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Author

Alejandro Schulman

Observed names: A Schulman, A. Schulman, Alejandro Raúl Schulman, Schulman, A., Schulman, Alejandro, Schulman, Alejandro Raúl
Observed institutions: Université Paris-Sud, Institut polytechnique de Grenoble, Centre National de la Recherche Scientifique, Consejo Nacional de Investigaciones Científicas y Técnicas, University of Turku, Universidad de Salamanca, Universidad de Buenos Aires, Laboratoire de physique des Solides, Laboratoire des Matériaux et du Génie Physique, International Iberian Nanotechnology Laboratory, Instituto de Física de Buenos Aires, Communauté Université Grenoble Alpes, National Institute of Advanced Industrial Science and Technology, Université Grenoble Alpes
ORCID: 0000-0002-8053-2626
Observed ORCID: 0000-0002-8053-2626
OpenAlex ID: A5050683112
Multilayer spintronic neural networks with radiofrequency connections
2023 · Andrew Ross, Nathan Leroux, et al. · Nature Nanotechnology · 75
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Poole-Frenkel effect and variable-range hopping conduction in metal/YBCO resistive switching devices
2015 · A. Schulman, L. F. Lanosa, et al. · Journal of Applied Physics · 31
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Electron Doping Effect in the Resistive Switching Properties of Al/Gd1–xCaxMnO3/Au Memristor Devices
2021 · Ville Lähteenlahti, Alejandro Schulman, et al. · ACS Applied Materials & Interfaces · 28
Structural, electrical and magnetic properties of epitaxial La0.7Sr0.3CoO3 thin films grown on SrTiO3 and LaAlO3 substrates
2014 · Z. Othmen, A. Schulman, et al. · Applied Surface Science · 25
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Transport properties of resistive switching in Ag/Pr0.6Ca0.4MnO3/Al thin film structures
2019 · V. Lähteenlahti, A. Schulman, et al. · Journal of Alloys and Compounds · 19
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Strain dependence of the physical properties of epitaxial La0.7Ca0.3MnO3 thin films grown on LaAlO3 substrates
2015 · S. El Helali, K. Daoudi, et al. · Journal of Alloys and Compounds · 17
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Anomalous time relaxation of the nonvolatile resistive state in bipolar resistive-switching oxide-based memories
2012 · A. Schulman, M. J. Rozenberg, et al. · Physical Review B · 17
The impact of local pinning sites in magnetic tunnel junctions with non-homogeneous free layers
2024 · Alex. S. Jenkins, Leandro Martins, et al. · Communications Materials · 14
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Appearance of glassy ferromagnetic behavior in Gd1-xCaxMnO3 ( 0⩽x⩽1 ) thin films: A revised phase diagram
2019 · A. Schulman, A. Beiranvand, et al. · Journal of Magnetism and Magnetic Materials · 14
Bipolar Resistive Switching in 2D MoSe 2 Grown by Atmospheric Pressure Chemical Vapor Deposition
2023 · João Fernandes, Justyna Grzonka, et al. · ACS Applied Materials & Interfaces · 12
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Tuned AFM–FM coupling by the formation of vacancy complex in Gd 0.6 Ca 0.4 MnO 3 thin film lattice
2021 · A Beiranvand, M O Liedke, et al. · Journal of Physics Condensed Matter · 12
Classification of multi-frequency RF signals by extreme learning, using magnetic tunnel junctions as neurons and synapses
2023 · Nathan Leroux, Danijela Marković, et al. · APL Machine Learning · 11
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Manganite memristive devices: recent progress and emerging opportunities
2024 · A Schulman, H Huhtinen, et al. · Journal of Physics D Applied Physics · 10
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Bioplausible Synaptic Behavior of Al/Gd0.3Ca0.7MnO3/Au Memristive Devices for Unsupervised Spiking Neural Networks
2023 · Teemu Hynnä, Alejandro Schulman, et al. · ACS Applied Electronic Materials · 9
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Exploring Multifunctionality in MgO‐Based Magnetic Tunnel Junctions with Coexisting Magnetoresistance and Memristive Properties
2023 · Alejandro Schulman, Elvira Paz, et al. · Advanced Functional Materials · 9
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Resistive switching effects on the spatial distribution of phases in metal–complex oxide interfaces
2011 · A. Schulman, C. Acha · Physica B Condensed Matter · 9
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Area-Dependent Resistive Switching and Interfacial Dynamics in GCMO-Based Memristors
2025 · Anni Antola, Johanna Laaksonen, et al. · ACS Applied Electronic Materials · 8
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Enhancing spin-transfer torque in magnetic tunnel junction devices: Exploring the influence of capping layer materials and thickness on device characteristics
2023 · Tahereh Sadat Parvini, Elvira Paz, et al. · Journal of Applied Physics · 8
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Cyclic electric field stress on bipolar resistive switching devices
2013 · A. Schulman, C. Acha · Journal of Applied Physics · 8
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Compact Modeling and SPICE Simulation of GCMO-Based Resistive Switching Devices
2022 · Enrique Miranda, Ville Lahteenlahti, et al. · IEEE Transactions on Nanotechnology · 7
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Temperature effect on a weighted vortex spin-torque nano-oscillator for neuromorphic computing
2024 · Ren Li, Yasser Rezaeiyan, et al. · Scientific Reports · 6
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Increased Curie temperature and magnetoresistive response by modifying Fe/Mo ratio in Sr 2 FeMoO 6 thin films
2022 · Naman A. Naushahi, I. Angervo, et al. · Journal of Magnetism and Magnetic Materials · 6
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The effect of substrate-induced defects on structural and resistive switching properties in Gd0.2Ca0.8MnO3 thin films
2024 · I. Angervo, A. Antola, et al. · AIP Advances · 5
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Structurally simplified GCMO crossbar design for artificial synaptic networks
2024 · Anni Antola, Ilari Angervo, et al. · Applied Physics Letters · 4
Metastable ferromagnetic flux closure-type domains in strain relaxed Gd 0.1 Ca 0.9 MnO 3 thin films
2020 · A Schulman, H Palonen, et al. · Journal of Physics Condensed Matter · 4
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Works count: 53
Citation count: 391
H-index: 11
I10-index: 13
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