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J. Rodriguez-Latorre
Institution:
Texas Instruments (United States)
Observed institution:
Texas Instruments (United States)
OpenAlex ID:
A5033340296
Reliability of Ferroelectric Random Access memory embedded within 130nm CMOS
2010
·
J. Rodriguez
, K. Remack
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
63
Low-power ferroelectric random access memory embedded in 180nm analog friendly CMOS technology
2013
·
K. R. Udayakumar
, T. San
, et al.
·
IEEE International Memory Workshop (IMW)
·
22
Radiation Evaluation of Ferroelectric Random Access Memory Embedded in 180nm CMOS Technology
2015
·
B. A. Dahl
, J. Cruz-Colon
, et al.
·
IEEE Radiation Effects Data Workshop (REDW)
·
14
180nm FRAM reliability demonstration with ten years data retention at 125°C
2013
·
J. Rodriguez
, J. Rodriguez-Latorre
, et al.
·
IEEE International Reliability Physics Symposium proceedings
·
6
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Works count:
4
Citation count:
105
H-index:
4
I10-index:
3
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