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M. Baïra

Observed names: BAIRA, Mourad, M Baira, M. Baira, Mourad Baira
ORCID: 0000-0002-8634-9937
Observed ORCID: 0000-0002-8634-9937
OpenAlex ID: A5049400722
Hydrostatic pressure and temperature effects on nonlinear optical rectification in a lens shape InAs/GaAs quantum dot
2012 · L. Bouzaïene, R. Ben Mahrsia, et al. · Journal of Luminescence · 65
Evidence of Poole-frenkel and Fowler-Nordheim tunneling transport mechanisms in leakage current of (Pd/Au)/Al0.22Ga0.78N/GaN heterostructures
2020 · I. Jabbari, M. Baira, et al. · Solid State Communications · 40
Investigation of the InAs/GaAs Quantum Dots’ Size: Dependence on the Strain Reducing Layer’s Position
2015 · Manel Souaf, Mourad Baira, et al. · Materials · 33
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Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots
2019 · Mourad Baira, Bassem Salem, et al. · Nanomaterials · 25
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Electronic and transport properties of AlInN/AlN/GaN high electron mobility transistors
2015 · I. Saidi, H. Mejri, et al. · Superlattices and Microstructures · 24
Schottky barrier inhomogeneity in (Pd / Au) Al0.22 Ga0.78N/GaN/SiC HEMT: Triple Gaussian distributions
2021 · I. Jabbari, M. Baira, et al. · Chinese Journal of Physics · 19
C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps
2018 · I. Jabbari, M. Baira, et al. · Physica E Low-dimensional Systems and Nanostructures · 17
Non-radiative recombination process in BGaAs/GaAs alloys: Two layer photothermal deflection model
2013 · S. Ilahi, M. Baira, et al. · Journal of Alloys and Compounds · 17
Temperature dependence of optical properties of InAs/GaAs self-organized quantum dots
2009 · M. Baira, L. Bouzaïene, et al. · Journal of Applied Physics · 15
Correlation between Kink effect and trapping mechanism through H1 hole trap in Al0.22Ga0.78N/GaN/SiC HEMTs by current DLTS: field effect enhancement
2020 · I. Jabbari, M. Baira, et al. · Applied Physics A · 13
Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate
2018 · Reem Al-Saigh, Mourad Baira, et al. · Nanoscale Research Letters · 13
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Power density and temperature dependent multi-excited states in InAs/GaAs quantum dots
2010 · L. Bouzaïene, L. Sfaxi, et al. · Journal of Nanoparticle Research · 13
Toward long wavelength low density InAs/GaAs quantum dots
2006 · B. Ilahi, L. Sfaxi, et al. · Physics Letters A · 13
Cryogenic investigation of the negative pinch-off voltage Vpinch-off, leakage current and interface defects in the Al0.22Ga0.78N/GaN/SiC HEMT
2020 · I. Jabbari, M. Baira, et al. · Microelectronics Reliability · 12
Optical investigation of InAs quantum dots inserted in AlGaAs/GaAs modulation doped heterostructure
2011 · H. Khmissi, M. Baira, et al. · Journal of Applied Physics · 12
Evolution of InAs/GaAs QDs Size with the Growth Rate: A Numerical Investigation
2015 · Bouraoui Ilahi, Manel Souaf, et al. · Journal of Nanomaterials · 11
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Investigation of GeSn/Ge quantum dots’ optical transitions for integrated optics on Si substrate
2019 · Mourad Baira, Maha Aljaghwani, et al. · Results in Physics · 10
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Tuning direct bandgap GeSn/Ge quantum dots' interband and intraband useful emission wavelength: Towards CMOS compatible infrared optical devices
2018 · Mourad Baira, Bassem Salem, et al. · Superlattices and Microstructures · 10
Broken symmetry in laterally coupled InAs/GaAs quantum dots molecule
2008 · M. Baira, L. Sfaxi, et al. · Journal of Applied Physics · 9
Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field
2019 · Mourad Baira, Bassem Salem, et al. · Micromachines · 7
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Effective generation lifetime depth profile in InAs quantum dots grown on InAlAs/InP(0 0 1)
2005 · R Ajjel, M Baira, et al. · Semiconductor Science and Technology · 7
Capacitance–voltage analysis of InAs quantum dots grown on InAlAs/InP(0 0 1)
2008 · O. Saad, M. Baira, et al. · Microelectronics Journal · 6
Numerical investigation of the postgrowth intermixing effects on the optical properties of InAs/GaAs quantum dots
2014 · Manel Souaf, Mourad Baira, et al. · Physica B Condensed Matter · 5
Thickness dependence of photoluminescence for tensely strained silicon layer on insulator
2008 · J. Munguía, J-M. Bluet, et al. · Applied Physics Letters · 5
Hole emission processes from InAs quantum dots grown on p-type InAlAs/InP(0 0 1)
2006 · R Ajjel, M Baira, et al. · Semiconductor Science and Technology · 5
Works count: 32
Citation count: 413
H-index: 13
I10-index: 18
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