Year: 1989
Type: article
Abstract: The behavior of Si(100) surface defects induced by intentional Ni contamination was studied by means of etch-pit observation and transmission electron microscopy. After annealing at 1150°C for 1 hour in N2 atmosphere, shallow pits (SP) were observed only on the surface of the wafer. These SP were thought to be attributable to NiSi2-type silicides formed on the surface by the selected area diffraction pattern. During the additionl thermal oxidation, oxidation-induced stacking faults (OSF) were always formed at each of the large SP but not always at small ones.
DOI: 10.1143/jjap.28.l333
Authors: Shinsuke Sadamitsu, Masakazu Sano, Masataka Hourai, Shigeo Sumita, Nobukatsu Fujino, Toshio Shiraiwa
Language: English
Field: Materials Science
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4243101403