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Wen-Jie Yu
Observed names:
W Yu,
W. J. Yu,
W. Yu,
W.J. Yu,
Wenjie Yu,
Wiley Yu
show all 6
Institution:
Stanford University
Observed institutions:
Forschungszentrum Jülich,
Chinese Academy of Sciences,
Jülich Aachen Research Alliance,
Shanghai Institute of Microsystem and Information Technology,
State Key Laboratory of Functional Materials for Informatics,
Stanford University
show all 6
ORCID:
0000-0001-5261-2728
Observed ORCID:
0000-0001-5261-2728
OpenAlex ID:
A5043626665
Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source
2012
·
Q.T. Zhao
, W.J. Yu
, et al.
·
Solid-State Electronics
·
32
High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate
2011
·
W. Yu
, B. Zhang
, et al.
·
Solid-State Electronics
·
21
Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices
2011
·
J. Marcelo Lopes
, Eylem Durğun Özben
, et al.
·
ECS Transactions
·
14
PDF
Improvement of Nickel-Stanogermanide Contact Properties by Platinum Interlayer
2018
·
Wei-Jun Wan
, Wei Ren
, et al.
·
Chinese Physics Letters
·
7
Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source
2011
·
Q. T. Zhao
, W. J. Yu
, et al.
·
European Solid-State Device Research Conference
·
6
Reaction of titanium-modulated nickel with germanium-tin under microwave and rapid thermal annealing
2021
·
Wei Liu
, Yun-Xia Ping
, et al.
·
Acta Physica Sinica
·
4
MOSFETs with high mobility channel materials and higher-k/metal gate stack
2010
·
W. Yu
, E. Durgun Ozben
, et al.
·
IEEE International Conference on Solid-State and Integrated Circuit Technology
·
4
Performance Enhancement of GaN Super-Lattice Castellated Field-Effect Transistors (SLCFETs) via Topside Integration of Near-Isotropic Polycrystalline Diamond
2025
·
Jeong-Kyu Kim
, Mohamadali Malakoutian
, et al.
·
IEEE Electron Device Letters
·
3
Investigation of Coulomb scattering on sSi/Si0.5Ge0.5/sSOI quantum-well p-MOSFETs
2016
·
Jiao Wen
, Qiang Liu
, et al.
·
Journal of Semiconductors
·
2
PDF
Electrical Characteristics of High Mobility Si/Si 0.5 Ge 0.5 /SOI Quantum-Well p-MOSFETs with a Gate Length of 100 nm and an Equivalent Oxide Thickness of 1.1 nm
2013
·
Zhi-Qiang Mu
, Wen-Jie Yu
, et al.
·
Chinese Physics Letters
·
1
High mobility Si/Si0.5Ge0.5/strained SOI p-MOSFET with HfO2 /TiN gate stack
2010
·
B. Zhang
, W. Yu
, et al.
·
IEEE International Conference on Solid-State and Integrated Circuit Technology
·
1
Impact of Al addition on the formation of Ni germanosilicide layers under different temperature annealing *
2017
·
Xiao-Ran Meng
, Yun-Xia Ping
, et al.
·
Chinese Physics B
Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and Their Integration as High-k Gate Dielectrics in MOSFET Devices
2011
·
J. Marcelo Lopes
, Eylem Durgun Ozben
, et al.
·
ECS Meeting Abstracts
PDF
High mobility Si-Ge channels and novel high-k materials for nanomosfets
2010
·
W Yu
, B Zhang
, et al.
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Works count:
14
Citation count:
95
H-index:
5
I10-index:
3
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