Work

High mobility CMOS technologies using III–V/Ge channels on Si platform

Year: 2013

Type: article

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2013.04.020

Authors: S. Takagi, S.-H. Kim, M. Yokoyama, R. Zhang, N. Taoka, Y. Urabe, T. Yasuda, H. Yamada, O. Ichikawa, N. Fukuhara, M. Hata, M. Takenaka

Institutions: The University of Tokyo, National Institute of Advanced Industrial Science and Technology, Sumitomo Chemical (Japan)

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funders: Ministry of Education, Culture, Sports, Science and Technology, New Energy and Industrial Technology Development Organization, Japan Society for the Promotion of Science

Award: Understanding of carrier transport mechanism in Ge MOS interfaces and establishment of mobility enhancement technologies

OpenAlex ID: W2000828913

FWCI: 5.02

Cites: 43

Cited by: 72

Related to: 10