Get started
Author

Abhishek Bhattacharjee

Observed name: A. Bhattacharjee
Institution: Assam University
ORCID: 0000-0003-1924-0314
Observed ORCID: 0000-0003-1924-0314
OpenAlex ID: A5047291969
Spacer Engineering-Based High-Performance Reconfigurable FET With Low OFF Current Characteristics
2015 · A. Bhattacharjee, M. Saikiran, et al. · IEEE Electron Device Letters · 41
Impact of Gate/Spacer-Channel Underlap, Gate Oxide EOT, and Scaling on the Device Characteristics of a DG-RFET
2017 · Abhishek Bhattacharjee, Sudeb Dasgupta · IEEE Transactions on Electron Devices · 34
A Compact Physics-Based Surface Potential and Drain Current Model for an S/D Spacer-Based DG-RFET
2018 · Abhishek Bhattacharjee, Sudeb Dasgupta · IEEE Transactions on Electron Devices · 21
A First Insight to the Thermal Dependence of the DC, Analog and RF Performance of an S/D Spacer Engineered DG-Ambipolar FET
2017 · Abhishek Bhattacharjee, Marampally Saikiran, et al. · IEEE Transactions on Electron Devices · 21
Optimization of Design Parameters in Dual-k Spacer-Based Nanoscale Reconfigurable FET for Improved Performance
2016 · Abhishek Bhattacharjee, Sudeb Dasgupta · IEEE Transactions on Electron Devices · 15
Study on Temperature Dependence Scattering Mechanisms and Mobility Effects in GaN and GaAs HEMTs
2013 · D. Pandey, A. Bhattacharjee, et al. · Environmental science and engineering · 15
Performance Evaluation of a Novel GAA Schottky Junction (GAASJ) TFET with Heavily Doped Pocket
2017 · Navjeet Bagga, Anil Kumar, et al. · Superlattices and Microstructures · 11
Synthesis of Graphene Quantum Dots: A Comprehensive Review
2023 · Tanmoy Majumder, Abhishek Bhattacharjee · International Journal of Nanoscience · 7
A novel MTCMOS based 8T2M NVSRAM design for low power applications with high temperature endurance
2024 · Udayan Chakraborty, Tanmoy Majumder, et al. · Semiconductor Science and Technology · 4
A novel high-performance TG-based SRAM cell with 5 nm FinFET technology
2024 · Sandipan Pal, Bijoy Kumar Upadhyaya, et al. · Engineering Research Express · 3
Photoelectrochemical Behavior of ZnO Nanostructure: A Short Review
2023 · Tanmoy Majumder, Abhishek Bhattacharjee · World Scientific Annual Review of Functional Materials · 3
Performance analysis of 20 nm gate-length In0.2Al0.8N/GaN HEMT with Cu-gate having a remarkable highION/IOFFratio
2014 · A. Bhattacharjee, T. R. Lenka · Journal of Semiconductors · 3
PDF
Dynamic configuration optimization of FPGA accelerators through reinforcement learning for enhanced performance and resource utilization
2025 · Sandipan Pal, Bijoy Kumar Upadhyaya, et al. · Engineering Research Express · 2
The effect of temperature on the electrical characteristics of zigzag and armchair black phosphorus based 2D MOSFET
2024 · Tanmoy Majumder, Chandrima Mukherjee, et al. · Semiconductor Science and Technology · 1
Potential application of EPS in nano-biosensor development toward biomedical diagnosis
2026 · Bedanta Bhattacharjee, Nayan Ranjan Ghose Bishwas, et al. · Elsevier eBooks
Simulated effect of active layer thickness on bulk bilayer P3HT:PCBM solar cell performance
2026 · Tanmoy Majumder, Udayan Chakraborty, et al. · International Journal of Nano and Biomaterials
Author response for "Dynamic Configuration Optimization of FPGA Accelerators through Reinforcement Learning for Enhanced Performance and Resource Utilization"
2025 · Sandipan Pal, Bijoy Kumar Upadhayay, et al. · Publons reviews and discussion
Author response for "Dynamic Configuration Optimization of FPGA Accelerators through Reinforcement Learning for Enhanced Performance and Resource Utilization"
2024 · Sandipan Pal, Bijoy Kumar Upadhayay, et al. · Publons reviews and discussion
FinFET Advancements and Challenges: A State-of-the-Art Review
2023 · Rahul Ghosh, Tanmoy Majumder, et al. · BENTHAM SCIENCE PUBLISHERS eBooks
Design and Optimization of a 50 nm Dual Material Dual Gate (DMDG), High-к Spacer, FiNFET Having Variable Gate Metal Workfunction
2021 · Abhishek Bhattacharjee, Tanmoy Majumder, et al. · Communications in computer and information science
Source/Drain (S/D) Spacer-Based Reconfigurable Devices-Advantages in High-Temperature Applications and Digital Logic
2020 · Abhishek Bhattacharjee, Sudeb Dasgupta · Lecture notes in electrical engineering
RF and microwave characteristics of a 20nm gate length InAlN/GaN-based HEMT having a high “Figure of Merit”
2014 · A. Bhattacharjee, T. R. Lenka · International Conference on Devices, Circuits and Systems (ICDCS)
Insight to the 2DEG transport and mobility effects of a 20nm recessed gate InAlN/AlN/GaN HEMT
2014 · A. Bhattacharjee, T. R. Lenka · International Conference on Electronics and Communication Systems (ICECS)
Works count: 23
Citation count: 181
H-index: 7
I10-index: 7
Year
Topic
Type