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M. Hata

Observed name: M Hata
Institution: Itochu (Japan)
OpenAlex ID: A5113621985
1-nm-capacitance-equivalent-thickness HfO2/Al2O3/InGaAs metal-oxide-semiconductor structure with low interface trap density and low gate leakage current density
2012 · R. Suzuki, N. Taoka, et al. · Applied Physics Letters · 168
High mobility CMOS technologies using III–V/Ge channels on Si platform
2013 · S. Takagi, S.-H. Kim, et al. · Solid-State Electronics · 72
Impact of Fermi level pinning inside conduction band on electron mobility of InxGa1−xAs MOSFETs and mobility enhancement by pinning modulation
2011 · N. Taoka, M. Yokoyama, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 50
Extremely-thin-body InGaAs-on-insulator MOSFETs on Si fabricated by direct wafer bonding
2010 · M. Yokoyama, R. Iida, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 49
Nitride passivation reduces interfacial traps in atomic-layer-deposited Al2O3/GaAs (001) metal-oxide-semiconductor capacitors using atmospheric metal-organic chemical vapor deposition
2014 · T. Aoki, N. Fukuhara, et al. · Applied Physics Letters · 34
Residual impurities in epitaxial layers grown by MOVPE
1988 · M. Hata, N. Fukuhara, et al. · Journal of Crystal Growth · 34
Enhancement technologies and physical understanding of electron mobility in III–V n-MOSFETs with strain and MOS interface buffer engineering
2011 · S. H. Kim, M. Yokoyama, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 30
Impact of InGaAs surface nitridation on interface properties of InGaAs metal-oxide-semiconductor capacitors using electron cyclotron resonance plasma sputtering SiO2
2010 · T. Hoshii, M. Yokoyama, et al. · Applied Physics Letters · 29
High performance sub-20-nm-channel-length extremely-thin body InAs-on-insulator tri-gate MOSFETs with high short channel effect immunity and Vth tunability
2013 · Sang Hyeon Kim, M. Yokoyama, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 26
Self-aligned metal source/drain InxGa1−xAs n-MOSFETs using Ni-InGaAs alloy
2010 · S.H. Kim, M. Yokoyama, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 26
The effects of oxygen impurity in TMA on AlGaAs layers grown by MOVPE
1992 · M. Hata, H. Takata, et al. · Journal of Crystal Growth · 26
Sub-60 nm deeply-scaled channel length extremely-thin body InxGa1−xAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D and MOS interface buffer engineering
2012 · S. H. Kim, M. Yokoyama, et al. · Symposium on VLSI Technology · 22
CMOS integration of InGaAs nMOSFETs and Ge pMOSFETs with self-align Ni-based metal S/D using direct wafer bonding
2011 · Masafumi Yokoyama, S. H. Kim, et al. · Symposium on VLSI Technology · 22
Impact of plasma post-nitridation on HfO2/Al2O3/SiGe gate stacks toward EOT scaling
2013 · J.-H. Han, R. Zhang, et al. · Microelectronic Engineering · 21
Impact of La2O3 interfacial layers on InGaAs metal-oxide-semiconductor interface properties in Al2O3/La2O3/InGaAs gate stacks deposited by atomic-layer-deposition
2015 · C.-Y. Chang, O. Ichikawa, et al. · Journal of Applied Physics · 20
Demonstration of InGaAs/Ge dual channel CMOS inverters with high electron and hole mobility using staked 3D integration
2013 · Toshifumi Irisawa, M. Oda, et al. · Symposium on VLSI Technology · 18
High mobility III–V-on-insulator MOSFETs on Si with ALD-Al2O3 BOX layers
2010 · M. Yokoyama, Y. Urabe, et al. · Symposium on VLSI Technology · 11
High performance extremely-thin body InAs-on-insulator MOSFETs on Si with Ni-InGaAs metal S/D by contact resistance reduction technology
2013 · S. H. Kim, Masafumi Yokoyama, et al. · Symposium on VLSI Technology · 10
High electron mobility triangular InGaAs-OI nMOSFETs with (111)B side surfaces formed by MOVPE growth on narrow fin structures
2013 · T. Irisawa, M. Oda, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 9
High performance extremely-thin body III-V-on-insulator MOSFETs on a Si substrate with Ni-InGaAs metal S/D and MOS interface buffer engineering
2011 · S. H. Kim, Masafumi Yokoyama, et al. · Symposium on VLSI Technology · 8
High mobility metal S/D III–V-On-Insulator MOSFETs on a Si substrate using direct wafer bonding
2006 · Masafumi Yokoyama, Tetsuji Yasuda, et al. · Symposium on VLSI Technology · 8
Ultrathin Body Germanium-on-Insulator (GeOI) Pseudo-MOSFETs Fabricated by Transfer of Epitaxial Ge Films on III-V Substrates
2014 · X. Yu, R. Zhang, et al. · ECS Solid State Letters · 7
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Impact of metal gate electrodes on electrical properties of InGaAs MOS gate stacks
2013 · C.-Y. Chang, M. Yokoyama, et al. · Microelectronic Engineering · 7
High mobility p-n junction-less InGaAs-OI tri-gate nMOSFETs with metal source/drain for ultra-low-power CMOS applications
2012 · T. Irisawa, M. Oda, et al. · IEEE International SOI Conference (SOI) · 7
High-resolution depth profile of the InGaP-on-GaAs heterointerface by FE-AES and its relationship to device properties
2006 · O. Ichikawa, N. Fukuhara, et al. · Journal of Crystal Growth · 7
Works count: 51
Citation count: 764
H-index: 16
I10-index: 18
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