Get started
Author

Mussaab I. Niass

Observed names: Mussaab I Niass, Mussaab I. NIASS, Mussaab Ibrahiam Niass, Mussaab Ibrahim Niass, Mussaab. I. Niass
ORCID: 0000-0003-1034-1856
Observed ORCID: 0000-0003-1034-1856
OpenAlex ID: A5047388990
p-AlInN electron blocking layer for AlGaN-based deep-ultraviolet light-emitting diode
2021 · Muhammad Nawaz Sharif, Mussaab Ibrahim Niass, et al. · Superlattices and Microstructures · 33
Enhancement of the optoelectronic characteristics of deep ultraviolet nanowire laser diodes by induction of bulk polarization charge with graded AlN composition in AlxGa1-xN waveguide
2020 · Sharif Muhammad Nawaz, Mussaab Ibrahim Niass, et al. · Superlattices and Microstructures · 32
Improve uniformity for an indoor visible light communication system
2020 · Mohammed S.M. Gismalla, Mohammad F.L. Abdullah, et al. · International Journal of Communication Systems · 28
Reduction of Electron Leakage in a Deep Ultraviolet Nitride Laser Diode with a Double-Tapered Electron Blocking Layer*
2019 · Yi-Fu Wang, Mussaab I. Niass, et al. · Chinese Physics Letters · 24
Compositionally graded AlGaN hole source layer for deep-ultraviolet nanowire light-emitting diode without electron blocking layer
2021 · Muhammad Nawaz Sharif, Muhammad Usman, et al. · Nanotechnology · 22
PDF
The effects of AlGaN quantum barriers on carrier flow in deep ultraviolet nanowire laser diode
2021 · Muhammad Nawaz Sharif, Mussaab Ibrahiam Niass, et al. · Semiconductor Science and Technology · 20
PDF
Improvement of radiative recombination rate in deep ultraviolet laser diodes with step-like quantum barrier and aluminum-content graded electron blocking layer*
2019 · Yi-Fu Wang, Mussaab I Niass, et al. · Chinese Physics B · 17
A contrivance of 277 nm DUV LD with B0.313Ga0.687N/B0.40Ga0.60N QWs and AlxGa1–xN heterojunction grown on AlN substrate
2019 · Mussaab I. Niass, Muhammad Nawaz Sharif, et al. · Journal of Semiconductors · 16
Data Rate and BER Analysis for Optical Attocells Configuration Model in Visible Light Communication
2019 · M.S.M Gismalla, M.F.L Abdullah, et al. · International Conference on Information Science and Communication Technology (ICISCT) · 16
Performance analysis for 263 nm AlGaN DUV EELD by different EBL techniques
2023 · Hameed Ur Rehman, Mussaab I. Niass, et al. · Optik · 12
A Design and Comparative Investigation of Graded Al x Ga 1– x N EBL for W‐B 0.375 GaN/W‐B 0.45 GaN Edge Emitting Laser Diode on AlN Substrate
2022 · Mussaab I. NIASS, Fang WANG, et al. · Chinese Journal of Electronics · 11
PDF
Increased radiative recombination of AlGaN-based deep ultraviolet laser diodes with convex quantum wells
2020 · Zhong-qiu Xing, Yong-jie Zhou, et al. · Optoelectronics Letters · 11
Structure optimization of 266 nm Al0.53GaN/Al0.75GaN SQW DUV-LD
2018 · Mussaab I. Niass, Junwei Zang, et al. · Journal of Crystal Growth · 11
PDF
Effects of the Stepped-Doped Lower Waveguide and a Doped p-Cladding Layer on AlGaN-Based Deep-Ultraviolet Laser Diodes
2022 · Sajid Ullah Khan, Sharif Muhammad Nawaz, et al. · Journal of Russian Laser Research · 6
Comparison of Multiple Deep Models on Semantic Segmentation for Breast Tumor Detection
2021 · Sajid Ullah Khan, Muhammad Nawaz Sharif, et al. · Foundation University Journal of Engineering and Applied Sciences · 4
PDF
Optimizing hole transport with P-type BGaN for 266.1 nm Deep-UV laser diodes
2025 · Muhammad Nauman, Hameed Ur Rehman, et al. · Micro and Nanostructures · 3
AlGaN-Based Deep UV Laser Diodes without an Electron Blocking Layer and with a Reduced Aluminum Composition of Quantum Barriers
2022 · Sajid Ullah Khan, Wang Yao, et al. · Journal of Russian Laser Research · 2
Impact of BGaN EBL on non-radiative recombination and carrier transport in 266-nm ALGaN DUV nanowire lasers
2026 · Nimat Ullah, Hameed Ur Rehman, et al. · Physica Scripta · 1
PDF
Performance enhancement of an AlGaN-based deep-ultraviolet laser diode using a two-stepped doped lower waveguide
2023 · Sajid Ullah Khan, Mussaab Ibrahim Niass, et al. · Journal of Optical Technology · 1
Increased Radiative Recombination in Nitride Laser Diodes with Inverse Tapered Electron Blocking Layer
2019 · Yifu Wang, Hangyu Wang, et al. · International Conference on Electronics Technology (ICET) · 1
Fabrication of Porous PVDF/Kenaf Fiber Membranes
2026 · M. Ezzldeen, Jing Wang, et al. · ChemRxiv
PDF
Impact of bowing parameter on the performance of BGaN/BGaN active layers in edge emitting laser diodes
2026 · Mussaab I Niass, Hameed Ur Rehman, et al. · Physica Scripta
Optimization of Mirror Reflectivity and Optical Loss in AlGaN/BGaN Blue Edge Emitting Laser Diodes
2026 · Mussaab I. Niass, Hameed Ur Rehman, et al. · ChemRxiv
PDF
Characterization of Non-Radiative Recombination Mechanisms in Boron Gallium Nitride Edge Emitting Laser Diodes
2026 · Mussaab I. Niass, Hameed Ur Rehman, et al. · ChemRxiv
PDF
Deep Ultraviolet Edge Emitting Laser Diode Using Novel Boron Gallium Nitride over Sapphire Substrate: Simulation Study
2021 · Mussaab I. Niass, Muhammad N. Sharif, et al. · China International Forum on Solid State Lighting & International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)
Works count: 27
Citation count: 271
H-index: 11
I10-index: 13
Year
Topic
Type