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R. J. Kriegler
Observed names:
R KRIEGLER,
R. J. KRIEGLER,
R. Kriegler,
R.J. Kriegler
Observed institutions:
Nortel (Canada),
Bell (Canada)
OpenAlex ID:
A5046555938
The Effect of HCl and Cl[sub 2] on the Thermal Oxidation of Silicon
1972
·
R. J. Kriegler
, Y. C. Cheng
, et al.
·
Journal of The Electrochemical Society
·
118
The induced infrared fundamental band of hydrogen dissolved in solid argon
1968
·
R. J. Kriegler
, H. L. Welsh
·
Canadian Journal of Physics
·
52
Neutralization of Na+ Ions in ``HCl-Grown'' SiO2
1972
·
R. J. Kriegler
·
Applied Physics Letters
·
51
Effect of B, C, N, and Ne ion implantation on the oxidation of polycrystalline Cu
1976
·
H. M. Naguib
, R. J. Kriegler
, et al.
·
Journal of Vacuum Science and Technology
·
37
Determination of surface-state parameters from transfer-loss measurements in CCD’s
1979
·
R. J. Kriegler
, T. F. Devenyi
, et al.
·
Journal of Applied Physics
·
31
Direct measurement of Na+ ion mobility in SiO2 films☆
1976
·
R KRIEGLER
, T DEVENYI
·
Thin Solid Films
·
26
Dielectric loss and current—Voltage measurements in sodium-contaminated Si—SiO2—Cr structures
1973
·
R.J. Kriegler
, R. Bartnikas
·
IEEE Transactions on Electron Devices
·
26
The role of HCl in the passivation of MOS structures
1972
·
R.J. Kriegler
·
Thin Solid Films
·
23
The Passivating Effect of Chlorine in SiO2
1973
·
R. J. KRIEGLER
·
Denki Kagaku oyobi Kogyo Butsuri Kagaku
·
13
PDF
Dielectric relaxation in Si—SiO2—Cr structures
1970
·
R.J. Kriegler
, R. Bartnikas
·
IEEE Transactions on Electron Devices
·
11
Ion Instabilities in MOS Structures
1974
·
R. J. Kriegler
·
IEEE International Reliability Physics Symposium proceedings
·
8
Low-frequency noise in HC1 processed IGFET's
1974
·
Y.C. Cheng
, J.W. Haslett
, et al.
·
Proceedings of the IEEE
·
8
Collision-Induced Absorption of Hydrogen in Liquid Argon; the Liquid Cell Model
1969
·
H. L. Welsh
, R. J. Kriegler
·
The Journal of Chemical Physics
·
8
Temperature-Bias Aging of (HCl) MOS Structures
1973
·
R.J. Kriegler
, T.F. Devenyi
·
IEEE International Reliability Physics Symposium proceedings
·
5
High quality SiO2for integrated circuits
1975
·
R. Kriegler
·
Digest of technical papers/Digest of technical papers - IEEE International Solid-State Circuits Conference
·
3
THE USE OF HCl PASSIVATION IN THE PROCESSING TECHNOLOGY OF MOSFET DEVICES
1973
·
R. J. Kriegler
, A. Aitken
, et al.
·
International Conference on Solid State Devices and Materials (SSDM)
·
2
Determination of transfer noise from transfer-loss measurements in SCCD's
1983
·
K.D. Chik
, R.J. Kriegler
, et al.
·
IEEE Transactions on Electron Devices
·
1
IVa-2 Determination of surface state capture cross section from transfer loss measurements in CCD's
1977
·
R.J. Kriegler
, J. Shappir
, et al.
·
IEEE Transactions on Electron Devices
·
1
Determination of surface- and bulk-generation parameters from dark-current measurements in surface-channel CCD's
1985
·
K.D. Chik
, R.J. Kriegler
, et al.
·
IEEE Transactions on Electron Devices
WA-A6 Determination of intrinsic noise contributions in surface-channel CCD's
1978
·
K.D. Chik
, T.F. Devenyi
, et al.
·
IEEE Transactions on Electron Devices
塩素によるシリコン酸化膜の安定化 (半導体・集積回路の生産技術(特集))
1973
·
R.J. Kriegler
·
Denki Kagaku oyobi Kogyo Butsuri Kagaku
ChemInform Abstract: EINFLUSS VON HCL UND CL2 AUF DIE THERMISCHE OX. VON SILICIUM
1972
·
R. J. KRIEGLER
, X. C. CHENG
, et al.
·
ChemInform
Induced Infrared Spectra of Hydrogen and Deuterium Dissolved in Liquid and Solid Argon: the Cell Model of the Absorption Process
1968
·
J. De Remigis
, H. L. Welsh
, et al.
·
The Knowledge Bank (The Ohio State University)
The Fundamental Absorption Band of Hydrogen Dissolved in Liquid and Solid Argon.
1966
·
R. J. Kriegler
The Infrared Absorption Spectrum of $h_{2}$ Molecules in Crystalline Argon
1966
·
R. J. Kriegler
, J. Van Kranendonk
, et al.
·
The Knowledge Bank (The Ohio State University)
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Works count:
25
Citation count:
424
H-index:
10
I10-index:
10
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