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Xuguang Deng

Observed name: DENG Xuguang
ORCID: 0000-0002-8882-0999
Observed ORCID: 0000-0002-8882-0999
OpenAlex ID: A5044608102
Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs
2017 · Ronghui Hao, Weiyi Li, et al. · IEEE Electron Device Letters · 143
Studies on High-Voltage GaN-on-Si MIS-HEMTs Using LPCVD Si 3 N 4 as Gate Dielectric and Passivation Layer
2016 · Zhili Zhang, Guohao Yu, et al. · IEEE Transactions on Electron Devices · 130
Reverse Leakage Analysis for As-Grown and Regrown Vertical GaN-on-GaN Schottky Barrier Diodes
2020 · Kai Fu, Houqiang Fu, et al. · IEEE Journal of the Electron Devices Society · 94
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High Voltage Vertical GaN p-n Diodes With Hydrogen-Plasma Based Guard Rings
2019 · Houqiang Fu, Kai Fu, et al. · IEEE Electron Device Letters · 76
AlGaN/GaN MIS-HEMTs of Very-Low ${V}_{\sf {{th}}}$ Hysteresis and Current Collapse With In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator
2016 · Zhili Zhang, Weiyi Li, et al. · IEEE Electron Device Letters · 58
Selective area regrowth and doping for vertical gallium nitride power devices: Materials challenges and recent progress
2021 · Houqiang Fu, Kai Fu, et al. · Materials Today · 52
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Normally Off AlGaN/GaN MIS-High-Electron Mobility Transistors Fabricated by Using Low Pressure Chemical Vapor Deposition Si3N4 Gate Dielectric and Standard Fluorine Ion Implantation
2015 · Zhili Zhang, Kai Fu, et al. · IEEE Electron Device Letters · 52
GaN Vertical-Channel Junction Field-Effect Transistors With Regrown p-GaN by MOCVD
2020 · Chen Yang, Houqiang Fu, et al. · IEEE Transactions on Electron Devices · 50
Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
2018 · Fengfeng Shi, Jun Han, et al. · Materials Letters · 45
Effect of off-axis substrate angles on β-Ga2O3 thin films and solar-blind ultraviolet photodetectors grown on sapphire by MOCVD
2021 · Yongjian Ma, Wenbo Tang, et al. · Materials Science in Semiconductor Processing · 41
The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices
2021 · Kai Fu, Houqiang Fu, et al. · Applied Physics Letters · 35
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Studies on Fabrication and Reliability of GaN High-Resistivity-Cap-Layer HEMT
2018 · Ronghui Hao, Ning Xu, et al. · IEEE Transactions on Electron Devices · 35
Vertical GaN-on-GaN Schottky Barrier Diodes With Multi-Floating Metal Rings
2020 · Tsung-Han Yang, Houqiang Fu, et al. · IEEE Journal of the Electron Devices Society · 29
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Demonstration of low loss β -Ga2O3 optical waveguides in the UV–NIR spectra
2019 · Jingan Zhou, Hong Chen, et al. · Applied Physics Letters · 26
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High-Performance N-Polar GaN/AlGaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistors with Low Surface Roughness Enabled by Chemical–Mechanical-Polishing-Incorporated Layer Transfer Technology
2024 · Bohan Guo, Guohao Yu, et al. · Crystals · 16
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Influence of the TMAl source flow rate of the high temperature AlN buffer on the properties of GaN grown on Si(111) substrate
2016 · Kai Wang, Yanhui Xing, et al. · Journal of Alloys and Compounds · 15
Influence of pressure on the properties of AlN deposited by DC reactive magnetron sputtering on Si (100) substrate
2018 · Tao Li, Jun Han, et al. · Micro & Nano Letters · 14
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High quality of N-polar GaN film fabricated by layer transfer technology using high selective material removal rate of CMP
2022 · Zicheng Yu, Li Zhang, et al. · Materials Science in Semiconductor Processing · 13
Influence of channel/back-barrier thickness on the breakdown of AlGaN/GaN MIS-HEMTs
2018 · Jie Zhao, Yanhui Xing, et al. · Journal of Semiconductors · 13
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Impact of Unintentional Oxygen Incorporation on Leakage Behavior and Fatigue Endurance of Al 1‐x Sc x N 1‐y O y Ferroelectric Films
2025 · Siyu Yan, Xuguang Deng, et al. · Small · 12
Thermal stability of F ion-implant isolated AlGaN/GaN heterostructures
2018 · Shuxin Tan, Xuguang Deng, et al. · Science China Physics Mechanics and Astronomy · 11
Demonstration of GaN-based metal–insulator–semiconductor junction by hydrogen plasma treatment
2020 · Chen Yang, Houqiang Fu, et al. · Applied Physics Letters · 10
High-resistivity unintentionally carbon-doped GaN layers with nitrogen as nucleation layer carrier gas grown by metal-organic chemical vapor deposition
2017 · Fu Chen, Shichuang Sun, et al. · AIP Advances · 10
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Low Threshold Voltage Shift in AlGaN/GaN MIS-HEMTs on Si Substrate Using SiNx/SiON as Composite Gate Dielectric
2022 · Xiaodong Zhang, Xing Wei, et al. · Electronics · 8
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AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors with reduced leakage current and enhanced breakdown voltage using aluminum ion implantation
2016 · Shichuang Sun, Kai Fu, et al. · Applied Physics Letters · 8
Works count: 46
Citation count: 1,048
H-index: 15
I10-index: 23
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