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J. Deng
Observed names:
J Deng,
Jianglong Deng
Institutions:
Nanjing Tech University,
State Key Laboratory of Materials-Oriented Chemical Engineering
Observed institutions:
Nanjing Tech University,
Rensselaer Polytechnic Institute,
Synopsys (United States),
Sensor Electronic Technology (United States),
State Key Laboratory of Materials-Oriented Chemical Engineering
OpenAlex ID:
A5046917869
AlGaN-based 280nm light-emitting diodes with continuous-wave power exceeding 1mW at 25mA
2004
·
J. P. Zhang
, X. Hu
, et al.
·
Applied Physics Letters
·
109
Efficiency droop in 245–247 nm AlGaN light-emitting diodes with continuous wave 2 mW output power
2010
·
W. Sun
, M. Shatalov
, et al.
·
Applied Physics Letters
·
107
Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes
2008
·
R. Jain
, W. Sun
, et al.
·
Applied Physics Letters
·
98
AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN
2003
·
X. Hu
, J. Deng
, et al.
·
Applied Physics Letters
·
94
Deep ultraviolet light‐emitting diodes
2006
·
X. Hu
, J. Deng
, et al.
·
physica status solidi (a)
·
71
Current and optical noise of GaN∕AlGaN light emitting diodes
2006
·
S. Sawyer
, S. L. Rumyantsev
, et al.
·
Journal of Applied Physics
·
48
Deep-ultraviolet light-emitting diodes for frequency domain measurements of fluorescence lifetime in basic biofluorophores
2005
·
P. Vita
, N. Kurilčik
, et al.
·
Applied Physics Letters
·
24
High-power AlGaN∕InGaN∕AlGaN∕GaN recessed gate heterostructure field-effect transistors
2005
·
R. S. Qhalid Fareed
, X. Hu
, et al.
·
Applied Physics Letters
·
22
Novel AlInN/GaN integrated circuits operating up to 500°C
2015
·
R. Gaska
, M. Gaevski
, et al.
·
Solid-State Electronics
·
21
Low-frequency noise of GaN-based ultraviolet light-emitting diodes
2005
·
S. L. Rumyantsev
, S. Sawyer
, et al.
·
Journal of Applied Physics
·
19
Acousto-optic diffraction of blue and red light in GaN
2002
·
D. Ciplys
, R. Rimeika
, et al.
·
Applied Physics Letters
·
16
Device self‐heating effects in deep UV LEDs studied by systematic variation in pulsed current injection
2008
·
Meredith L. Reed
, Michael Wraback
, et al.
·
Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics
·
15
Real-space electron transfer in III-nitride metal-oxide-semiconductor-heterojunction structures
2005
·
S. Saygi
, A. Koudymov
, et al.
·
Applied Physics Letters
·
12
Novel AlInN/GaN integrated circuits operating up to 500 °C
2014
·
R. Gaska
, M. Gaevski
, et al.
·
European Solid-State Device Research Conference
·
11
2- to 20-GHz Switch Using III-Nitride Capacitively Coupled Contact Varactors
2013
·
F. Jahan
, Y.-H. Yang
, et al.
·
IEEE Electron Device Letters
·
9
RF power limiter using capacitively-coupled contacts III-nitride varactor
2012
·
F. Jahan
, M. Gaevski
, et al.
·
Electronics Letters
·
9
Fluorescence-lifetime identification of biological agents using deep ultraviolet light-emitting diodes
2005
·
P. Vitta
, N. Kurilcik
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
9
Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs
2008
·
N. Pala
, X. Hu
, et al.
·
Solid-State Electronics
·
8
Green-Emissive Carbon Dots: Microwave Synthesis, Optical Properties, and Fluorescence Mechanism
2025
·
Jianglong Deng
, Lintao Chen
, et al.
·
Industrial & Engineering Chemistry Research
·
7
III-nitride microwave control devices and ICs
2013
·
G Simin
, F Jahan
, et al.
·
Semiconductor Science and Technology
·
7
Low-loss AlInN/GaN microwave switch
2011
·
A. Sattu
, D. Billingsley
, et al.
·
Electronics Letters
·
6
Low frequency noise of light emitting diodes (Invited Paper)
2005
·
S. L. Rumyantsev
, S. Sawyer
, et al.
·
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE
·
6
A 110 mW AlGaN-based UV lamp emitting at 278 nm
2005
·
A. Lunev
, J. Zhang
, et al.
·
Conference digest
·
4
High-performance RF components using capacitively-coupled contacts over III-N heterostructures
2013
·
F. Jahan
, Y.-H. Yang
, et al.
·
IEEE Electronic Components and Technology Conference (ECTC)
·
3
Negative Differential Conductivity in AlGaN/GaN HEMTs: Real Space Charge Transfer from 2D to 3D GaN States?
2000
·
J. Deng
, R. Gaska
, et al.
·
MRS Internet Journal of Nitride Semiconductor Research
·
3
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Works count:
35
Citation count:
749
H-index:
12
I10-index:
14
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