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Gerhard G. Fischer
Observed names:
G. Fischer,
G. G. Fischer,
G.G. Fischer,
Gerhard Fischer,
Gerhard G Fischer
Institution:
Leibniz Institute for High Performance Microelectronics
Observed institutions:
Goethe University Frankfurt,
University of Colorado Boulder,
Clausthal University of Technology,
Ruhr University Bochum,
Leibniz Institute for High Performance Microelectronics
ORCID:
0000-0002-6888-9008
Observed ORCID:
0000-0002-6888-9008
OpenAlex ID:
A5046488981
SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project
2015
·
J. Bock
, K. Aufinger
, et al.
·
IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
·
187
SiGe HBT technology with fT/fmax of 300GHz/500GHz and 2.0 ps CML gate delay
2010
·
B. Heinemann
, R. Barth
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
180
A 0.13 $\mu{\hbox {m}}$ SiGe BiCMOS Technology Featuring f$_{T} $/f$_{\max}$ of 240/330 GHz and Gate Delays Below 3 ps
2010
·
Holger Rucker
, Bernd Heinemann
, et al.
·
IEEE Journal of Solid-State Circuits
·
156
Thermodynamic calculation of the binary systems M-Ga and investigation of ternary M-Ga-N phase equilibria (M=Ni, Co, Pd, Cr)
1999
·
J. Gröbner
, R. Wenzel
, et al.
·
Journal of Phase Equilibria and Diffusion
·
55
Low- and high-field electron-transport parameters for unstrained and strained Si/sub 1-x/Ge/sub x/
1997
·
F.M. Bufler
, P. Graf
, et al.
·
IEEE Electron Device Letters
·
53
Advanced Heterojunction Bipolar Transistor for Half-THz SiGe BiCMOS Technology
2015
·
Alexander Fox
, Bernd Heinemann
, et al.
·
IEEE Electron Device Letters
·
43
Ohmic contacts on p-GaN (Part I):
2001
·
Roland Wenzel
, Gerhard G Fischer
, et al.
·
Materials Science in Semiconductor Processing
·
42
A Compact Linear 60-GHz PA With 29.2% PAE Operating at Weak Avalanche Area in SiGe
2012
·
Yaoming Sun
, Gerhard G. Fischer
, et al.
·
IEEE Transactions on Microwave Theory and Techniques
·
32
Ageing and thermal recovery of advanced SiGe heterojunction bipolar transistors under long-term mixed-mode and reverse stress conditions
2015
·
G.G. Fischer
, G. Sasso
·
Microelectronics Reliability
·
29
Hot-Carrier Degradation in SiGe HBTs: A Physical and Versatile Aging Compact Model
2017
·
Chhandak Mukherjee
, Thomas Jacquet
, et al.
·
IEEE Transactions on Electron Devices
·
26
A modular, low-cost SiGe:C BiCMOS process featuring high-f/sub T/ and high BV/sub CEO/ transistors
2004
·
D. Knoll
, B. Heinemann
, et al.
·
IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
·
23
The Effects of X-Ray and Proton Irradiation on a 200 GHz/90 GHz Complementary $(npn + pnp)$ SiGe:C HBT Technology
2007
·
Ryan M. Diestelhorst
, Steven Finn
, et al.
·
IEEE Transactions on Nuclear Science
·
19
Cost-effective high-performance high-voltage SiGe:C HBTs with 100 GHz f/sub T/ and BV/sub CEO/ /spl times/ f/sub T/ products exceeding 220 VGHz
2001
·
B. Heinemann
, D. Kruger
, et al.
·
Technical digest - International Electron Devices Meeting/Technical digest
·
16
Physical, small-signal and pulsed thermal impedance characterization of multi-finger SiGe HBTs close to the SOA edges
2019
·
Marine Couret
, Gerhard Fischer
, et al.
·
IEEE International Conference on Microelectronic Test Structures (ICMTS)
·
15
Hole transport investigation in unstrained and strained SiGe
1998
·
F. M. Bufler
, P. Graf
, et al.
·
Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena
·
15
Low power fundamental VCO design in D-band using 0.13 µm SiGe BiCMOS technology
2015
·
U. Ali
, G. Fischer
, et al.
·
German Microwave Conference
·
14
Ohmic contacts on p-GaN (Part II):
2001
·
Roland Wenzel
, Gerhard G Fischer
, et al.
·
Materials Science in Semiconductor Processing
·
14
Characterization of Dynamic Large-Signal Operating Limits and Long-Term RF Reliability of SiGe HBTs
2022
·
Christoph Weimer
, Xiaodi Jin
, et al.
·
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
·
12
Junction Isolation Single Event Radiation Hardening of a 200 GHz SiGe:C HBT Technology Without Deep Trench Isolation
2009
·
Ryan M. Diestelhorst
, Stanley D. Phillips
, et al.
·
IEEE Transactions on Nuclear Science
·
12
Characterization, Analysis, and Modeling of Long-Term RF Reliability and Degradation of SiGe HBTs for High Power Density Applications
2023
·
Christoph Weimer
, Gerhard G. Fischer
, et al.
·
IEEE Transactions on Device and Materials Reliability
·
11
A fully integrated fully differential low-noise amplifier for short range automotive radar using a SiGe:C BiCMOS Technology
2007
·
Sebastien Chartier
, Bernd Schleicher
, et al.
·
European Microwave Integrated Circuits Conference
·
11
An Experimental Load-Pull Based Large-Signal RF Reliability Study of SiGe HBTs
2021
·
C. Weimer
, P. Sakalas
, et al.
·
IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS)
·
10
Long-term reliability of high-performance SiGe:C heterojunction bipolar transistors
2012
·
G. G. Fischer
, D. Micusik
, et al.
·
IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM)
·
7
Temperature Stability and Reliability Aspects of 77 GHz Voltage Controlled Oscillators in a SiGe:C BiCMOS Technology
2008
·
Gerhard G. Fischer
, Srdjan Glisic
·
IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF)
·
7
Comparative analysis of minority carrier transport in npn bipolar transistors with Si, Si 1−x Ge x , and Si 1−y C y base layers
2000
·
B. Heinemann
, D. Knoll
, et al.
·
Thin Solid Films
·
7
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Works count:
57
Citation count:
1,075
H-index:
15
I10-index:
22
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