Author

Shinsuke Sadamitsu

Observed names: S. Sadamitsu, サダミツ, シンスケ, 信介定光

Observed institution: The University of Osaka

OpenAlex ID: A5113547277

Dependence of the Grown-in Defect Distribution on Growth Rates in Czochralski Silicon

1993 · Shinsuke Sadamitsu, Shigeru Umeno, et al. · Japanese Journal of Applied Physics · 137

Degradation of Gate Oxide Integrity by Metal Impurities

1989 · Kazuo Hiramoto, Masakazu Sano, et al. · Japanese Journal of Applied Physics · 48

Axial Microscopic Distribution of Grown-in Defects in Czochralski-Grown Silicon Crystals

1993 · Shigeru Umeno, Shinsuke Sadamitsu, et al. · Japanese Journal of Applied Physics · 38

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Growth Parameters Determining the Type of Grown-In Defects in Czockralski Silicon Crystals

1995 · M. Hourai, E. Kajita, et al. · Materials science forum · 32

A Model for the Formation of Oxidation-Induced Stacking Faults in Czochralski Silicon

1995 · Shinsuke Sadamitsu, Masahiko Okui, et al. · Japanese Journal of Applied Physics · 25

Transmission Electron Microscopy Observation of Defects Induced by Fe Contamination on Si(100) Surface

1991 · Shinsuke Sadamitsu, Ayako Sasaki, et al. · Japanese Journal of Applied Physics · 24

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Internal Gettering for Ni Contamination in Czochralski Silicon Wafers

2000 · Koji Sueoka, Shinsuke Sadamitsu, et al. · Journal of The Electrochemical Society · 23

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Gettering Characteristics of Heavy Metal Impurities in Silicon Wafers with Polysilicon Back Seal and Internal Gettering

1997 · Satoshi Ogushi, Shinsuke Sadamitsu, et al. · Japanese Journal of Applied Physics · 22

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Analysis of Local Lattice Strains Around Plate-Like Oxygen Precipitates in Czochralski-Silicon Wafers by Convergent-Beam Electron Diffraction

1997 · Tetsuya Okuyama, Masaru Nakayama, et al. · Japanese Journal of Applied Physics · 22

TEM Observation of Defects Induced by Cu Contamination on Si(100) Surface

1988 · Shinsuke Sadamitsu, Shigeo Sumita, et al. · Japanese Journal of Applied Physics · 22

Effect of Heavy Carbon, Nitrogen and Boron Doping on Oxygen Precipitation Behavior in Silicon Epitaxial Wafers

2001 · Koji Sueoka, M. Akatsuka, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 17

Dependence of Gettering Efficiency on Metal Impurities

1989 · Morimasa Miyazaki, Masakazu Sano, et al. · Japanese Journal of Applied Physics · 17

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Generation of Oxidation-Induced Stacking Faults in Czochralski-Grown Silicon Crystals Exhibiting a Ring-like Distributed Stacking Fault Region

1995 · Kieran Marsden, Shinsuke Sadamitsu, et al. · Japanese Journal of Applied Physics · 16

TEM Observation of Defects Induced by Ni Contamination on a Si(100) Surface

1989 · Shinsuke Sadamitsu, Masakazu Sano, et al. · Japanese Journal of Applied Physics · 15

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Gettering in Advanced Low Temperature Processes

1997 · S. Sadamitsu, S. Ogushi, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 9

Observation of Ring‐OSF Nuclei in CZ‐Si Using Short‐Time Annealing and Infrared Light Scattering Tomography

1995 · Kieran Marsden, Shinsuke Sadamitsu, et al. · Journal of The Electrochemical Society · 8

High voltage electron microscope study of defects in silicon

1983 · R. Oshima, S. Sadamitsu, et al. · Physica B+C · 6

Oxygen Precipitation Behaviour and Internal Gettering in Epitaxial and Polished Czochralski Silicon Wafers

1999 · Koji Sueoka, M. Akatsuka, et al. · Diffusion and defect data, solid state data. Part B, Solid state phenomena/Solid state phenomena · 5

Effect of Oxide Precipitate Size on Slip Generation in Large Diameter Epitaxial Wafers

1998 · Masanori Akatsuka, Koji Sueoka, et al. · Japanese Journal of Applied Physics · 1

Intrinsic Gettering of Nickel and Copper for Advanced Low Temperature Device Processes

1998 · S. Ogushi, N. Reilly, et al. · MRS Proceedings · 1

Effect of oxide precipitates on the mechanical strength of large diameter epitaxial wafers

2002 · M. Akatsuka, K. Sueoka, et al. · IEEE International Symposium on Semiconductor Manufacturing conference proceedings

Identification of defects induced by heavy metal contamination on Si(100) surface using TEM

1990 · Shinsuke Sadamitsu, Ayako Sasaki, et al. · Proceedings annual meeting Electron Microscopy Society of America

TEM Observation of Defects Induced by Cu Contamination on Si(100) Surface : Condensed Matter

1988 · Shinsuke Sadamitsu, Shigeo Sumita, et al. · Japanese Journal of Applied Physics

7. 超高圧電子顕微鏡によるSiの格子欠陥の研究(修士論文アブストラクト(1982年))

1983 · 信介定光 · Kyoto University Research Information Repository (Kyoto University)

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Works count: 26

Citation count: 488

H-index: 14

I10-index: 14