Get started
Author

D. P. Ettisserry

Observed names: D.P. Ettisserry, Devanarayanan Ettisserry, Devanarayanan P. Ettisserry, Perinthatta Ettisserry, Devanarayanan
ORCID: 0000-0002-4214-2141
Observed ORCID: 0000-0002-4214-2141
OpenAlex ID: A5050245994
NVDRAM: A 32Gb Dual Layer 3D Stacked Non-volatile Ferroelectric Memory with Near-DRAM Performance for Demanding AI Workloads
2023 · N. Ramaswamy, A. Calderoni, et al. · Technical digest - International Electron Devices Meeting/Technical digest · 153
Structure, bonding, and passivation of single carbon-related oxide hole traps near 4H-SiC/SiO2 interfaces
2014 · D. P. Ettisserry, N. Goldsman, et al. · Journal of Applied Physics · 32
The effect of defects and their passivation on the density of states of the 4H-silicon-carbide/silicon-dioxide interface
2013 · S. Salemi, N. Goldsman, et al. · Journal of Applied Physics · 25
Role of Oxygen Vacancies in Short- and Long-Term Instability of Negative Bias-Temperature Stressed SiC MOSFETs
2017 · Devanarayanan P. Ettisserry, Neil Goldsman, et al. · IEEE Transactions on Electron Devices · 18
Negative bias-and-temperature stress-assisted activation of oxygen-vacancy hole traps in 4H-silicon carbide metal-oxide-semiconductor field-effect transistors
2015 · D. P. Ettisserry, N. Goldsman, et al. · Journal of Applied Physics · 18
Comprehensive Reliability Assessment of 32Gb (Hf,Zr)O 2 -Based Ferroelectric NVDRAM
2024 · Devanarayanan Ettisserry, Angelo Visconti, et al. · IEEE International Reliability Physics Symposium proceedings · 16
A methodology to identify and quantify mobility-reducing defects in 4H-silicon carbide power metal-oxide-semiconductor field-effect transistors
2014 · D. P. Ettisserry, N. Goldsman, et al. · Journal of Applied Physics · 13
Voltage Reduction (1.4V) and Array Scaling (41nm) of Ferroelectric NVDRAM for Low-Power and High-Density Applications
2025 · A. Calderoni, A. Chavan, et al. · IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) · 12
Materials Engineering for High Performance Ferroelectric Memory
2024 · Ashonita Chavan, Adharsh Rajagopal, et al. · IEEE International Memory Workshop (IMW) · 11
Effects of carbon-related oxide defects on the reliability of 4H-SiC MOSFETs
2014 · D.P. Ettisserry, N. Goldsman, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 11
Mechanisms of Nitrogen Incorporation at 4H-SiC/SiO2 Interface during Nitric Oxide Passivation – A First Principles Study
2016 · Devanarayanan Ettisserry, Neil Goldsman, et al. · Materials science forum · 3
Using density functional theory to engineer direct gap germanium-tin alloy
2015 · Chris Darmody, D. P. Ettisserry, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 3
Modeling of oxygen-vacancy hole trap activation in 4H-SiC MOSFETs using density functional theory and rate equation analysis
2015 · D. P. Ettisserry, N. Goldsman, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 3
Density functional and Monte Carlo-based electron transport simulation in 4H-SiC(0001)/SiO2 DMOSFET transition region
2013 · S. Salemi, D. P. Ettisserry, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 3
Identification and quantification of 4H-SiC (0001)/SiO2 interface defects by combining density functional and device simulations
2013 · D. P. Ettisserry, S. Salemi, et al. · International Conference on Simulation of Semiconductor Processes and Devices · 1
Integrated Modeling of Reliability and Performance of 4h-silicon Carbide Power Mosfets Using Atomistic and Device Simulations
2015 · Perinthatta Ettisserry, Devanarayanan · University Libraries (University of Maryland)
Works count: 16
Citation count: 322
H-index: 10
I10-index: 10
Year
Topic
Type