Work

Modeling dopant diffusion in SiGe and SiGeC layers

Year: 2004

Type: book-chapter

Source: Springer eBooks

DOI: 10.1007/978-3-7091-0624-2_11

Authors: A. Pakfar, P. Holliger, A. Poncet, C. Fellous, D. Dutartre, T. Schwartzmann, H. Jaouen

Institutions: STMicroelectronics (France), Institut National des Sciences Appliquées de Lyon, Commissariat à l'Énergie Atomique et aux Énergies Alternatives, CEA Grenoble, Direction de la Recherche Technologique, Laboratoire d'Électronique des Technologies de l'Information

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4249564461

FWCI:

Cites: 10

Cited by: 1

Related to: 10