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A. Talbi

Observed names: A Talbi, Abbasia Talbi, Abbassia TALBI, Abbassia Talbi, Abbassia Talbi ., Talbi Abbassia
ORCID: 0009-0000-4335-5723
Observed ORCID: 0009-0000-4335-5723
OpenAlex ID: A5054366033
Electrical characterization of Au/n-GaN Schottky diodes
2004 · B Akkal, Z Benamara, et al. · Materials Chemistry and Physics · 48
Electrical transport characteristics of Au/n-GaN Schottky diodes
2005 · Z. Benamara, B. Akkal, et al. · Materials Science and Engineering C · 18
Electrical parameters evolution of Au/InP(100) and Au/InSb/InP(100) systems with restructuring conditions
2002 · Z Benamara, B Akkal, et al. · Materials Science and Engineering C · 16
Nitridation of InP(100) substrates studied by XPS spectroscopy and electrical analysis
2006 · A. Talbi, Z. Benamara, et al. · Materials Science and Engineering A · 15
Study and improvement of interfacial properties in a MIS structure based on p-type InP
2003 · M. Chellali, S. Tizi, et al. · Vacuum · 10
Numerical Study of the Impact of Junction Depth and the Surface Recombination Velocity on Electrical Parameters of GaAs-Solar Cell
2019 · Abdelkader Baghdad Bey ., Abbassia Talbi ., et al. · International Journal of Advanced Science and Engineering · 6
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Electrical Characterization and Interface State Density in Au/n-InN/InP Schottky Diode
2021 · A. H. Khediri, A. Talbi, et al. · Journal of Nano- and Electronic Physics · 5
Electrical Study of Au/GaN/GaAs (100) Structures as a Function of Frequency
2022 · A. M. Benamara, A. H. Kacha, et al. · Journal of Nano- and Electronic Physics · 3
Impact of III-Nitride/Si Interface Preconditioning on Breakdown Voltage in GaN-on-Silicon HEMT
2021 · Abdelkrim Khediri, Abbasia Talbi, et al. · Micromachines · 3
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Effect of InSb buffer layer in MIS structures based on InP
2001 · S Tizi, Z Benamara, et al. · Vacuum · 3
Interface states effect on conduction mechanisms and barrier height homogeneities of Au/n-GaAs Schottky structures in a wide temperature range
2026 · Hayat TOUMI, Mekki Abdelkader BENAMARA, et al. · Revista Mexicana de Física · 1
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Optimization of the Electrical Characteristics of the Au/n-type InN/InP Schottky Diode Based on the Contact Technique of Different Diameters
2020 · A. Bey, A. Talbi, et al. · Journal of Nano- and Electronic Physics · 1
C-V and G-V Characteristics of Nitridated GaAs (100) Structures as Function of Frequency-Effect of Series Resistance
2025 · Benamara Mekki Abdelkader, Talbi Abbassia, et al. · The Eurasia Proceedings of Science Technology Engineering and Mathematics
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Study of the Effect of InP (100) Nitridation Time by XPS Analysis and Electrical Characterisation
2025 · Talbi Abbassia, Benamara Mekki Abdelkader, et al. · The Eurasia Proceedings of Science Technology Engineering and Mathematics
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Inn Formation Time and Heating Post-Nitridation Influence on the Inp(100) Surface
2025 · Mekki Abdelkader Benamara, Abbassia Talbi, et al. · SSRN Electronic Journal
Analysis of C-V Characteristics of InP(p)/InSb/Al2O3/Au MIS Structures in Wide Temperature Range
2013 · M.A. Benamara, A. Talbi, et al. · Advanced materials research
Works count: 16
Citation count: 129
H-index: 6
I10-index: 5
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