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Sopa Chevacharoenkul

Controlled ion beam sputter deposition of W/Cu/W layered films for microelectronic applications
1991 · O. Auciello, S. Chevacharoenkul, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 45
Steady-state creep of hot-pressed SiC whisker-reinforced silicon nitride
1990 · R.D. Nixon, D.A. Koester, et al. · Composites Science and Technology · 37
Monocrystal elastic constants of NbC
1986 · H. M. Ledbetter, S. Chevacharoenkul, et al. · Journal of Applied Physics · 36
Fabrication and Performance of Integrated Fluxgate for Current Sensing Applications
2017 · Dok Won Lee, Mona Eissa, et al. · IEEE Transactions on Magnetics · 24
Low-power ferroelectric random access memory embedded in 180nm analog friendly CMOS technology
2013 · K. R. Udayakumar, T. San, et al. · IEEE International Memory Workshop (IMW) · 22
In situ strain measurements during the formation of palladium silicide films
1993 · P. P. Buaud, F. M. d’Heurle, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 22
TEM Sample Preparation Using A Focused Ion Beam and A Probe Manipulator
1996 · L.R. Herlinger, S. Chevacharoenkul, et al. · Proceedings - International Symposium for Testing and Failure Analysis · 21
Laser ablation deposition of titanium nitride films on silicon substrates at room temperature
1989 · O Auciello, T Barnes, et al. · Thin Solid Films · 19
Junction Formation and Poly‐Si Doping for Scaled Sub‐Micron CMOS Technology
1992 · C. M. Osburn, S. Chevacharoenkul, et al. · Journal of The Electrochemical Society · 14
Recrystallization of silicon amorphized by carbon implantation
1991 · Sopa Chevacharoenkul, John R. Ilzhoefer, et al. · Applied Physics Letters · 13
Dislocation mechanisms, diffusional processes and creep behavior in NbCx
1989 · S. Chevacharoenkul, R.F. Davis · Acta Metallurgica · 13
A Microstructural Study of Phases in the Y-Ba-Cu-0 System
1987 · Angus I. Kingon, Sopa Chevacharoenkul, et al. · Advanced Ceramic Materials · 13
Deformation Behavior of SiC Whisker Reinforced Si3N4
1986 · R. D. Nixon, S. Chevacharoenkul, et al. · MRS Proceedings · 11
Diamond synthesis in graphite/nickel composite powders subjected to shock compression
1989 · I. Simonsen, S. Chevacharoenkul, et al. · Journal of Materials Science · 10
Space group and chemical analysis of Y2BaCuO5−x by convergent beam electron diffraction and x-ray energy-dispersive spectroscopy
1987 · John F. Mansfield, Sopa Chevacharoenkul, et al. · Applied Physics Letters · 10
The Occurrence and Behavior of Dislocations during Plastic Deformation of Selected Transition Metal and Silicon Carbides
1984 · R. F. Davis, C. H. Carter, et al. · Springer eBooks · 8
Steady-state creep behavior of hot isostatically pressed niobium carbide
1987 · R.D. Nixon, S. Chevacharoenkul, et al. · Materials Research Bulletin · 7
Spectroscopic differential reflectance as an analytical probe for microelectronic processing
1993 · T. M. Burns, E. A. Irene, et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 6
Heteroepitaxial Growih and Characterization of Titanium Films on Alpha (6H) Silicon Carbide
1991 · L.M. Spellman, R.C. Glass, et al. · MRS Proceedings · 6
Liquid silicide formation on the Si wafer free surface during Ni diffusion at 1200 °C
1992 · Jianxing Li, Woun-Suck Yang, et al. · Journal of Applied Physics · 5
Materials and device issues in the formation of sub-100-nm junctions
1993 · C.M. Osburn, S. Chevacharoenkul, et al. · Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms · 4
Electrical Characterization of Epitaxial Titanium Contacts to Alpha (6H) Silicone Carbide
1992 · L. M. Spellman, R. C. Glass, et al. · Springer proceedings in physics · 4
A Technique for Preparing “Two in One” Cross-Sectional TEM Specimens
1990 · Guang-Hwa M. Ma, Sopa Chevacharoenkul · MRS Proceedings · 4
Hot isostatic pressing of niobium carbide
1982 · S. Chevacharoenkul, R.F. Davis, et al. · Materials Science and Engineering · 4
The synthesis and layer growth of zinc silicon arsenide, ZnSiAs2, by chemical vapor deposition in an open flow system
1977 · J.E. Andrews, A.F. Schreiner, et al. · Materials Research Bulletin · 3
Works count: 28
Citation count: 365
H-index: 12
I10-index: 15
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