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Author

Masataka Hourai

Observed name: M. Hourai
ORCID: 0000-0001-9710-4057
Observed ORCID: 0000-0001-9710-4057
OpenAlex ID: A5055589813
Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon
1993 · Shinsuke Sadamitsu, Shigeru Umeno, et al. · Japanese Journal of Applied Physics · 137
A Method of Quantitative Contamination with Metallic Impurities of the Surface of a Silicon Wafer
1988 · Masataka Hourai, Toshio Naridomi, et al. · Japanese Journal of Applied Physics · 114
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Behavior of Defects Induced by Metallic Impurities on Si(100) Surfaces
1989 · Masataka Hourai, Katsumi Murakami, et al. · Japanese Journal of Applied Physics · 58
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Axial Microscopic Distribution of Grown-in Defects in Czochralski-Grown Silicon Crystals
1993 · Shigeru Umeno, Shinsuke Sadamitsu, et al. · Japanese Journal of Applied Physics · 38
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Growth Parameters Determining the Type of Grown-In Defects in Czockralski Silicon Crystals
1995 · M. Hourai, E. Kajita, et al. · Materials science forum · 32
Formation of Grown-in Defects during Czochralski Silicon Crystal Growth
1997 · Hideshi Nishikawa, Tadami Tanaka, et al. · Japanese Journal of Applied Physics · 31
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Structure, Energetics, and Thermal Stability of Nitrogen-Vacancy-Related Defects in Nitrogen Doped Silicon
2003 · A. Karoui, F. Sahtout Karoui, et al. · Journal of The Electrochemical Society · 30
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Formation Behavior of Infrared Light Scattering Defects in Silicon during Czochralski Crystal Growth
1995 · Masataka Hourai, Toru Nagashima, et al. · Journal of The Electrochemical Society · 30
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Defect Formation Behaviors in Heavily Doped Czochralski Silicon
2006 · Wataru Sugimura, Toshiaki Ono, et al. · ECS Transactions · 28
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Transmission Electron Microscopy Observation of Defects Induced by Fe Contamination on Si(100) Surface
1991 · Shinsuke Sadamitsu, Ayako Sasaki, et al. · Japanese Journal of Applied Physics · 24
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Relationship between Grown-in Defects in Czochralski Silicon Crystals
1997 · Shigeru Umeno, Masahiko Okui, et al. · Japanese Journal of Applied Physics · 22
Review and Comments for the Development of Point Defect‐Controlled CZ‐Si Crystals and Their Application to Future Power Devices
2018 · Masataka Hourai, Toru Nagashima, et al. · physica status solidi (a) · 21
Bifurcation structure of the Belousov-Zhabotinskii reaction in a stirred flow reactor
1985 · Masataka Hourai, Yashige Kotake, et al. · The Journal of Physical Chemistry · 20
Dependence of Grown-in Defect Behavior on Oxygen Concentration in Czochralski Silicon Crystals
1999 · Shigeru Umeno, Yoshio Yanase, et al. · Japanese Journal of Applied Physics · 18
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Influence of melt-temperature fluctuations on striation formation in large-scale Czochralski Si growth systems
1996 · Tadashi Kanda, Masataka Hourai, et al. · Journal of Crystal Growth · 17
Influence of Fe Contamination in Czochralski-Grown Silicon Single Crystals on LSI-Yield Related Crystal Quality Characteristics
1995 · Morimasa Miyazaki, Sumio Miyazaki, et al. · Japanese Journal of Applied Physics · 16
Oxygen concentration dependence of as-grown defect formation in nitrogen-doped Czochralski silicon single crystals
2021 · Kaoru Kajiwara, Kazuhisa Torigoe, et al. · Journal of Crystal Growth · 15
TEM Observation of Defects Induced by Ni Contamination on a Si(100) Surface
1989 · Shinsuke Sadamitsu, Masakazu Sano, et al. · Japanese Journal of Applied Physics · 15
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Oxygen Precipitation Properties of Nitrogen‐Doped Czochralski Silicon Single Crystals with Low Oxygen Concentration
2019 · Kaoru Kajiwara, Kazuhiro Harada, et al. · physica status solidi (a) · 13
Determination of the criteria for nucleation of ring-OSF from small as-grown oxygen precipitates in CZSi crystals
1996 · Kieran Marsden, Tadashi Kanda, et al. · Materials Science and Engineering B · 13
Characterization of complexities in Czochralski crystal growth by nonlinear forecasting
1994 · Takaya Miyano, Hiroshi Morita, et al. · Journal of Applied Physics · 13
Determination of Physical Properties for Point Defects during CZ Silicon Crystal Growth by High-Precision Thermal Simulations
2011 · Manabu Nishimoto, Kozo Nakamura, et al. · Journal of the Japan Institute of Metals and Materials · 11
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Effect of Heavy Boron Doping on Oxide Precipitate Growth in Czochralski Silicon
1999 · T. Ono, E. Asayama, et al. · Journal of The Electrochemical Society · 11
Characterization of Nucleation Sites in Nitrogen Doped Czochralski Silicon by Density Functional Theory and Molecular Mechanics
2003 · F. Sahtout Karoui, A. Karoui, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 9
Behavior of Defects in Heavily Boron Doped Czochralski Silicon
1997 · Toshiaki Ono, Eiichi Asayama, et al. · Japanese Journal of Applied Physics · 9
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Works count: 60
Citation count: 838
H-index: 16
I10-index: 23
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