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Cyril Fellous

Observed names: C Fellous, C. Fellous, Fellous, C.
OpenAlex ID: A5046478959
230-GHz self-aligned SiGeC HBT for optical and millimeter-wave applications
2005 · P. Chevalier, C. Fellous, et al. · IEEE Journal of Solid-State Circuits · 64
High performance 0.25 μm SiGe and SiGe:C HBTs using non selective epitaxy
2002 · H. Baudry, B. Martinet, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 45
230 GHz self-aligned SiGeC HBT for 90 nm BiCMOS technology
2004 · P. Chevalier, C. Fellous, et al. · IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM) · 39
Study of dynamical formation and shape of microlenses formed by the reflow method
2006 · S. Audran, B. Faure, et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 23
Thermal and chemical loading effects in non selective Si/SiGe epitaxy
2002 · C Fellous, F Romagna, et al. · Materials Science and Engineering B · 16
180 GHz f/sub T/ and f/sub max/ self-aligned SiGeC HBT using selective epitaxial growth of the base
2004 · P. Chevalier, C. Fellous, et al. · IEEE Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS) · 10
Microfocus x-ray study of selective area epitaxy of SiGe on Si
2002 · K. P. Giannakopoulos, S. Roth, et al. · Journal of Applied Physics · 9
Study of the poly/epi kinetic ratio in SiH4 based chemistry for new CMOS architectures
2005 · Alexandre Talbot, Julien Arcamone, et al. · Materials Science in Semiconductor Processing · 7
Investigation of the Effectiveness of a Buried Carbon Layer to Suppress Transient Diffusion Effects in SiGe HBTs
2000 · S. Jouan, H. Baudry, et al. · European Solid-State Device Research Conference · 5
Electromigration and adhesion improvements of Thick Cu/BCB architecture in BiCMOS RF technology
2015 · L. Dumas, S. Verrier, et al. · 3
Selective SiGeC epitaxy by RTCVD for high performance self-aligned HBT
2004 · C. Fellous, F. Deleglise, et al. · IEEE Conference on Electrical Performance of Electronic Packaging and Systems (EPEPS) · 3
Non-destructive optical methods for assessing defects in production of Si or SiGe materials
2004 · V. Higgs, N. Laurent, et al. · The European Physical Journal Applied Physics · 2
A 70-GHz-fT double-polysilicon SiGe HBT using a non selective epitaxial growth
2002 · H Baudry, C Fellous, et al. · Materials Science and Engineering B · 2
Suppression of boron transient-enhanced diffusion in SiGe HBTs by a buried carbon layer
2001 · S. Jouan, H. Baudry, et al. · IEEE Transactions on Electron Devices · 2
Si-SiGe(C) Epitaxy by RTCVD
2007 · Didier Dutartre, F. Deléglise, et al. · CRC Press eBooks · 1
Modeling Dopant Diffusion in SiGe and SiGeC alloys
2004 · Ardechir Pakfar, Philippe Holliger, et al. · MRS Proceedings · 1
Modeling dopant diffusion in SiGe and SiGeC layers
2004 · A. Pakfar, P. Holliger, et al. · Springer eBooks · 1
Si–SiGe(C) Epitaxy by RTCVD
2005 · F Deleglise, D Dutartre, et al. · CRC Press eBooks
Epitaxies d'alliages Silicium-Germanium en milieu industriel pour les applications BiCMOS
2002 · C. Fellous · OpenGrey (Institut de l'Information Scientifique et Technique)
High performance 0.25 µm SiGe and SiGe:C HBT's using non selective epitaxy
2001 · Baudry, H., Martinet, B., et al. · HAL
Works count: 20
Citation count: 233
H-index: 7
I10-index: 6
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