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J.P. Lu

Activation of carbon monoxide on clean and sulfur modified Fe(100)
1987 · D.W. Moon, S.L. Bernasek, et al. · Surface Science · 115
Dual work function metal gates using full nickel silicidation of doped poly-Si
2003 · J.H. Sim, H.C. Wen, et al. · IEEE Electron Device Letters · 71
Dual-work-function metal gates by full silicidation of poly-Si with Co-Ni bi-Layers
2005 · J. Liu, H.C. Wen, et al. · IEEE Electron Device Letters · 61
The adsorption of oxygen on the Fe(100) surface
1989 · J.-P Lu, Mark R Albert, et al. · Surface Science · 57
Adsorption and dissociation of CO on Fe(100) at low coverage
1989 · J.-P. Lu, M.R. Albert, et al. · Surface Science · 36
Fluorescence yield near edge spectroscopy of π-bonded CO on Fe(100)
1989 · D.J. Dwyer, B. Rausenberger, et al. · Surface Science · 35
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A novel nickel SALICIDE process technology for CMOS devices with sub-40 nm physical gate length
2003 · J.P. Lu, D. Miles, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 31
Damascene integration of copper and ultra-low-k xerogel for high performance interconnects
2002 · E.M. Zielinski, S.W. Russell, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 28
Effect of sulfur on oxygen adsorption and oxidation of the Ni(111) surface
1992 · Jun Liu, J. P. Lu, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 27
A New Process for Depositing Tungsten Nitride Thin Films
1998 · J. P. Lu, W. Y. Hsu, et al. · Journal of The Electrochemical Society · 26
An enhanced 90nm high performance technology with strong performance improvements from stress and mobility increase through simple process changes
2004 · R. Khamankar, H. Bu, et al. · Symposium on VLSI Technology · 21
The decomposition of methanol on the sulfur-modified Fe(100) surface
1991 · J.-P. Lu, M.R. Albert, et al. · Surface Science · 17
Work Function Tuning of Fully Silicided NiSi Metal Gates Using a TiN Capping Layer
2004 · J.H. Sim, H.C. Wen, et al. · IEEE Electron Device Letters · 16
Guided Modes with a Linearly Varying Transverse Field Inside a Left-Handed Dielectric Slab
2006 · J. Lu, B.-I. Wu, et al. · Journal of Electromagnetic Waves and Applications · 14
High resolution electron energy loss spectroscopic characterization of ordered atomic overlayers on Fe(100)
1990 · J.-P. Lu, M.R. Albert, et al. · Surface Science · 13
Adsorption state conversion of CO on Fe(100)
1988 · J.-P. Lu, M.R. Albert, et al. · Surface Science · 11
Factors Influencing the Leakage Current in Embedded SiGe Source/Drain Junctions
2008 · Eddy Simoen, Mireia Bargallo Gonzalez, et al. · IEEE Transactions on Electron Devices · 10
Improving gate-oxide reliability by TiN capping layer on NiSi FUSI metal gate
2005 · J. Liu, H.C. Wen, et al. · IEEE Electron Device Letters · 10
A Novel Process for Fabricating Conformal and Stable TiN‐Based Barrier Films
1996 · J. P. Lu, W. Y. Hsu, et al. · Journal of The Electrochemical Society · 10
Stress analysis of Si1−xGex embedded source/drain junctions
2008 · M. Bargallo Gonzalez, E. Simoen, et al. · Materials Science in Semiconductor Processing · 8
Nickel SALICIDE Process Technology for CMOS Devices of 90nm Node and Beyond
2006 · J.P. Lu, D.S. Miles, et al. · International Workshop on Junction Technology · 6
Effect of Ni Thickness Dependence on NiSi FUSI Metal Gate Characteristics
2004 · H. C. Wen, J. H. Sim, et al. · Electrochemical and Solid-State Letters · 6
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Understanding and eliminating defects in electroplated Cu films
2001 · J.P. Lu, L. Chen, et al. · IEEE International Interconnect Technology Conference (IITC) · 6
45-nm node NiSi FUSI on nitrided oxide bulk CMOS fabricated by a novel integration process
2006 · S. Yu, J.-P. Lu, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 5
The Impact of TiN Capping Layer on NiSi, $hbox CoSi_2$ , and $hbox Co_xhbox Ni_1-xhbox Si_2$ FUSI Metal Gate Work Function Adjustment
2005 · J. Liu, H.-C. Wen, et al. · IEEE Transactions on Electron Devices · 5
Works count: 40
Citation count: 666
H-index: 14
I10-index: 19
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