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Ph. Holliger

Natural fission reactors in the Franceville basin, Gabon: A review of the conditions and results of a “critical event” in a geologic system
1996 · F. Gauthier-Lafaye, P. Holliger, et al. · Geochimica et Cosmochimica Acta · 239
Reduced pressure–chemical vapor deposition of Ge thick layers on Si(001) for 1.3–1.55-μm photodetection
2004 · J. M. Hartmann, A. Abbadie, et al. · Journal of Applied Physics · 230
Reduced pressure-chemical vapor deposition of intrinsic and doped Ge layers on Si(001) for microelectronics and optoelectronics purposes
2004 · J.M. Hartmann, J.-F. Damlencourt, et al. · Journal of Crystal Growth · 140
Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O
2002 · L.G. Gosset, J.-F. Damlencourt, et al. · Journal of Non-Crystalline Solids · 138
Stable lead isotopes ratios in major french rivers and estuaries
1986 · F ELBAZPOULICHET, P HOLLIGER, et al. · The Science of The Total Environment · 108
SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition
2002 · J.M Hartmann, V Loup, et al. · Journal of Crystal Growth · 104
Organic matter and containment of uranium and fissiogenic isotopes at the Oklo natural reactors
1991 · Bartholomew Nagy, F. Gauthier-Lafaye, et al. · Nature · 93
Selective epitaxial growth of boron- and phosphorus-doped Si and SiGe for raised sources and drains
2004 · J.M Hartmann, L Clavelier, et al. · Journal of Crystal Growth · 74
Interface properties of ultra-thin HfO2 films grown by atomic layer deposition on SiO2/Si
2003 · O. Renault, D. Samour, et al. · Thin Solid Films · 71
Contributionàl'étude de la température dans les réacteurs fossiles d'Oklo par la mesure du rapport isotopique du lutétium
1981 · P. Holliger, C. Devillers · Earth and Planetary Science Letters · 62
SIMS depth profiling of ultrashallow P, Ge and As implants in Si using MCs 2 + ions
2002 · P. Holliger, F. Laugier, et al. · Surface and Interface Analysis · 56
Reduced pressure chemical vapour deposition of SiGe virtual substrates for high mobility devices
2003 · J M Hartmann, Y Bogumilowicz, et al. · Semiconductor Science and Technology · 52
Quantification of SiGe layer composition using MCs+ and MCs2+ secondary ions in ToF-SIMS and magnetic SIMS
2008 · D. Marseilhan, J.P. Barnes, et al. · Applied Surface Science · 51
Growth kinetics of Si on fullsheet, patterned and silicon-on-insulator substrates
2003 · J.M. Hartmann, A. Abbadie, et al. · Journal of Crystal Growth · 51
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Low thermal budget surface preparation of Si and SiGe
2003 · A. Abbadie, J.M. Hartmann, et al. · Applied Surface Science · 49
Modification of GaN(0001) growth kinetics by Mg doping
2004 · E. Monroy, T. Andreev, et al. · Applied Physics Letters · 48
Occurrence of naturally enriched 235U: Implications for plutonium behaviour in natural environments
1993 · R. Bros, L. Turpin, et al. · Geochimica et Cosmochimica Acta · 46
Low-temperature RPCVD of Si, SiGe alloy, and Si1−yCy films on Si substrates using trisilane (Silcore®)
2009 · A. Gouyé, O. Kermarrec, et al. · Journal of Crystal Growth · 44
Non-destructive X-ray study of the interphases in Mo/Si and Mo/B4C/Si/B4C multilayers
2006 · H. Maury, P. Jonnard, et al. · Thin Solid Films · 44
Structural properties of undoped and doped cubic GaN grown on SiC(001)
2002 · E. Martinez-Guerrero, E. Bellet-Amalric, et al. · Journal of Applied Physics · 41
High-temperature growth of very high germanium content SiGe virtual substrates
2006 · Y. Bogumilowicz, J.M. Hartmann, et al. · Journal of Crystal Growth · 35
Metal–insulator–metal capacitors using Y2O3 dielectric grown by pulsed-injection plasma enhanced metalorganic chemical vapor deposition
2004 · C. Durand, C. Vallée, et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 35
Comparative Scalability of PVD and CVD TiN on HfO2 as a Metal Gate Stack for FDSOI cMOSFETs down to 25nm Gate Length and Width
2006 · F. Andrieu, O. Faynot, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 32
Growth of SiGe/Si superlattices on silicon-on-insulator substrates for multi-bridge channel field effect transistors
2005 · J.M. Hartmann, P. Holliger, et al. · Journal of Crystal Growth · 28
Characterization of a La-Ce-Sr-Ca aluminous hydroxy phosphate in nuclear zone 13 in the Oklo uranium deposit (Gabon)
1997 · Y. Dymkov, P. Holliger, et al. · Mineralium Deposita · 27
Works count: 87
Citation count: 2,386
H-index: 25
I10-index: 50
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