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B. Benbakhti

193 nm deep-ultraviolet solar-blind cubic boron nitride based photodetectors
2008 · A. Soltani, H. A. Barkad, et al. · Applied Physics Letters · 106
Effects of Self-Heating on Performance Degradation in AlGaN/GaN-Based Devices
2009 · Brahim Benbakhti, Ali Soltani, et al. · IEEE Transactions on Electron Devices · 71
Role of Self-Heating and Polarization in AlGaN/GaN-Based Heterostructures
2017 · Khaled Ahmeda, Brendan Ubochi, et al. · IEEE Access · 29
Impact of interface state trap density on the performance characteristics of different III–V MOSFET architectures
2009 · B. Benbakhti, J.S. Ayubi-Moak, et al. · Microelectronics Reliability · 26
A Parametric Technique for Trap Characterization in AlGaN/GaN HEMTs
2020 · S. J. Duffy, B. Benbakhti, et al. · IEEE Transactions on Electron Devices · 23
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Monte Carlo Study of Ultimate Channel Scaling in Si and In$_{\rm 0.3}$Ga$_{\rm 0.7}$As Bulk MOSFETs
2011 · Aynul Islam, Brahim Benbakhti, et al. · IEEE Transactions on Nanotechnology · 23
Design and analysis of the As implant-free quantum-well device structure
2010 · Brahim Benbakhti, Karol Kalna, et al. · Microelectronic Engineering · 22
Analysis of Thermal Effect Influence in Gallium-Nitride-Based TLM Structures by Means of a Transport–Thermal Modeling
2006 · B. Benbakhti, M. Rousseau, et al. · IEEE Transactions on Electron Devices · 22
Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes
2010 · H A Barkad, A Soltani, et al. · Journal of Physics D Applied Physics · 18
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Identify the critical regions and switching/failure mechanisms in non-filamentary RRAM (a-VMCO) by RTN and CVS techniques for memory window improvement
2016 · J. Ma, Z. Chai, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 17
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Energy Distribution of Positive Charges in ${\rm Al}_{2}{\rm O}_{3}{\rm GeO}_{2}/{\rm Ge}$ pMOSFETs
2014 · Jigang Ma, Jian F. Zhang, et al. · IEEE Electron Device Letters · 17
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Interaction between hot carrier aging and PBTI degradation in nMOSFETs: Characterization, modelling and lifetime prediction
2017 · M. Duan, J. F. Zhang, et al. · IEEE International Reliability Physics Symposium proceedings · 16
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Investigation of Preexisting and Generated Defects in Nonfilamentary a-Si/TiO2 RRAM and Their Impacts on RTN Amplitude Distribution
2018 · Jigang Ma, Zheng Chai, et al. · IEEE Transactions on Electron Devices · 14
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Characterization of Electron Traps in Si-Capped Ge MOSFETs With $\hbox{HfO}_{2}/\hbox{SiO}_{2}$ Gate Stack
2012 · B. Benbakhti, J. F. Zhang, et al. · IEEE Electron Device Letters · 14
Low Source/Drain Contact Resistance for AlGaN/GaN HEMTs with High Al Concentration and Si-HP [111] Substrate
2017 · S. J. Duffy, B. Benbakhti, et al. · ECS Journal of Solid State Science and Technology · 13
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Selective area growth of GaN-based structures by molecular beam epitaxy on micrometer and nanometer size patterns
2009 · Y. Cordier, F. Semond, et al. · Materials Science in Semiconductor Processing · 12
Mechanisms of a Rectifying TiN Gate Contact for AlGaN$/$GaN HEMTs on Silicon Substrate
2020 · Hassane Ouazzani Chahdi, Brahim Benbakhti, et al. · IEEE Transactions on Nanotechnology · 11
The implant-free quantum well field-effect transistor: Harnessing the power of heterostructures
2011 · Geert Hellings, Andriy Hikavyy, et al. · Thin Solid Films · 11
A Comparative Study of Defect Energy Distribution and Its Impact on Degradation Kinetics in GeO2/Ge and SiON/Si pMOSFETs
2016 · Jigang Ma, Wei Dong Zhang, et al. · IEEE Transactions on Electron Devices · 10
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Effect of interface state trap density on the characteristics of n-type, enhancement-mode, implant-free In0.3Ga0.7As MOSFETs
2009 · J. Ayubi-Moak, B. Benbakhti, et al. · Microelectronic Engineering · 10
Characterization of Negative-Bias Temperature Instability of Ge MOSFETs With ${\rm GeO}_{2}/{\rm Al}_{2}{\rm O}_{3}$ Stack
2014 · Jigang Ma, Jian Fu Zhang, et al. · IEEE Transactions on Electron Devices · 9
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Simulation Study of Performance for a 20-nm Gate Length In$_{\bf 0.53}$Ga$_{\bf 0.47}$As Implant Free Quantum Well MOSFET
2012 · Brahim Benbakhti, Antonio Martinez, et al. · IEEE Transactions on Nanotechnology · 8
Design optimization of the graded AlGaN/GaN HEMT device performance based on material and physical dimensions
2019 · Nurul Aida Farhana Othman, Sharidya Rahman, et al. · Microelectronics International · 7
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Strain-Reduction Induced Rise in Channel Temperature at Ohmic Contacts of GaN HEMTs
2018 · Steven J. Duffy, Brahim Benbakhti, et al. · IEEE Access · 7
Electron transport properties of gallium nitride for microscopic power device modelling
2009 · B Benbakhti, M Rousseau, et al. · Journal of Physics Conference Series · 7
Works count: 73
Citation count: 595
H-index: 14
I10-index: 20
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