Author

Ru-Ying Tong

Observed names: R. Tong, R. Y. Tong, R.Y. Tong

OpenAlex ID: A5047220242

Perpendicular spin transfer torque magnetic random access memories with high spin torque efficiency and thermal stability for embedded applications (invited)

2014 · Luc Thomas, Guenole Jan, et al. · Journal of Applied Physics · 260

High Spin Torque Efficiency of Magnetic Tunnel Junctions with MgO/CoFeB/MgO Free Layer

2012 · Guenole Jan, Yu-Jen Wang, et al. · Applied Physics Express · 93

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High-temperature thermal stability driven by magnetization dilution in CoFeB free layers for spin-transfer-torque magnetic random access memory

2018 · Jodi M. Iwata-Harms, Guenole Jan, et al. · Scientific Reports · 66

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Demonstration of fully functional 8Mb perpendicular STT-MRAM chips with sub-5ns writing for non-volatile embedded memories

2014 · Guenole Jan, Luc Thomas, et al. · Symposium on VLSI Technology · 66

Fully functional perpendicular STT-MRAM macro embedded in 40 nm logic for energy-efficient IOT applications

2015 · Yu Lu, Tom Zhong, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 61

Ultrathin perpendicular magnetic anisotropy CoFeB free layers for highly efficient, high speed writing in spin-transfer-torque magnetic random access memory

2019 · Jodi M. Iwata-Harms, Guenole Jan, et al. · Scientific Reports · 49

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Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM

2015 · Luc Thomas, Guenole Jan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 38

Achieving Sub-ns switching of STT-MRAM for future embedded LLC applications through improvement of nucleation and propagation switching mechanisms

2016 · Guenole Jan, Luc Thomas, et al. · Symposium on VLSI Technology · 36

Demonstration of Ultra-Low Voltage and Ultra Low Power STT-MRAM designed for compatibility with 0x node embedded LLC applications

2018 · Guenole Jan, Luc Thomas, et al. · Symposium on VLSI Technology · 34

STT-MRAM devices with low damping and moment optimized for LLC applications at Ox nodes

2018 · Luc Thomas, Guenole Jan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 20

Probing magnetic properties of STT-MRAM devices down to sub-20 nm using spin-torque FMR

2017 · Luc Thomas, Guenole Jan, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 17

Demonstration of an MgO based anti-fuse OTP design integrated with a fully functional STT-MRAM at the Mbit level

2015 · Guenole Jan, Luc Thomas, et al. · Symposium on VLSI Technology · 12

Demonstration of chip level writability, endurance and data retention of an entire 8Mb STT-MRAM array

2013 · Y. J. Lee, G. Jan, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 8

STT-MRAM for embedded memory applications from eNVM to last level cache

2017 · Luc Thomas, Guenole Jan, et al. · IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference · 6

Spin Transfer Torque driven dynamics of the synthetic antiferromagnetic reference layer of perpendicular MRAM devices

2017 · L. Thomas, M. Benzaouia, et al. · IEEE International Magnetics Conference · 6

Development of STT-MRAM for embedded memory applications

2017 · P. Wang, G. Jan, et al. · IEEE International Magnetics Conference · 4

Reduction of AMR effect in giant magnetoresistance spin valve structures

2001 · M. Li, S.-H. Liao, et al. · IEEE Transactions on Magnetics · 2

Comprehensive Reliability Study of STT-MRAM Devices and Chips for Last Level Cache Applications (LLC) at 0x Nodes

2019 · Jian Zhu, Yuan-Jen Lee, et al. · International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) · 1

High perpendicular anisotropy in sub-30 nm MRAM devices measured by spin-torque ferromagnetic resonance

2017 · L. Thomas, G. Jan, et al. · IEEE International Magnetics Conference · 1

Perpendicular STT-MRAM for high speed non-volatile embedded memory application

2015 · P. Wang, G. Jan, et al. · IEEE International Magnetics Conference

Works count: 20

Citation count: 780

H-index: 12

I10-index: 12