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Masafumi Yokoyama
Observed names:
M. Yokoyama,
Masafumi YOKOYAMA,
Yokoyama, Masafumi,
横山 正史,
横山,正文
Institution:
Sumitomo Chemical (Japan)
Observed institutions:
Sumitomo Chemical (Japan),
Fujitsu (Japan),
Japan Science and Technology Agency,
Nagoya University,
National Institute of Advanced Industrial Science and Technology,
The University of Tokyo
show all 6
ORCID:
0000-0001-5524-3868
Observed ORCID:
0000-0001-5524-3868
OpenAlex ID:
A5043797357
1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density
2012
·
R. Suzuki
, N. Taoka
, et al.
·
Applied Physics Letters
·
168
Zinc-blende-type MnAs nanoclusters embedded in GaAs
2005
·
M. Yokoyama
, H. Yamaguchi
, et al.
·
Journal of Applied Physics
·
107
III–V/Ge channel MOS device technologies in nano CMOS era
2015
·
Shinichi Takagi
, Rui Zhang
, et al.
·
Japanese Journal of Applied Physics
·
100
PDF
A 174 W high-efficiency GaN HEMT power amplifier for W-CDMA base station applications
2004
·
K. Joshin
, T. Kikkawa
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
100
Thin Body III–V-Semiconductor-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors on Si Fabricated Using Direct Wafer Bonding
2009
·
Masafumi Yokoyama
, Tetsuji Yasuda
, et al.
·
Applied Physics Express
·
82
PDF
High mobility CMOS technologies using III–V/Ge channels on Si platform
2013
·
S. Takagi
, S.-H. Kim
, et al.
·
Solid-State Electronics
·
72
An over 200-W output power GaN HEMT push-pull amplifier with high reliability
2004
·
T. Kikkawa
, T. Maniwa
, et al.
·
IEEE MTT-S International Microwave Symposium digest
·
72
Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers
2011
·
Masafumi Yokoyama
, Ryo Iida
, et al.
·
IEEE Electron Device Letters
·
67
High Performance Tri-Gate Extremely Thin-Body InAs-On-Insulator MOSFETs With High Short Channel Effect Immunity and $V_{\rm th}$ Tunability
2014
·
Sang-Hyeon Kim
, Masafumi Yokoyama
, et al.
·
IEEE Transactions on Electron Devices
·
65
III-V-semiconductor-on-insulator n-channel metal-insulator-semiconductor field-effect transistors with buried Al2O3 layers and sulfur passivation: Reduction in carrier scattering at the bottom interface
2010
·
Masafumi Yokoyama
, Tetsuji Yasuda
, et al.
·
Applied Physics Letters
·
65
Self-Aligned Metal Source/Drain InxGa1-xAs n-Metal–Oxide–Semiconductor Field-Effect Transistors Using Ni–InGaAs Alloy
2011
·
SangHyeon Kim
, Masafumi Yokoyama
, et al.
·
Applied Physics Express
·
64
PDF
Formation of III–V-on-insulator structures on Si by direct wafer bonding
2013
·
Masafumi Yokoyama
, Ryo Iida
, et al.
·
Semiconductor Science and Technology
·
53
PDF
High Ion/Ioff and low subthreshold slope planar-type InGaAs tunnel field effect transistors with Zn-diffused source junctions
2015
·
Munetaka Noguchi
, SangHyeon Kim
, et al.
·
Journal of Applied Physics
·
52
Reduction in interface state density of Al2O3/InGaAs metal-oxide-semiconductor interfaces by InGaAs surface nitridation
2012
·
Takuya Hoshii
, Sunghoon Lee
, et al.
·
Journal of Applied Physics
·
52
III-V/Ge MOS device technologies for low power integrated systems
2016
·
S. Takagi
, M. Noguchi
, et al.
·
Solid-State Electronics
·
50
PDF
Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation
2011
·
N. Taoka
, M. Yokoyama
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
50
MOS interface and channel engineering for high-mobility Ge/III-V CMOS
2012
·
S. Takagi
, R. Zhang
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
49
Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding
2010
·
M. Yokoyama
, R. Iida
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
49
Impact of atomic layer deposition temperature on HfO2/InGaAs metal-oxide-semiconductor interface properties
2012
·
Rena Suzuki
, Noriyuki Taoka
, et al.
·
Journal of Applied Physics
·
47
Sub-60-nm Extremely Thin Body ${\rm In}_{x}{\rm Ga}_{1-x}{\rm As}$-On-Insulator MOSFETs on Si With Ni-InGaAs Metal S/D and MOS Interface Buffer Engineering and Its Scalability
2013
·
Sanghyeon Kim
, Masafumi Yokoyama
, et al.
·
IEEE Transactions on Electron Devices
·
46
Semiconductor waveguide optical isolator based on nonreciprocal loss induced by ferromagnetic MnAs
2006
·
T. Amemiya
, H. Shimizu
, et al.
·
Applied Physics Letters
·
44
High-Performance InAs-On-Insulator n-MOSFETs With Ni-InGaAs S/D Realized by Contact Resistance Reduction Technology
2013
·
SangHyeon Kim
, Masafumi Yokoyama
, et al.
·
IEEE Transactions on Electron Devices
·
43
InGaAsP Photonic Wire Based Ultrasmall Arrayed Waveguide Grating Multiplexer on Si Wafer
2009
·
Mitsuru Takenaka
, Masafumi Yokoyama
, et al.
·
Applied Physics Express
·
43
Low-driving-current InGaAsP photonic-wire optical switches using III-V CMOS photonics platform
2012
·
Yuki Ikku
, Masafumi Yokoyama
, et al.
·
Optics Express
·
41
Ge/Si Heterojunction Tunnel Field-Effect Transistors and Their Post Metallization Annealing Effect
2014
·
Minsoo Kim
, Yuki K. Wakabayashi
, et al.
·
IEEE Transactions on Electron Devices
·
40
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Works count:
197
Citation count:
2,973
H-index:
31
I10-index:
80
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