Low-power ferroelectric random access memory embedded in 180nm analog friendly CMOS technology
Year: 2013
Type: conference-paper
Authors: K. R. Udayakumar, T. San, J. Rodriguez, S. Chevacharoenkul, D. Frystak, J. Rodriguez-Latorre, C. Zhou, M. Ball, P. Ndai, S. Madan, H. McAdams, S. Summerfelt, T. Moise
Institution: Texas Instruments (United States)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W1978005508