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Christoph Zechner
Observed names:
C Zechner,
C. Zechner
Institution:
Synopsys (Germany)
Observed institutions:
Toshiba (Japan),
Synopsys (Switzerland),
University of Konstanz,
Applied Materials (United States),
ETH Zurich,
GlobalFoundries (United States),
Synopsys (United States),
Synopsys (Germany),
Toshiba Electronic Devices & Storage Corporation (Japan)
show all 9
ORCID:
0000-0001-9415-0111
Observed ORCID:
0000-0001-9415-0111
OpenAlex ID:
A5046748552
Current Understanding and Modeling of B Diffusion and Activation Anomalies in Preamorphized Ultra-Shallow Junctions
2004
·
B. Colombeau
, A.J. Smith
, et al.
·
MRS Proceedings
·
42
Monte Carlo simulation and measurement of nanoscale n-MOSFETs
2003
·
F.M. Bufler
, Y. Asahi
, et al.
·
IEEE Transactions on Electron Devices
·
42
Efficient TCAD Model for the Evolution of Interstitial Clusters, {311} Defects, and Dislocation Loops in Silicon
2007
·
Nikolas Zographos
, Christoph Zechner
, et al.
·
MRS Proceedings
·
33
Two- and three-dimensional optical carrier generation determination in crystalline silicon solar cells
1998
·
C Zechner
, P Fath
, et al.
·
Solar Energy Materials and Solar Cells
·
26
Enhanced carrier collection observed in mechanically structured silicon with small diffusion length
1999
·
G. Hahn
, C. Zechner
, et al.
·
Journal of Applied Physics
·
20
Double sided minority carrier collection in silicon solar cells
2000
·
E. Van Kerschaver
, C. Zechner
, et al.
·
IEEE Transactions on Electron Devices
·
18
Multiscale modeling of doping processes in advanced semiconductor devices
2016
·
Nikolas Zographos
, Christoph Zechner
, et al.
·
Materials Science in Semiconductor Processing
·
17
Maximum Active Concentration of Ion-Implanted Phosphorus During Solid-Phase Epitaxial Recrystallization
2007
·
Kunihiro Suzuki
, Yoko Tada
, et al.
·
IEEE Transactions on Electron Devices
·
15
On a computationally efficient approach to boron-interstitial clustering
2008
·
J. Schermer
, A. Martinez-Limia
, et al.
·
Solid-State Electronics
·
14
Ab initio calculations of phosphorus and arsenic clustering parameters for the improvement of process simulation models
2008
·
Beat Sahli
, Kilian Vollenweider
, et al.
·
Materials Science and Engineering B
·
13
Role of the indium–carbon interaction on In diffusion and activation in Si
2003
·
Antonino La Magna
, Silvia Scalese
, et al.
·
Applied Physics Letters
·
13
Progress in a novel high-throughput mechanical texturization technology for highly efficient multicrystalline silicon solar cells
1997
·
P. Fath
, C. Borst
, et al.
·
Solar Energy Materials and Solar Cells
·
13
Transfer of physically-based models from process to device simulations: Application to advanced SOI MOSFETs
2009
·
E.M. Bazizi
, A. Pakfar
, et al.
·
Thin Solid Films
·
11
TCAD calibration of USJ profiles for advanced deep sub-μm CMOS processes
2002
·
C Zechner
, D Matveev
, et al.
·
Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
·
11
Modeling boron dose loss in sidewall spacer stacks of complementary metal oxide semiconductor transistors
2016
·
Z. Essa
, B. Pelletier
, et al.
·
Solid-State Electronics
·
10
Accurate and efficient TCAD model for the formation and dissolution of small interstitial clusters and {311} defects in silicon
2005
·
Christoph Zechner
, Nikolas Zographos
, et al.
·
Materials Science and Engineering B
·
10
Single-Particle Approach to Self-Consistent Monte Carlo Device Simulation
2003
·
F. M. Bufler
, Christoph Zechner
, et al.
·
10
Systematic study towards high efficiency multicrystalline silicon solar cells with mechanical surface texturization
2002
·
C. Zechner
, G. Hahn
, et al.
·
Conference record of the IEEE Photovoltaic Specialists Conference
·
10
PDF
Silicon germanium interdiffusion in SiGe device fabrication: A calibrated TCAD model
2015
·
Christoph Zechner
, Nikolas Zographos
·
Materials Science in Semiconductor Processing
·
9
Modelling of Boron Trapping at End-of-Range defects in pre-amorphized ultra-shallow junctions
2008
·
E.M. Bazizi
, P.F. Fazzini
, et al.
·
Materials Science and Engineering B
·
9
Phase-field model for the dopant redistribution during solid phase epitaxial regrowth of amorphized silicon
2004
·
Christoph Zechner
, Dmitri Matveev
, et al.
·
Materials Science and Engineering B
·
9
Influence of HALO and drain-extension doping gradients on transistor performance
2004
·
Axel Erlebach
, Thomas Feudel
, et al.
·
Materials Science and Engineering B
·
9
Solar cells with 11% efficiency on ribbon-growth-on-substrate (RGS) silicon
1998
·
G. Hahn
, C. Zechner
, et al.
·
Progress in Photovoltaics Research and Applications
·
9
PDF
Solar cell emitter design with PV-tailored implantation
2011
·
T. Ohrdes
, S. Steingrube
, et al.
·
Energy Procedia
·
8
PDF
Hydrogen in Silicon Solar Cells: The Role of Diffusion
2024
·
Jonas Schön
, Phillip Hamer
, et al.
·
Solar RRL
·
7
PDF
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Works count:
65
Citation count:
480
H-index:
12
I10-index:
18
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