Effect of hydrogen derived from oxygen source on low-temperature ferroelectric TiN/Hf0.5Zr0.5O2/TiN capacitors
2019
·
Si Joon Kim
, Jaidah Mohan
, et al.
·
Applied Physics Letters
·
39
Stress-Induced Crystallization of Thin Hf1–XZrXO2 Films: The Origin of Enhanced Energy Density with Minimized Energy Loss for Lead-Free Electrostatic Energy Storage Applications
2019
·
Si Joon Kim
, Jaidah Mohan
, et al.
·
ACS Applied Materials & Interfaces
·
33
Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Capacitors with Low-Voltage Operation and High Reliability for Next-Generation FRAM Applications
2018
·
Si Joon Kim
, Jaidah Mohan
, et al.
·
IEEE International Memory Workshop (IMW)
·
30
Low-power ferroelectric random access memory embedded in 180nm analog friendly CMOS technology
2013
·
K. R. Udayakumar
, T. San
, et al.
·
IEEE International Memory Workshop (IMW)
·
22
Nanotechnology Conference and Trade Show
2009
·
Shyam Surthi
, Xun Gong
, et al.
·
17
Radiation Evaluation of Ferroelectric Random Access Memory Embedded in 180nm CMOS Technology
2015
·
B. A. Dahl
, J. Cruz-Colon
, et al.
·
IEEE Radiation Effects Data Workshop (REDW)
·
14
High Temperature Data Retention of Ferroelectric Memory on 130nm and 180nm CMOS
2016
·
J.A. Rodriguez
, C. Zhou
, et al.
·
IEEE International Memory Workshop (IMW)
·
13
Low Temperature (400°c) Ferroelectric Hf0.5Zr0.5O2 Capacitors for Next-Generation FRAM Applications
2017
·
Si Joon Kim
, Dushyant Narayan
, et al.
·
IEEE International Memory Workshop (IMW)
·
12
Treshold voltage modulation in FinFET devices through Arsenic Ion Implantation into TiN/HfSiON gate stack
2007
·
L. Witters
, N.J. Son
, et al.
·
IEEE International SOI Conference (SOI)
·
9
180nm FRAM reliability demonstration with ten years data retention at 125°C
2013
·
J. Rodriguez
, J. Rodriguez-Latorre
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
6
Scaling reliability and modeling of ferroelectric capacitors
2010
·
Antonio G. Acosta
, John Rodriguez
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
2
MUGFET - alternative transistor architecture for 32 nm CMOS generation
2006
·
M. Jurczak
, N. Collaert
, et al.
·
International Workshop on Junction Technology
·
1
C4L-E Joint Session on Technology and Readout Circuits for Sensors
2007
·
B.J. Hosticka
, Fraunhofer Ims
, et al.
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Works count:
18
Citation count:
1,150
H-index:
12
I10-index:
13
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